SOT-23-3_1P4X3P040_ONS 12v npn transistor

Welcome to your new project. Imagine what you can build here.

Bipolar (BJT) Transistor NPN 60 V 300MHz 200 mW Surface Mount SOT-23 #simplifiedFootprint

Bipolar (BJT) Transistor NPN 25V 500 mA 150MHz 300 mW Surface Mount SOT-23 #commonpartslibrary #transistor #bjt

N-Channel 30 V 5.7A (Ta) 1.4W (Ta) Surface Mount SOT-23-3 The AO3400A N-Channel MOSFET is a 30V N-channel enhancement-mode MOSFET designed using trench MOSFET technology. It is widely used for load switching, DC-DC converters, motor driving, and PWM control applications due to its very low on-resistance and compact SOT-23 package. It is especially popular in small electronics and embedded systems because it can be driven directly by 3.3V or 5V logic signals, making it ideal for microcontroller-based designs. Key Features Drain-Source Voltage (VDS): 30V Continuous Drain Current (ID): up to 5.7A (at 25°C) Ultra-low RDS(on): ~26.5 mΩ @ VGS = 10V ~32 mΩ @ VGS = 4.5V ~48 mΩ @ VGS = 2.5V Logic-level gate drive (works well with MCU GPIOs) Fast switching performance (ns-range switching times) Low gate charge (~6–7 nC) → efficient switching Compact SOT-23 package for space-saving PCB design Low power dissipation (~1.4W typical at 25°C ambient) Operating temperature: −55°C to +150°C Typical Applications Load switching (LEDs, sensors, small motors) Power management in battery-powered devices DC-DC converters PWM control circuits Fan and heater control in embedded systems #AO3400A #MOSFET #NChannelMOSFET #PowerElectronics #SOT23 #LoadSwitch #EmbeddedSystems #ElectronicsComponents #TrenchMOSFET #Commonpartslibrary #Transistor #FET

N-Channel 55V 47A (Tc) 3.8W (Ta), 110W (Tc) Through Hole TO-220AB #CommonPartsLibrary #Transistor #FET #Mosfet #IRLZ44 #HEXFET

Bipolar (BJT) Transistor NPN 40V 200 mA 300MHz 300 mW Surface Mount SOT-23-3 (TO-236) The MMBT3904LT1G is a general-purpose NPN bipolar junction transistor designed for switching and amplification applications. It is housed in a compact SOT-23 surface-mount package, making it suitable for high-density PCB designs. This transistor is widely used in low-power signal processing, digital switching, and analog amplification circuits due to its reliable performance and fast switching characteristics. Key Features General-purpose NPN transistor Compact SOT-23 surface-mount package Fast switching speed Low saturation voltage Suitable for low-current and low-power applications High reliability and stability Pb-free, Halogen-free, and RoHS compliant Electrical Characteristics (Typical @ 25°C unless otherwise specified) Collector-Emitter Voltage (VCEO): 40 V Collector-Base Voltage (VCBO): 60 V Emitter-Base Voltage (VEBO): 6 V Collector Current (IC): 200 mA (max) DC Current Gain (hFE): 100 – 300 Collector-Emitter Saturation Voltage (VCE(sat)): 0.2 V (typ) Transition Frequency (fT): ~300 MHz Absolute Maximum Ratings Collector Current (Continuous): 200 mA Power Dissipation: ~225 mW Junction Temperature: +150°C (max) Operating Temperature Range: -55°C to +150°C Storage Temperature Range: -55°C to +150°C Mechanical Characteristics Package Type: SOT-23 (TO-236AB) Mounting Type: Surface Mount Number of Pins: 3 Marking Code: Dependent on lot/manufacturer marking Applications General-purpose switching circuits Signal amplification Digital logic interfacing LED drivers and small load switching Audio and RF signal processing #CommonPartsLibrary #TransistorBJT #MMBT2222

Bipolar (BJT) Transistor NPN 300MHz Through Hole TO-92_Inline #CommonPartsLibrary #TransistorBJT

30V 4.2A 65mΩ@10V,3A 1W 1.5V@250uA P Channel SOT-23 MOSFETs ROHS #CommonPartsLibrary #Transistor #P-channel #Mosfet

N-Channel 50 V 220mA (Ta) 360mW (Ta) Surface Mount SOT-23-3 #CommonPartsLibrary #Transistor #N-channel #Mosfet

Optoisolator Transistor Output 5000Vrms 1 Channel 4-SMD #commonpartslibrary #isolator #optoisolator #transistor

