3.3v 5v Logic Level Converter

3.3v 5v Logic Level Converter

N-Channel 30 V 5.7A (Ta) 1.4W (Ta) Surface Mount SOT-23-3 The AO3400A N-Channel MOSFET is a 30V N-channel enhancement-mode MOSFET designed using trench MOSFET technology. It is widely used for load switching, DC-DC converters, motor driving, and PWM control applications due to its very low on-resistance and compact SOT-23 package. It is especially popular in small electronics and embedded systems because it can be driven directly by 3.3V or 5V logic signals, making it ideal for microcontroller-based designs. Key Features Drain-Source Voltage (VDS): 30V Continuous Drain Current (ID): up to 5.7A (at 25°C) Ultra-low RDS(on): ~26.5 mΩ @ VGS = 10V ~32 mΩ @ VGS = 4.5V ~48 mΩ @ VGS = 2.5V Logic-level gate drive (works well with MCU GPIOs) Fast switching performance (ns-range switching times) Low gate charge (~6–7 nC) → efficient switching Compact SOT-23 package for space-saving PCB design Low power dissipation (~1.4W typical at 25°C ambient) Operating temperature: −55°C to +150°C Typical Applications Load switching (LEDs, sensors, small motors) Power management in battery-powered devices DC-DC converters PWM control circuits Fan and heater control in embedded systems #AO3400A #MOSFET #NChannelMOSFET #PowerElectronics #SOT23 #LoadSwitch #EmbeddedSystems #ElectronicsComponents #TrenchMOSFET #Commonpartslibrary #Transistor #FET

The NE555 devices are precision timing circuits capable of producing accurate time delays or oscillation. In time-delay or monostable operating modes, the timed interval is controlled by a single external resistor and capacitor network. In the astable mode of operation, the frequency and duty cycle are controlled independently with two external resistors and a single external capacitor. Each timer has a trigger level equal to approximately one-third of the supply voltage and a threshold level equal to approximately two-thirds of the supply voltage. These levels can be altered by use of the control voltage pin (CONT). When the trigger input (TRIG) is less than the trigger level, the flip-flop is set and the output goes high. If TRIG is greater than the trigger level and the threshold input (THRES) is greater than the threshold level, the flip-flop is reset and the output is low. The reset input (RESET) overrides all other inputs and is used to initiate a new timing cycle. If RESET is low, the flip-flop is reset and the output is low. Whenever the output is low, a lowimpedance path is provided between the discharge pin (DISCH) and the ground pin (GND). Tie all unused inputs to an appropriate logic level to prevent false triggering. The output circuit is capable of sinking or sourcing current up to 200mA. Operation is specified for supplies of 5V to 15V. With a 5V supply, output levels are compatible with TTL inputs. Features - Timing from microseconds to hours - Astable or monostable operation - Adjustable duty cycle - TTL-compatible output can sink or source up to 200mA - On products compliant to MIL-PRF-38535, all parameters are tested unless otherwise noted. Applications - Pulse-shaping circuits - Missing-pulse detectors - Pulse-width modulators - Pulse-position modulators - Sequential timers - Pulse generators -F requency dividers - Industrial controls

Bipolar (BJT) Transistor NPN 40V 200 mA 300MHz 300 mW Surface Mount SOT-23-3 (TO-236) The MMBT3904LT1G is a general-purpose NPN bipolar junction transistor designed for switching and amplification applications. It is housed in a compact SOT-23 surface-mount package, making it suitable for high-density PCB designs. This transistor is widely used in low-power signal processing, digital switching, and analog amplification circuits due to its reliable performance and fast switching characteristics. Key Features General-purpose NPN transistor Compact SOT-23 surface-mount package Fast switching speed Low saturation voltage Suitable for low-current and low-power applications High reliability and stability Pb-free, Halogen-free, and RoHS compliant Electrical Characteristics (Typical @ 25°C unless otherwise specified) Collector-Emitter Voltage (VCEO): 40 V Collector-Base Voltage (VCBO): 60 V Emitter-Base Voltage (VEBO): 6 V Collector Current (IC): 200 mA (max) DC Current Gain (hFE): 100 – 300 Collector-Emitter Saturation Voltage (VCE(sat)): 0.2 V (typ) Transition Frequency (fT): ~300 MHz Absolute Maximum Ratings Collector Current (Continuous): 200 mA Power Dissipation: ~225 mW Junction Temperature: +150°C (max) Operating Temperature Range: -55°C to +150°C Storage Temperature Range: -55°C to +150°C Mechanical Characteristics Package Type: SOT-23 (TO-236AB) Mounting Type: Surface Mount Number of Pins: 3 Marking Code: Dependent on lot/manufacturer marking Applications General-purpose switching circuits Signal amplification Digital logic interfacing LED drivers and small load switching Audio and RF signal processing #CommonPartsLibrary #TransistorBJT #MMBT2222

Voltage Level Translator Bidirectional 1 Circuit 8 Channel 100Mbps 20-TSSOP #CommonPartsLibrary #IntegratedCircuit #Logic #Translator #Level-Shifter #TXB0108

Voltage Level Translator Bidirectional 1 Circuit 8 Channel 60Mbps 20-TSSOP This device is an 8-bit non-inverting level translator which uses two separate configurable power-supply rails. The A port tracks the VCCA pin supply voltage. The VCCA pin accepts any supply voltage between 1.4V and 3.6V. The B port tracks the VCCB pin supply voltage. The VCCB pin accepts any supply voltage between 1.65V and 5.5V. Two input supply pins allows for low Voltage bidirectional translation between any of the 1.5V, 1.8V, 2.5V, 3.3V, and 5V voltage nodes. When the output-enable (OE) input is low, all outputs are placed in the high-impedance (Hi-Z) state. To put the device in the Hi-Z state during power-up or power-down periods, tie OE to GND through a pulldown resistor. The current-sourcing capability of the driver determines the minimum value of the resistor. • No direction-control signal needed • Maximum data rates: – 110Mbps (push pull) – 1.2Mbps (open drain) • 1.4V to 3.6V on A port and 1.65V to 5.5V on B port (VCCA ≤ VCCB) • No power-supply sequencing required – either VCCA or VCCB can be ramped first • Latch-up performance exceeds 100mA per JESD 78, class II • ESD protection exceeds JESD 22 (A port): – 2000 V Human Body Model (A114-B) – 150 V Machine Model (A115-A) – 1000 V Charged-Device Model (C101) • IEC 61000-4-2 ESD (B-port): – ± 8kV Contact Discharge – ± 6kV Air Discharge #commonpartslibrary #integratedcircuit #logic #translator #levelshifter