Sound Plus™ Low-Power, Low-Noise, High-Performance Dual Bipolar-Input Audio Op Amp VSSOP-8 #CommonPartLibrary #IntegratedCircuits #Amplifiers #Instrumentation #OPAmp #BufferAmps #Linear #OPA1692

7.5A Id, 20V Vds, Dual N-Channel MOSFET, 18mOhm Ron, SO-8 Dual N-Channel MOSFET SOIC*3.9x4.9mm*P1.27mm*

555 Type, Timer/Oscillator (Dual) IC 100kHz 14-SOIC #CommonPartLibrary #IntegratedCircuits #timer #Oscillator

Single-channel high-speed low-side MOSFET/IGBT gate driver with 4-A source/8-A sink, split outputs for independent turn-on/off control, dual inverting/noninverting inputs, 4.5–18 V supply, 13 ns typical delay, and UVLO in SOT-23-6.

Bipolar (BJT) Transistor Array 2 NPN (Dual) 40V 600mA 300MHz 200mW Surface Mount SOT-363 #CommonPartsLibrary #Transistors #Bipolar(BJT) #DualNPN #BipolarTransistorArrays

Mosfet Array 30V 6A (Tc) 2.6W (Ta), 23W (Tc) Surface Mount PowerPAK® 1212-8 Dual #CommonPartsLibrary #Transistor #FET #Mosfet #Mosfet-Array #TrenchFET #SI7223

2 Circuit IC Switch 2:1 10Ohm 10-UQFN (2.0x1.5) The TS5A23157 device is a dual single-pole doublethrow (SPDT) analog switch designed to operate from 1.65 V to 5.5 V. This device can handle both digital and analog signals. Signals up to 5.5 V (peak) can be transmitted in either direction. Features 1• Low ON-State Resistance (15 Ω at 125℃) • 125℃ Operation • Control Inputs are 5-V Tolerant • Specified Break-Before-Make Switching • Low Charge Injection • Excellent ON-Resistance Matching • Low Total Harmonic Distortion • 1.8-V to 5.5-V Single-Supply Operation • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) 2 Applications • Sample-and-Hold Circuits • Battery-Powered Equipment • Audio and Video Signal Routing • Communication Circuits #commonpartslibrary #integratedcircuit #circuitswitch #TexasInstruments #AnalogSwitch #SPDT #SignalRouting #Multiplexer #LowOnResistance #HighSpeedSwitching #UQFN #EmbeddedSystems #ElectronicsDesign

OSD32MP15x Embedded Module Arm® Dual Cortex®-A7, Arm® Cortex®-M4 NEON™ SIMD 650MHz, 209MHz #CommonPartsLibrary #IntegratedCircuit #Embedded #Microcontroller #Microprocessor #FPGA

Bipolar (BJT) Transistor Array 2 PNP (Dual) Matched Pair 65V 100mA 175MHz 380mW Surface Mount 6-TSOP The BCM856DS,115 is a dual matched PNP bipolar junction transistor (BJT) housed in a compact SOT-363 (SC-88) 6-pin surface-mount package. It consists of two independent PNP transistors with closely matched electrical characteristics, making it suitable for differential amplifier stages, current mirrors, and signal processing applications where symmetry and thermal tracking are important. Key Features Dual PNP transistor configuration in a single package Matched transistor pair for improved circuit stability Low collector-emitter saturation voltage High current gain consistency between channels Compact SOT-363 (SC-88) package for space-constrained designs Suitable for low-power and signal-level applications Electrical Characteristics (typical values unless otherwise noted) Collector-Emitter Voltage (VCEO): -45 V Collector-Base Voltage (VCBO): -50 V Emitter-Base Voltage (VEBO): -5 V Continuous Collector Current (IC): -100 mA per transistor Power Dissipation (Ptot): ~250 mW total DC Current Gain (hFE): 100 to 300 Transition Frequency (fT): ~100 MHz Package Information Package Type: SOT-363 (SC-88) Mounting: Surface Mount Pin Count: 6 Configuration: Dual PNP (E1, B1, C2, E2, B2, C1 pin arrangement depending on layout) Applications Differential amplifier input stages Current mirror circuits Signal amplification Analog front-end designs Matched pair transistor applications Additional Notes The two transistors are thermally coupled within the same package, improving matching over temperature variations Ideal for precision analog circuits requiring closely matched transistor characteristics Commonly used in compact and high-density PCB layouts #commonpartslibrary #transistor #bjt #pnp