N-Channel 650 V 29A (Tc) 96W (Tc) Through Hole TO-220AB 650 V GaN FET for high-efficiency power switching applications. Rated for 650 V drain-to-source voltage (VDS) with 70 mΩ typical RDS(on), it supports 41 A continuous drain current (TC = 25°C). The device features a normally-off (enhancement-mode) GaN HEMT, ±20 V gate-source voltage rating, and is housed in a TO-220 package (4-lead, Kelvin source) for improved gate drive performance. #GaNFET #EnhancementMode #650V #70mOhm #41A #PowerTransistor #TO220 #KelvinSource #Renesas #PowerElectronics

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