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Documents

    Documents are markdown text files which describe project goals, capture details, or even simulation outputs.

    Assets

    IRG4PF50W

    IRG4PF50W

    defaultDefault
    TO-247-3_Vertical.png

    TO-247-3_Vertical.png

    TO-247-3_VerticalThumbnail

    RBN25H125S1FPQ

    RBN25H125S1FPQ thumbnail
    • Trench gate and thin wafer technology IGBT - 1250 V 25 A 223W • Built in fast recovery diode in one package • Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C) #Transistor #IGBT

    Properties

    Transistor

    Renesas

    RBN25H125S1FPQ

    renesas.com/us/en/document/dst/rbn25h125s1fpq-a0-datasheet-0?r=515401

    Q

    Pricing & Availability

    Distributor

    Qty 1

    Controls