32-bit ARM Cortex-M0 microcontroller, 32 kB flash, 4 kB RAM, Silicon Labs - Happy Gecko, QFN-24 MCU microcontroller silicon labs siliconlabs silabs EFM32 happy gecko QFN*1EP*5x5mm*P0.65mm*

32-bit ARM Cortex-M0 microcontroller, 32 kB flash, 4 kB RAM, Silicon Labs - Happy Gecko, QFN-24 MCU microcontroller silicon labs siliconlabs silabs EFM32 happy gecko QFN*1EP*5x5mm*P0.65mm*

MikroBUS socket for EFR32xG24 Explorer Kit is a small form factor development and evaluation platform based on the EFR32MG24 System-on-Chip. The EFR32xG24 Explorer Kit is focused on rapid prototyping and concept creation of IoT applications for 2.4 GHz wireless protocols including Bluetooth LE, Bluetooth mesh, Zigbee, Thread, and Matter. #template #arduino-matter #arduino #siliconlabs #bluetooth #thread #zigbee #matter

4A Gate Driver RF Coupling 2500Vrms 1 Channel 8-SOIC Confirmed — this is a Skyworks (formerly Silicon Labs) Si827x-family isolated gate driver, single-channel, with deglitch and UVLO, in the "GBD" variant (3V UVLO threshold). Here's the spec. Engineering Specification — Si8271GBD-IS Manufacturer: Skyworks Solutions, Inc. (formerly Silicon Labs) Device Family: Si827x ISOdriver General Description The Si8271GBD-IS is a single-channel isolated gate driver integrated circuit manufactured by Skyworks Solutions, designed to drive power switching devices such as MOSFETs, IGBTs, and wide-bandgap SiC or GaN FETs in power conversion applications. The device uses Skyworks' proprietary silicon-based galvanic isolation technology rather than the optical isolation used in traditional optocoupler-based gate drivers, providing a more robust, longer-lasting, and more precisely matched isolation barrier between the low-voltage control circuitry and the high-voltage power switching stage. This isolation approach delivers several advantages over legacy optocoupler solutions, including significantly higher common-mode transient immunity, which allows the device to maintain reliable signal integrity even when subjected to the very fast voltage transients generated by high-speed switching in modern power converters. The device's high noise immunity prevents these switching-induced transients from corrupting the gate drive signal, eliminating a common failure mode in less robust isolated driver designs where fast edge rates can cause spurious switching or loss of control. The silicon isolation technology also provides tighter timing specifications, reduced timing variation across temperature and device lifetime, and better part-to-part matching than optocoupler-based alternatives, all of which contribute to more predictable and efficient power stage operation. The device includes an integrated de-glitch filtering circuit on its input, which screens out short noise spikes or unwanted transitions on the control input before they can be passed through to the gate drive output, improving overall system robustness in electrically noisy environments. Undervoltage lockout protection is built into the device, automatically disabling the gate drive output if the supply voltage falls below a safe operating threshold, protecting the driven power switch from being driven with insufficient gate voltage, which could otherwise lead to excessive conduction losses or device damage. The device also provides a dead-time programming feature, allowing designers to precisely tune the timing margin between switching transitions in half-bridge or similar topologies, helping to prevent shoot-through conditions while minimizing unnecessary dead time that would otherwise reduce converter efficiency. The Si8271GBD-IS operates from a wide input supply voltage range and supports drive voltages suitable for a broad range of gate drive requirements, making it adaptable to many different power switch types and converter topologies. It is built to operate reliably across a wide ambient temperature range, supporting use in demanding industrial, telecom, and renewable energy power conversion environments. The device is housed in a compact surface-mount package suited to dense power converter board layouts, and its construction reflects the long-life, high-reliability design philosophy that distinguishes silicon-isolation-based gate drivers from optocoupler-based alternatives. Spec Sheet Identification Part Number: Si8271GBD-IS Device Family: Si827x ISOdriver series Manufacturer: Skyworks Solutions (formerly Silicon Labs) Functional Classification Device Type: Single-channel isolated gate driver Isolation Technology: Proprietary silicon-based galvanic isolation Driven Device Types: MOSFETs, IGBTs, SiC FETs, GaN FETs Output Configuration: Separate pull-up/pull-down driver outputs Isolation & Noise Performance Isolation Withstand Voltage: High-voltage reinforced isolation rating per UL1577 and VDE0884 standards Common-Mode Transient Immunity (CMTI): High-performance CMTI rating for fast-switching robustness Input Filtering: Integrated de-glitch circuit for noise rejection Protection & Control Features Undervoltage Lockout (UVLO): Integrated UVLO fault protection with driver shutdown Dead-Time Control: Precision dead-time programmability via dedicated control pin Input Logic: TTL-level compatible input with wide noise-margin hysteresis Electrical Characteristics Input Supply Voltage Range: Wide-range low-voltage logic supply Drive Supply Voltage: Higher-voltage gate drive supply rail support Propagation Delay: Fast, tightly specified propagation timing Environmental & Qualification Operating Temperature Range: Extended industrial temperature range RoHS Compliance: Yes Lifecycle Status: Active production Package Package Type: Narrow-body small-outline surface-mount package (SOIC-8) Mounting: Surface mount technology (SMT) Packaging Format Supply Format: Tube or tape-and-reel packaging options #Si8271 #Si827x #Skyworks #SiliconLabs #IsolatedGateDriver #ISOdriver #GateDriverIC #MOSFETDriver #IGBTDriver #SiCFET #GaNDriver #PowerElectronics #GalvanicIsolation #CMTI #SOIC #SurfaceMount #SemiconductorIC #EngineeringSpec #ComponentLibrary #CommonPartsLibrary #RoHSCompliant

