FRAM, or Ferroelectric Ram, is the coolest new data storage method that all the fashion magazines are talking about. Oh wait, no that's quilted handbags. But FRAM is pretty damn cool too! It's similar to Dynamic random-access memory, only with a ferroelectric layer instead of a dielectric layer. This gives it stable handling (the bytes you write are non-volatile) with dynamic responsiveness (you can write them very fast!)

EEPROM Memory IC 256Kbit I2C 1 MHz 500 ns 8-TSSOP #CommonPartsLibrary #IntegratedCircuit #Memory #EEPROM #CAT24C256

EEPROM Memory IC 256Kbit I2C 400 kHz 900 ns 8-SOIC #commonpartslibrary #integratedcircuit #memory

EEPROM Memory IC 256Kbit I2C 1 MHz 450 ns 8-SO The M24256E-FMN6TP is a 256-Kbit (32 Kbyte) I²C-compatible serial EEPROM from STMicroelectronics. It is designed for reliable, non-volatile data storage in a wide range of electronic applications including consumer, industrial, and automotive systems. The device supports standard (100 kHz), fast (400 kHz), and fast-mode plus (1 MHz) I²C communication, enabling efficient data transfer. It features byte and page write operations, low power consumption, and a high endurance of write cycles, making it suitable for frequent data logging and configuration storage. Housed in a compact SO8 package, the device is optimized for space-constrained PCB designs while maintaining robust performance and data retention capabilities. Key Features Memory size: 256 Kbit (32 Kbyte) Interface: I²C (2-wire serial interface) Clock frequency: Standard mode: 100 kHz Fast mode: 400 kHz Fast-mode Plus: 1 MHz Supply voltage range: 1.7 V to 5.5 V Page write capability: up to 64 bytes Write cycle time: ~5 ms (typical) Data retention: > 200 years Endurance: > 4 million write cycles Hardware write protection available ESD protection and latch-up immunity Functional Description The device operates as a slave on the I²C bus and supports: Byte write and read Page write (up to 64 bytes) Random and sequential read operations Memory addressing is internally managed using a 16-bit address pointer, allowing access to the full 32 KB memory array. The device includes an internal write cycle controller, eliminating the need for external timing management. Pin Configuration (SO8 Package) A0, A1, A2: Device address inputs VSS: Ground SDA: Serial data line SCL: Serial clock line WC: Write control (hardware write protection) VCC: Supply voltage Absolute Maximum Ratings Supply voltage (VCC): -0.3 V to 6.5 V Input voltage: -0.3 V to VCC + 0.6 V Storage temperature: -65°C to +150°C Operating temperature (industrial grade): -40°C to +85°C Electrical Characteristics Low standby current: < 1 µA (typical) Operating current: < 1 mA Input/output compatible with CMOS logic levels Schmitt trigger inputs for noise immunity Timing Characteristics Write cycle time: 5 ms (typical) Fast-mode Plus support up to 1 MHz Sequential read supports continuous data streaming Package Information Package type: SO8 (8-lead Small Outline) Mounting: Surface-mount (SMD) Tape & reel packaging (TP suffix) Applications Configuration storage Calibration data storage Data logging systems Industrial control systems Consumer electronics Embedded systems requiring non-volatile memory Advantages High endurance and long data retention Wide voltage range (ideal for mixed-voltage systems) Compact footprint High-speed I²C compatibility (up to 1 MHz) #commonpartslibrary #integratedcircuit #memory

SRAM - Asynchronous Memory IC 256Kbit Parallel 45 ns 28-TSOP I #commonpartslibrary #integratedcircuit #memory

EEPROM Memory IC 256Kbit I2C 1 MHz 550 ns 8-SOIC #CommonPartsLibrary #IntegratedCircuit #Memory #AT24C256C

EPROM - OTP Memory IC 256Kbit Parallel 45 ns 28-PDIP #commonpartslibrary #integratedcircuit #memory

EEPROM Memory IC 256Kbit I2C 400 kHz 900 ns 8-SOIC #CommonPartsLibrary #IntegratedCircuit #Memory #24AA256

SRAM Memory IC 256Kbit SPI 20 MHz 8-SOIC #CommonPartsLibrary #IntegratedCircuit #Memory #SRAM #23K256

EEPROM Memory IC 256Kbit SPI 20 MHz 8-SOIC#CommonPartsLibrary #IntegratedCircuit #Memory #M95256

EEPROM Memory IC 256Kbit Parallel 150 ns 28-SOIC #CommonPartsLibrary #IntegratedCircuit #memory #AT28C256

EEPROM Memory IC 256Kbit I²C 1 MHz 550 ns 8-PDIP #EEPROM #i2c #memory

EEPROM Memory IC 256Kbit I²C 400 kHz 900 ns 8-SOIJ #CommonPartsLibrary #IntegratedCircuit #Memory #24AA256

EPROM - UV Memory IC 256Kbit Parallel 150 ns 28-CDIP Frit Seal with Window #commonpartslibrary #integratedcircuit #memory

SRAM - Asynchronous Memory IC 256Kbit Parallel 55 ns 28-SOIC #CommonPartsLibrary #IntegratedCircuit #Memory #CY62256