SOT-23-3_1P4X3P040_ONS 12v npn transistor

Bipolar (BJT) Transistor NPN 300MHz Through Hole TO-92_Inline #CommonPartsLibrary #TransistorBJT

Bipolar (BJT) Transistor NPN 45V 100 mA 300MHz 500 mW Through Hole TO-92-3 #commonpartslibrary #transistor #bjt

Bipolar (BJT) Transistor NPN 80V 6A 3MHz 2W Through Hole TO-220 #CommonPartsLibrary #Transistors #BJT #NPN #SingleBipolarTransistors

Bipolar (BJT) Transistor NPN 45 V 800 mA 100MHz 625 mW Through Hole TO-92-3 #commonpartslibrary #transistor #bjt

Bipolar Transistors BJT 45V 250mW 500mA NPN SOT-23(SOT-23-3)

Bipolar (BJT) Transistor NPN 60V 1 A 3MHz 2 W Through Hole TO-220 #CommonPartsLibrary #Transistors #BJT #NPN #SingleBipolarTransistors

Bipolar (BJT) Transistor NPN 60 V 1.5 A 1.25 W Through Hole TO-126 #CommonPartsLibrary #Transistors #Bipolar(BJT) #NPN #SingleBipolarTransistors

Bipolar (BJT) Transistor NPN 40 V 200 mA 300MHz 1.5 W Surface Mount SOT-223 #CommonPartsLibrary #TransistorBJT

Bipolar (BJT) Transistor NPN 60 V 15 A 2.5MHz 90 W Through Hole TO-247-3 #CommonPartsLibrary #Transistors #Bipolar(BJT) #NPN #SingleBipolarTransistors

Bipolar (BJT) Transistor NPN - Darlington 60V 5 A 2 W Through Hole TO-220 #commonpartslibrary #transistor #bjt

Bipolar (BJT) Transistor NPN 40V 200 mA 300MHz 300 mW Surface Mount SOT-23-3 (TO-236) The MMBT3904LT1G is a general-purpose NPN bipolar junction transistor designed for switching and amplification applications. It is housed in a compact SOT-23 surface-mount package, making it suitable for high-density PCB designs. This transistor is widely used in low-power signal processing, digital switching, and analog amplification circuits due to its reliable performance and fast switching characteristics. Key Features General-purpose NPN transistor Compact SOT-23 surface-mount package Fast switching speed Low saturation voltage Suitable for low-current and low-power applications High reliability and stability Pb-free, Halogen-free, and RoHS compliant Electrical Characteristics (Typical @ 25°C unless otherwise specified) Collector-Emitter Voltage (VCEO): 40 V Collector-Base Voltage (VCBO): 60 V Emitter-Base Voltage (VEBO): 6 V Collector Current (IC): 200 mA (max) DC Current Gain (hFE): 100 – 300 Collector-Emitter Saturation Voltage (VCE(sat)): 0.2 V (typ) Transition Frequency (fT): ~300 MHz Absolute Maximum Ratings Collector Current (Continuous): 200 mA Power Dissipation: ~225 mW Junction Temperature: +150°C (max) Operating Temperature Range: -55°C to +150°C Storage Temperature Range: -55°C to +150°C Mechanical Characteristics Package Type: SOT-23 (TO-236AB) Mounting Type: Surface Mount Number of Pins: 3 Marking Code: Dependent on lot/manufacturer marking Applications General-purpose switching circuits Signal amplification Digital logic interfacing LED drivers and small load switching Audio and RF signal processing #CommonPartsLibrary #TransistorBJT #MMBT2222

Bipolar (BJT) Transistor NPN 45 V 500 mA 100MHz 200 mW Surface Mount SOT-323 #CommonPartsLibrary #TransistorBJT #BC817

KPS-3227SP1C is a NPN silicon phototransistor #commonpartslibrary #sensor #Opticalsensor