Bluetooth, WiFi 802.11b/g/n/ax, Bluetooth v5.4 Transceiver Module 2.4GHz Integrated, Chip Surface Mount Silicon Labs SiWG917 module is our lowest power Wi-Fi 6 plus Bluetooth LE 5.4, ideal for ultra-low power IoT wireless devices using Wi-Fi®, Bluetooth, Matter, and IP networking for secure cloud connectivity. It is optimal for developing battery operated devices that need long battery life. SiWG917 module includes an ultra-low power Wi-Fi 6 plus Bluetooth Low Energy (LE) 5.4 wireless CPU subsystem, and an integrated micro-controller (MCU) application subsystem, security, peripherals and power management subsystem all in a single 16 x 21.1 x 2.3 mm package. The wireless subsystem consists of a multi-threaded Network Wireless Processor (NWP) running up to 160 MHz, baseband digital signal processing, analog front end, 2.4 GHz RF transceiver and integrated power amplifier. The application subsystem consists of an ARM® Cortex®-M4 running up to 180 MHz, embedded SRAM, flash, ultra-low power sensor hub, and matrix vector processor. The ARM® Cortex®-M4 is dedicated for peripheral and application-related processing, while the NWP runs the wireless and networking stacks on independent threads, thus providing a fully integrated solution that is ready for a wide range of embedded wireless IoT applications. The modules come with modular radio type approvals for various countries, including USA (FCC), Canada (IC/ISED) and Japan (MIC), and are in compliance with the relevant EN standards (including EN 300 328 v2.2.2) for the conformity with the directives and regulations in EU and UK. KEY FEATURES • Wi-Fi 6 Single Band 2.4 GHz 20 MHz 1x1 stream IEEE 802.11 b/g/n/ax • Bluetooth LE 5.4 • Single chip Matter Over Wi-Fi Solution • ARM® Cortex® M4 Processor with FPU subsystem up to 180 MHz with rich set of Digital and Analog Peripherals. • Wi-Fi 6 Benefits: TWT for improved efficiency and longer battery life, MUMIMO/OFDMA for Higher Throughput, network capacity and low latency • Best in Class Device and Wireless Security • WLAN Tx power up to +17.5 dBm with integrated PA • Bluetooth LE Tx power up to +17 dBm with integrated PA • WLAN Rx sensitivity as low as -95.5 dBm • Wi-Fi 4 Standby Associated mode current: 71 μA @ 1-second listen interval • Embedded Flash option up to 8 MB/ optional external Flash up to 16 MB • Embedded PSRAM option up to 2 MB/ optional external PSRAM option up to 16 MB • Ultra-low power sensor hub peripherals • Matrix Vector Processor (MVP) • Embedded Wi-Fi, Bluetooth LE, Matter, and networking stacks supporting wireless coexistence • Three software-configurable MCU application memory options for sharing the RAM between the wireless, system, and application (192/256/320 KB) • Operating temperature: -40 to +85 ºC • Operating supply range: 3.0 to 3.63 V • Supply voltage for GPIOs: 1.71 to 3.63 V #WiFi6 #BluetoothLE54 #IoTModule #WirelessSoC #SiliconLabs #EmbeddedSystems #SmartHome #IndustrialIoT #LowPowerDesign #RFModule #ConnectedDevices #EdgeComputing #MatterReady #PCBDesign #ElectronicsEngineering