Diodes

P-Channel 30 V 11A (Ta), 35A (Tc) 1W (Ta) Surface Mount PowerDI3333-8 (Type UX) P-channel enhancement mode MOSFET designed for power switching and power management applications. It features a −30 V drain-source voltage (VDS) rating, −11 A continuous drain current (TA = +25°C), a maximum RDS(ON) of 12 mΩ at VGS = −10 V (21 mΩ at −4.5 V), and is housed in a PowerDI3333-8 (Type UX) package with an ESD-protected gate. #PChannelMOSFET #EnhancementModeMOSFET #30V #11A #LowRDSOn #PowerManagement #PowerSwitching #DCDCConverter #PowerDI33338 #DiodesIncorporated

40 V N-Channel Enhancement-Mode Power MOSFET – N-channel enhancement-mode MOSFET optimized for DC-DC converters, power management circuits, LED backlighting, load switching, battery-powered equipment, and embedded power applications. Features a 40 V drain-to-source voltage (VDS), 6 A continuous drain current (TA), and 30 mΩ maximum RDS(on) at VGS = 10 V (54 mΩ at 4.5 V) for low conduction losses and efficient switching. Designed with low gate charge (18.6 nC typical), low input capacitance (945 pF typical), fast switching performance, and ±20 V gate-source voltage rating, making it suitable for high-efficiency switching regulators. Qualified to AEC-Q101 for automotive reliability, it operates over a −55°C to +150°C junction temperature range and is housed in a TO-252-3 (DPAK) surface-mount package. The part is Not Recommended for New Designs (NRND). #DiodesIncorporated #DMN4040SK313 #NChannelMOSFET #PowerMOSFET #40V #DPAK #DCDCConverter #PowerManagement #AECQ101 #AutomotiveElectronics #EmbeddedSystems

OR Controller N+1 ORing Controller N-Channel 1:1 24-VQFN (4x4) The LM74930-Q1 ideal diode controller drives and controls external back to back N-Channel MOSFETs to emulate an ideal diode rectifier and power path ON and OFF control with over current and overvoltage protection. The wide input supply of 4 V to 65 V allows protection and control of 12-V and 24-V automotive battery powered ECUs. The device can withstand and protect the loads from negative supply voltages down to –65 V. An integrated high side gate control (HGATE) drives the first MOSFET in the power path. The device allows load disconnect (ON and OFF control) in case of overcurrent, overvoltage and undervoltage event using HGATE control while ideal diode controller (DGATE) drives a second MOSFET to replace a Schottky diode for input reverse polarity protection and output voltage holdup by blocking the reverse current from output to input. The device has integrated current sense amplifier which provides with an adjustable overcurrent and short circuit protection with circuit breaker functionality. The device features an adjustable overvoltage and undervoltage protection feature to protect against supply transients. LM74930-Q1 features MODE pin which can be used to selectively enable or disable reverse current blocking functionality. Features • AEC-Q100 qualified for automotive applications – Device temperature grade 1: –40°C to +125°C ambient operating temperature range • 4-V to 65-V input range • Reverse input protection down to –65 V • Drives external back-to-back N-Channel MOSFETs in common source configuration • Ideal diode operation with 10.5-mV A to C forward voltage drop regulation • Low reverse detection threshold (–10.5 mV) with fast DGATE turn-off response (0.5 µs) • 18-mA peak gate (DGATE) turn on current • 2.6-A peak DGATE turn-off current • Adjustable overcurrent and short circuit protection • Analog current monitor output with 10% accuracy (IMON) • Adjustable overvoltage and undervoltage protection • Low 2.5-μA shutdown current (EN=Low) • MODE pin to allow bi-directional current flow (MODE=Low) • Meets automotive ISO7637 transient requirements with a suitable TVS diode • Available in space saving 24-pin VQFN package 2 Applications • 12-V / 24-V automotive reverse battery protection • Industrial transport • Redundant power supply ORing #IdealDiodeController #SurgeStopper #CircuitBreaker #PowerPathProtection #AutomotiveElectronics #AECQ100 #ReversePolarityProtection #OvercurrentProtection #TexasInstruments #PMIC

DIODE SCHOTTKY 60V SMB The TSS56LB is a 5 A surface-mount Schottky Barrier Rectifier designed for high-efficiency power rectification in switching power supplies, DC-DC converters, freewheeling circuits, and reverse polarity protection. It features a 60 V reverse voltage rating, low forward voltage drop, and fast switching characteristics, making it ideal for reducing power loss and improving overall system efficiency. The device is supplied in a compact DO-214AA (SMB) surface-mount package for automated PCB assembly. Key Features 60 V maximum repetitive reverse voltage (VRRM) 5 A average forward rectified current Low forward voltage drop (typically 0.52 V @ 5 A) High surge current capability (125 A peak) Low reverse leakage current Fast switching Schottky technology Surface-mount DO-214AA (SMB) package RoHS-compliant and lead-free construction Suitable for switching power supplies, DC-DC converters, polarity protection, and freewheeling applications #TSS56LB #SchottkyRectifier #SchottkyDiode #Rectifier #PowerElectronics #SMBPackage #SurfaceMount #LowForwardVoltage #HighEfficiency #PowerSupply #DCDCConverter #ReversePolarityProtection #ElectronicsComponents #commonpartslibrary #diode #schottky #Rectifier #Single-Diode #MBRS130