555 Type, Timer/Oscillator (Single) IC 100kHz 8-PDIP NE555 DIP-8 through hole The NE555P is a classic and widely used precision timer IC manufactured by companies like Texas Instruments and others. It belongs to the popular 555 timer family and is designed for generating accurate time delays, oscillations, and pulse signals. The “P” variant refers to the PDIP (Plastic Dual In-line Package), making it ideal for through-hole mounting, breadboarding, and prototyping. NE555P PDIP-8 timer Internally, the NE555P consists of: Two comparators A flip-flop A discharge transistor A voltage divider network These blocks allow flexible configuration for timing and waveform generation. Key Features Timing & Operation Modes Monostable mode (one-shot pulse generation) Astable mode (continuous oscillator) Bistable mode (flip-flop operation) Electrical Characteristics Supply voltage range: 4.5V to 16V Output can source or sink up to 200 mA Adjustable duty cycle Performance High timing accuracy and stability Timing range from microseconds to hours (depends on external R and C) Temperature-stable operation Package & Usability 8-pin DIP (through-hole) package Easy to use for: Breadboards DIY electronics Educational projects Common Applications LED flashers and blinkers Pulse generation Time delay circuits PWM control (e.g., dimming LEDs, motor speed control) Tone/sound generation #Timer #commonpartslibrary

N-Channel 55V 49A (Tc) 94W (Tc) Through Hole TO-220AB #commonpartslibrary #transistor #tht

N-Channel 60V 500mA (Ta) 500mW (Ta) Surface Mount SOT-23 #CommonPartsLibrary #Transistor #FET #Mosfet #2N7002

Bipolar (BJT) Transistor NPN 45V 100 mA 300MHz 500 mW Through Hole TO-92-3 #commonpartslibrary #transistor #bjt

Bipolar (BJT) Transistor NPN 40V 200 mA 300MHz 625 mW Through Hole TO-92-3 The 2N3904TFR is a general-purpose NPN bipolar junction transistor (BJT) designed for low-power amplification and switching applications. It is widely used in signal processing, small-signal amplification, and digital switching circuits. This transistor offers fast switching speed, low saturation voltage, and reliable performance in a compact surface-mount package, making it suitable for consumer electronics, industrial controls, and embedded systems. Manufacturer Various (commonly ON Semiconductor / onsemi, Diodes Inc., Central Semiconductor) Part Number 2N3904TFR Transistor Type NPN Bipolar Junction Transistor (BJT) Configuration Single Package / Case SOT-23 (TO-236AB) Mounting Style Surface Mount (SMD/SMT) Collector-Emitter Voltage (VCEO) 40 V Collector-Base Voltage (VCBO) 60 V Emitter-Base Voltage (VEBO) 6 V Collector Current (IC) 200 mA (max) Power Dissipation (PD) ~200 mW to 350 mW (package dependent) DC Current Gain (hFE) 100 to 300 (typical, varies with operating conditions) Transition Frequency (fT) ~300 MHz Collector-Emitter Saturation Voltage (VCE(sat)) ~0.2 V (typical at IC = 10 mA, IB = 1 mA) Operating Temperature Range -55°C to +150°C Polarity NPN Packaging Tape & Reel (TFR suffix) RoHS Compliance Compliant #commonpartslibrary #transistor #bjt

80V 5000V -30℃~+100℃ 4us@2mA,100Ω 50mA 3us@2mA,100Ω 0.1V@1mA,20mA 1 6V 1.2V 光电三极管 DC SOP-4 Optocouplers - Phototransistor Output ROHS #CommonPartsLibrary #Isolator #Optoisolator #transistor #Photovoltaic #SMD

Optoisolator Transistor Output 3750Vrms 1 Channel 4-Mini-Flat #commonpartslibrary #PhotovoltaicOutputOptoisolators

N-Channel 30 V 5A (Ta) 1.3W (Ta) Surface Mount Micro3™/SOT-23 #CommonPartsLibrary #Transistor #FET #Mosfet #IRLML6344

Bipolar (BJT) Transistor Array 8 NPN Darlington 50V 500mA 2.25W Through Hole 18-DIP #commonpartslibrary #transistor #bjt

N-Channel 55V 110A (Tc) 200W (Tc) Through Hole TO-220AB #CommonPartsLibrary #Transistor #FET

N-Channel 60V 300mA (Ta) 830mW (Ta) Surface Mount TO-236AB #commonpartslibrary #transistor #nchannel #singlefet #mosfet