Bipolar (BJT) Transistor Array 2 PNP (Dual) Matched Pair 65V 100mA 175MHz 380mW Surface Mount 6-TSOP
The BCM856DS,115 is a dual matched PNP bipolar junction transistor (BJT) housed in a compact SOT-363 (SC-88) 6-pin surface-mount package. It consists of two independent PNP transistors with closely matched electrical characteristics, making it suitable for differential amplifier stages, current mirrors, and signal processing applications where symmetry and thermal tracking are important.
Key Features
Dual PNP transistor configuration in a single package
Matched transistor pair for improved circuit stability
Low collector-emitter saturation voltage
High current gain consistency between channels
Compact SOT-363 (SC-88) package for space-constrained designs
Suitable for low-power and signal-level applications
Electrical Characteristics (typical values unless otherwise noted)
Collector-Emitter Voltage (VCEO): -45 V
Collector-Base Voltage (VCBO): -50 V
Emitter-Base Voltage (VEBO): -5 V
Continuous Collector Current (IC): -100 mA per transistor
Power Dissipation (Ptot): ~250 mW total
DC Current Gain (hFE): 100 to 300
Transition Frequency (fT): ~100 MHz
Package Information
Package Type: SOT-363 (SC-88)
Mounting: Surface Mount
Pin Count: 6
Configuration: Dual PNP (E1, B1, C2, E2, B2, C1 pin arrangement depending on layout)
Applications
Differential amplifier input stages
Current mirror circuits
Signal amplification
Analog front-end designs
Matched pair transistor applications
Additional Notes
The two transistors are thermally coupled within the same package, improving matching over temperature variations
Ideal for precision analog circuits requiring closely matched transistor characteristics
Commonly used in compact and high-density PCB layouts
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