Silicon Carbide (SiC) N-Channel Power MOSFET for high-efficiency power switching applications, featuring a 650 V drain-to-source voltage, 60 mΩ maximum on-resistance (RDS(on)), and 29 A continuous drain current at 25°C. Based on 3rd Generation SiC MOSFET technology, it provides high-speed switching with low capacitances and a fast intrinsic diode with low reverse recovery (Qrr). Supplied in a TO-247-3 through-hole package with a maximum operating junction temperature of +175°C. #SiCMOSFET #PowerMOSFET #NChannel #650V #29A #60mOhm #TO247 #HighSpeedSwitching #LowCapacitance #FastRecovery #Wolfspeed

3.3mH @ 10 kHz 2 Line Common Mode Choke Through Hole 2.5A DCR 60mOhm #CommonPartsLibrary #Filter #Inductor #THT

1000 µF 25 V Aluminum Electrolytic Capacitors Radial, Can - SMD 60mOhm @ 100kHz 2000 Hrs @ 105°C #commonpartslibrary #polarize-capacitor

6.8 µH Shielded Wirewound Inductor 4.5 A 60mOhm Max Nonstandard #commonpartslibrary #inductor

470 µF 35 V Aluminum Electrolytic Capacitors Radial, Can - SMD 60mOhm @ 100kHz 5000 Hrs @ 105°C

2.7 nH Unshielded Wirewound Inductor 720 mA 60mOhm Max 0201 (0603 Metric) #CommonPartsLibrary #Inductor #FixedInductor #LQW03AW

47 µH Shielded Drum Core, Wirewound Inductor 3.8 A 60mOhm Max Nonstandard #commonpartslibrary #inductor #coil

-19A Id, -60V Vds, TrenchFET P-Channel Power MOSFET, 60mOhm Ron, 40nC Qg, -55 to 150 °C, TO-252-2 TrenchFET P-Channel Power MOSFET TO?252*

10µH Unshielded Drum Core, Wirewound Inductor 1.8A 60mOhm Max Nonstandard #CommonPartsLibrary #Inductor #SMD #Fixed-Inductor