802.15.4, Bluetooth, WiFi Bluetooth v5.0, Zigbee Transceiver Module 2.4GHz PCB Trace Surface Mount The ESP32-C6-WROOM-1-N8 integrates a 32-bit RISC-V single-core processor running up to 160 MHz, along with 8 MB of embedded SPI flash memory. It supports multiple wireless communication protocols, including: Wi-Fi 6 (802.11ax) in the 2.4 GHz band for improved efficiency and lower latency Bluetooth Low Energy (BLE 5) for short-range communication IEEE 802.15.4 for protocols such as Thread and Zigbee The module features a built-in PCB antenna, RF circuitry, crystal oscillator, and passive components, making it a complete solution that simplifies hardware design. It provides a wide range of GPIO pins and peripheral interfaces such as UART, SPI, I2C, PWM, ADC, and more, enabling flexible integration with sensors and external devices. Designed for low power consumption, it includes multiple power-saving modes, making it suitable for battery-powered applications. Typical Applications Smart home and IoT devices Wireless sensors and control systems Industrial automation Smart lighting and energy management Matter-compatible devices (via Thread support)

Diode 40 V 3A Surface Mount SMB Schottky diode 3A 40V SMB The B340B-13-F is a surface-mount Schottky barrier rectifier diode designed for efficient power rectification in low-voltage, high-frequency applications. It features low forward voltage drop and fast switching capability, making it suitable for DC-DC converters, power supplies, reverse polarity protection, and freewheeling diode applications. The device is housed in a compact SMB (DO-214AA) package, enabling high current handling in space-constrained designs. ELECTRICAL CHARACTERISTICS Reverse Voltage (VRRM): 40 V Average Forward Current (IF(AV)): 3 A Forward Voltage (VF): 0.5 V (typical at IF = 3 A) Reverse Leakage Current (IR): 0.5 mA (max at VR = 40 V, 25°C) Peak Surge Current (IFSM): 80 A (8.3 ms single half sine wave) THERMAL CHARACTERISTICS Operating Junction Temperature Range: -55°C to +150°C Storage Temperature Range: -55°C to +150°C Thermal Resistance Junction-to-Ambient (RθJA): ~75 °C/W MECHANICAL CHARACTERISTICS Package Type: SMB (DO-214AA) Mounting Type: Surface Mount (SMD) Polarity: Cathode marked by band Weight: ~0.1 g FEATURES Low forward voltage drop for improved efficiency High surge current capability Fast switching speed Low power loss and high reliability Compact SMB package for space-saving PCB layout RoHS compliant and halogen-free APPLICATIONS Switch-mode power supplies (SMPS) DC-DC converters Reverse polarity protection circuits Freewheeling and clamping diodes Battery charging circuits MANUFACTURER / PART DETAILS Manufacturer: Diodes Incorporated Part Number: B340B-13-F Package Code: SMB (DO-214AA) #Diode #Rectifier #Single-Diode #SCHOTTKY #B340

