N-Channel 1200 V 95A (Tc) 427W Through Hole TO-247N Silicon Carbide (SiC) N-channel Power MOSFET for high-efficiency power switching applications, featuring a 1200 V drain-to-source voltage rating, 71 A continuous drain current, and 22 mΩ typical on-resistance (R_DS(on)). Housed in a TO-247N package, it is designed for high-speed switching and low switching losses. #SiCMOSFET #NChannelMOSFET #PowerMOSFET #1200V #71A #22mOhm #TO247N #PowerSwitching #RohmSemiconductor #SCT3022KLHRC11

N-Channel 650V 93A (Tc) 339W (Tc) Through Hole TO-247N Silicon Carbide (SiC) N-Channel Power MOSFET for high-efficiency power switching applications, featuring a 650 V drain-to-source voltage, 77 A continuous drain current (Tc = 25°C), and 22 mΩ typical RDS(on). Housed in a TO-247N package, it is suitable for high-speed switching and high-voltage power conversion circuits. #SiC_MOSFET #N_Channel #650V #77A #22mOhm #TO247N #PowerSwitching #Rohm