This is a recreation of the [EV5920-5048-V-00A](https://www.monolithicpower.com/en/ev5920-5048-v-00a.html) from MPS which demonstrates a MP5920 Hot-Swap controller commanding 5 MP5048 e-fuses in parallel. WIP Items: -Routing In flux, this project demonstrates hierarchal design through the use of modules. Additionally, parametric symbols are used extensively to improve schematic cleanliness. Components in the canvas are locked because their positions correspond to the same positions as the original layout. Changelog from Original MPS Design: - Not including GPIO2 or GPIO3 as included in the original board due to NC pin name on the IC. - PC1 and PC2 footprints are 5mm in pitch and 12.5mm in diameter rather than the 16mm diameter in the original layout. This change corresponds with the selected part more accurately. -Renamed Designators to be More Verbose

This is a recreation of the [EV5920-5048-V-00A](https://www.monolithicpower.com/en/ev5920-5048-v-00a.html) from MPS which demonstrates a MP5920 Hot-Swap controller commanding 5 MP5048 e-fuses in parallel. WIP Items: -Routing In flux, this project demonstrates hierarchal design through the use of modules. Additionally, parametric symbols are used extensively to improve schematic cleanliness. Components in the canvas are locked because their positions correspond to the same positions as the original layout. Changelog from Original MPS Design: - Not including GPIO2 or GPIO3 as included in the original board due to NC pin name on the IC. - PC1 and PC2 footprints are 5mm in pitch and 12.5mm in diameter rather than the 16mm diameter in the original layout. This change corresponds with the selected part more accurately. -Renamed Designators to be More Verbose

This is a recreation of the [EV5920-5048-V-00A](https://www.monolithicpower.com/en/ev5920-5048-v-00a.html) from MPS which demonstrates a MP5920 Hot-Swap controller commanding 5 MP5048 e-fuses in parallel. In Flux, this project demonstrates hierarchical design through the use of modules. Additionally, parametric symbols are used extensively to improve schematic cleanliness. Components in the canvas are locked because their positions correspond to the same positions as the original layout. Changelog from Original MPS Design: - Not including GPIO2 or GPIO3 as included in the original board due to NC pin name on the IC. - PC1 and PC2 footprints are 5mm in pitch and 12.5mm in diameter rather than the 16mm diameter in the original layout. This change corresponds with the selected part more accurately. -Renamed Designators to be More Verbose

The TPS25200 is a 5-V eFuse with precision current limit and overvoltage clamp. The device provides robust protection for load and source during overvoltage and overcurrent events.

The TPS25200 is a 5-V eFuse with precision current limit and overvoltage clamp. The device provides robust protection for load and source during overvoltage and overcurrent events.

The TPS25200 is a 5-V eFuse with precision current limit and overvoltage clamp. The device provides robust protection for load and source during overvoltage and overcurrent events.

AI-SBC: compact high-lane-count compute board with 4x M.2 NVMe, dual PCIe Gen5 x16 slots, dual-input power ORing + eFuse, VRM rail placeholders, rich IO panel, and Arduino header area

Isolated Polyphase IIoT Energy Meter with ESP32-S3-WROOM-2-N32R16V & ADE9000 | UART Programming Pads | 100 nF Per-VDD Decoupling + 10 µF Bulk on 3.3 V Rail | Defined RF Antenna Keepout | USB-C UFP 5 V Input with eFuse | Maintained HV/LV Isolation

USB-C Powered Arduino Nano ESP32 Soil Monitor with Protected 5 V Rail, Integrated eFuse (OVP/UVLO), 3.3 V Synchronous Buck, SPI Level Shifting, and Optimized 4-Layer Layout

The IPB017N10N5LF is a high-performance N-channel MOSFET from Infineon's OptiMOS™ 5 Linear FET series, designed specifically for hot-swap and e-fuse applications. This 100 V component, housed in a D2-PAK 7pin package (PG-TO 263-7), features exceptionally low on-resistance (RDS(on)) and a wide safe operating area (SOA), making it ideal for demanding power management tasks. The device is rated for a continuous drain current of up to 180 A (silicon limited) and 314 A (package limited), with a maximum pulsed drain current of 720 A. It supports gate-source voltages ranging from -20 V to 20 V and is 100% avalanche tested, ensuring robust performance under extreme conditions. The IPB017N10N5LF is RoHS compliant, Pb-free, and halogen-free, adhering to environmental standards. Key electrical characteristics include a maximum RDS(on) of 1.7 mΩ at VGS=10 V and a gate threshold voltage range of 2.5 V to 4.1 V. This MOSFET is suitable for applications requiring high efficiency and reliability, supported by its qualification according to JEDEC standards.