Bluetooth, WiFi 802.11b/g/n/ax, Bluetooth v5.4 Transceiver Module 2.4GHz Integrated, Chip Surface Mount Silicon Labs SiWG917 module is our lowest power Wi-Fi 6 plus Bluetooth LE 5.4, ideal for ultra-low power IoT wireless devices using Wi-Fi®, Bluetooth, Matter, and IP networking for secure cloud connectivity. It is optimal for developing battery operated devices that need long battery life. SiWG917 module includes an ultra-low power Wi-Fi 6 plus Bluetooth Low Energy (LE) 5.4 wireless CPU subsystem, and an integrated micro-controller (MCU) application subsystem, security, peripherals and power management subsystem all in a single 16 x 21.1 x 2.3 mm package. The wireless subsystem consists of a multi-threaded Network Wireless Processor (NWP) running up to 160 MHz, baseband digital signal processing, analog front end, 2.4 GHz RF transceiver and integrated power amplifier. The application subsystem consists of an ARM® Cortex®-M4 running up to 180 MHz, embedded SRAM, flash, ultra-low power sensor hub, and matrix vector processor. The ARM® Cortex®-M4 is dedicated for peripheral and application-related processing, while the NWP runs the wireless and networking stacks on independent threads, thus providing a fully integrated solution that is ready for a wide range of embedded wireless IoT applications. The modules come with modular radio type approvals for various countries, including USA (FCC), Canada (IC/ISED) and Japan (MIC), and are in compliance with the relevant EN standards (including EN 300 328 v2.2.2) for the conformity with the directives and regulations in EU and UK. KEY FEATURES • Wi-Fi 6 Single Band 2.4 GHz 20 MHz 1x1 stream IEEE 802.11 b/g/n/ax • Bluetooth LE 5.4 • Single chip Matter Over Wi-Fi Solution • ARM® Cortex® M4 Processor with FPU subsystem up to 180 MHz with rich set of Digital and Analog Peripherals. • Wi-Fi 6 Benefits: TWT for improved efficiency and longer battery life, MUMIMO/OFDMA for Higher Throughput, network capacity and low latency • Best in Class Device and Wireless Security • WLAN Tx power up to +17.5 dBm with integrated PA • Bluetooth LE Tx power up to +17 dBm with integrated PA • WLAN Rx sensitivity as low as -95.5 dBm • Wi-Fi 4 Standby Associated mode current: 71 μA @ 1-second listen interval • Embedded Flash option up to 8 MB/ optional external Flash up to 16 MB • Embedded PSRAM option up to 2 MB/ optional external PSRAM option up to 16 MB • Ultra-low power sensor hub peripherals • Matrix Vector Processor (MVP) • Embedded Wi-Fi, Bluetooth LE, Matter, and networking stacks supporting wireless coexistence • Three software-configurable MCU application memory options for sharing the RAM between the wireless, system, and application (192/256/320 KB) • Operating temperature: -40 to +85 ºC • Operating supply range: 3.0 to 3.63 V • Supply voltage for GPIOs: 1.71 to 3.63 V #WiFi6 #BluetoothLE54 #IoTModule #WirelessSoC #SiliconLabs #EmbeddedSystems #SmartHome #IndustrialIoT #LowPowerDesign #RFModule #ConnectedDevices #EdgeComputing #MatterReady #PCBDesign #ElectronicsEngineering

Diode Array 1 Pair Common Cathode 200 V 15A Through Hole TO-220-3 The V30202C-M3/4W is a surface-mount Schottky barrier rectifier designed for high-efficiency power conversion and fast switching applications. It features a low forward voltage drop and high surge current capability, making it suitable for switching power supplies, DC-DC converters, freewheeling diodes, and polarity protection circuits. The device is housed in a compact DO-214AB (SMC) package, enabling high power density and reliable thermal performance in space-constrained designs. Key Features Schottky barrier technology for fast switching Low forward voltage drop for improved efficiency High forward current capability Low power loss and high reliability High surge current capability Surface-mount DO-214AB (SMC) package RoHS compliant and halogen-free Absolute Maximum Ratings Repetitive peak reverse voltage: 200 V Average forward rectified current: 30 A Non-repetitive peak surge current: 300 A Operating junction temperature range: -55°C to +150°C Storage temperature range: -55°C to +150°C Electrical Characteristics Forward voltage drop: approximately 0.85 V at rated current Reverse leakage current: low, typically in the mA range at rated voltage Reverse recovery time: negligible (Schottky device) Thermal resistance junction-to-case: low for efficient heat dissipation Mechanical Characteristics Package type: DO-214AB (SMC) Mounting type: Surface mount Polarity: Cathode band marking Terminal finish: Solderable, compatible with reflow processes Applications Switching power supplies DC-DC converters Freewheeling and clamping diodes Reverse polarity protection Battery-powered systems Automotive and industrial power circuits Pin Configuration Anode: Connected to the device substrate Cathode: Marked terminal (banded side) #CommonPartLibrary #Diode #Rectifier #DiodeArray