-19A Id, -60V Vds, TrenchFET P-Channel Power MOSFET, 60mOhm Ron, 40nC Qg, -55 to 150 °C, TO-252-2 TrenchFET P-Channel Power MOSFET TO?252*

602A Id, 60V Vds, N-Channel TrenchFET MOSFET, 0.85mOhm Ron, 42nC Qqd, -55 to 175 °C, LFPAK88 Power MOSFET N-MOS Automotive AEC-Q101 PowerPAK 8x8L LFPAK88*

N-Channel 30 V 47.1A (Ta), 162A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8SH 30 V N-channel TrenchFET® Gen V MOSFET that combines very low on-resistance (RDS(on)), high current capability, and a thermally efficient compact package. It is optimized for applications where high efficiency, low power loss, and small PCB footprint are critical. This device is built using advanced trench MOSFET technology, enabling low conduction and switching losses, which improves overall system efficiency in power electronics designs. N-channel MOSFET (enhancement mode) Low RDS(on): ~1.2 mΩ @ 10 V → minimizes conduction losses High current capability: 47.1 A (ambient) up to 162 A (case) 30 V drain-source voltage (VDS) Low gate charge (Qg) → fast switching performance Wide operating temperature: −55 °C to +150 °C Compact PowerPAK® 1212-8 package for high power density #CommonPartsLibrary #Transistor #FET #Mosfet #SISS52