This is a IR2110 high side mosfet driver circuit with mosfet included. This is a circuit I use often and I believe it is time to give it its own board and project.

Welcome to your new project. Imagine what you can build here.

Welcome to your new project. Imagine what you can build here.

30V 12A 940mW 9.5mΩ@10V,11.5A P Channel PowerDI3333-8 MOSFETs

This project is a Lithium-ion battery charger circuit based on LTC4007 IC. The design incorporates n-channel power MOSFETs and extensive protection features for overcurrent, overvoltage, undervoltage, and overtemperature conditions. It is ideal for portable, battery-powered systems. #project #LTC4007 #ReferenceDesign #charger #BatteryManagement #reusable #module #bms #analog #template

This project is a Lithium-ion battery charger circuit based on LTC4007 IC. The design incorporates n-channel power MOSFETs and extensive protection features for overcurrent, overvoltage, undervoltage, and overtemperature conditions. It is ideal for portable, battery-powered systems. #project #LTC4007 #ReferenceDesign #charger #BatteryManagement #reusable #module #bms #analog #template

This project is a reference design for the VCNL3040 sensor interfaced via I2C. It includes a VCNL3040 ambient light sensor, a voltage regulator (AP2112K-3.3TRG1), an I2C level shifter using BSS138 MOSFETs, and necessary support components. Circuit interfaces through a JST connector. All components are powered by a 3.3V power source. #referenceDesign #industrialsensing #vishay #template #reference-design

2 Mosfets

This project is a Lithium-ion battery charger circuit based on LTC4007 IC. The design incorporates n-channel power MOSFETs and extensive protection features for overcurrent, overvoltage, undervoltage, and overtemperature conditions. It is ideal for portable, battery-powered systems. #project #LTC4007 #ReferenceDesign #charger #BatteryManagement #reusable #module #bms #analog #template

This project is a Lithium-ion battery charger circuit based on LTC4007 IC. The design incorporates n-channel power MOSFETs and extensive protection features for overcurrent, overvoltage, undervoltage, and overtemperature conditions. It is ideal for portable, battery-powered systems. #project #LTC4007 #ReferenceDesign #charger #BatteryManagement #reusable #module #bms #analog #template

This project is a design for a UV sensor circuit based on the Lite-On LTR-390UV-01. Key components include a voltage regulator (AP2112K-3.3TRG1), level-shifting N-channel MOSFETs (BSS138), resistors, and capacitors. The circuit interface includes I2C communication and power connections, facilitated through JST connectors. #referenceDesign #industrialsensing #liteon #template #reference-design

MOSFETs AGM318MAP PDFN3333-8_L3.3-W3.3 1-PMOS AND 1-NMOS

MOSFETs RUH4040M2 PDFN3333-8_L3.1-W3.2-P0.65-LS3.4-BL LCSC Part Number: C521556 JLCPCB Part Class: Extended Part Manufactured by Ruichips(锐骏半导体)

MOSFETs VBK3215N SC-70-6_L2.2-W1.3-P0.65-LS2.1-BR LCSC Part Number: C516947 JLCPCB Part Class: Extended Part Manufactured by VBsemi(微碧半导体)

MOSFETs VBK3215N SC-70-6_L2.2-W1.3-P0.65-LS2.1-BR LCSC Part Number: C516947 JLCPCB Part Class: Extended Part Manufactured by VBsemi(微碧半导体)

MOSFETs VBK3215N SC-70-6_L2.2-W1.3-P0.65-LS2.1-BR LCSC Part Number: C516947 JLCPCB Part Class: Extended Part Manufactured by VBsemi(微碧半导体)

TMF8801-1BM time-of-flight (ToF) sensor from ams-OSRAM. It comprises electronic components such as resistors, capacitors, voltage regulators, and GPIO connectors. The logic signals are managed via Mosfets BSS138 while the Sensor IC is powered & controlled by a 3.3V AP2112K Voltage Regulator.

The TPSM64404, TPSM64406, and TPSM64406E from Texas Instruments are highly integrated synchronous buck power modules designed for high power density and low EMI performance. These modules feature integrated MOSFETs, inductors, and controllers within a compact 6.5mm × 7.0mm × 2mm overmolded package, making them ideal for space-constrained applications. They support a wide input voltage range of 3V to 36V and deliver adjustable output voltages from 0.8V to 16V. The TPSM64404 offers dual 2A outputs or a stackable 4A output, while the TPSM64406 and TPSM64406E provide dual 3A outputs or a stackable 6A output, with the TPSM64406E rated for extended temperature ranges down to -55℃. These modules achieve peak efficiencies exceeding 93.5% and feature ultra-low quiescent current, making them suitable for battery-powered applications. Designed to meet stringent EMI standards, the modules include features such as dual input paths, integrated capacitors, spread spectrum modulation, and low-noise packaging. Additional functionalities include precision enable inputs, power-good indicators, overcurrent protection, thermal shutdown, and the ability to configure for multiphase operation up to 18A. The TPSM6440xx series is optimized for test and measurement, aerospace, defense, and factory automation applications.

Texas Instruments' TPSM6440xx series, including the TPSM64404, TPSM64406, and TPSM64406E, are highly integrated synchronous buck power modules designed for applications requiring high power density and low EMI. These modules support dual output or multiphase single output configurations, operating over a wide input voltage range from 3V to 36V and delivering adjustable output voltages from 0.8V to 16V. Encased in a compact 6.5mm x 7.0mm x 2mm overmolded package, they feature integrated MOSFETs, inductors, and controllers, ensuring ease of design and high efficiency with peak performance exceeding 93.5%. The TPSM6440xx modules are optimized for low noise and EMI, meeting CISPR 11 and 32 Class B emissions standards. They include robust protection features like precision enable inputs, power good indicators, overcurrent, and thermal shutdown protections, making them suitable for demanding applications in test and measurement, aerospace, defense, and factory automation. With a flexible design approach, these modules can be easily configured using Texas Instruments' WEBENCH® Power Designer tool.

This is a reference design of a PCB utilizing the TMF8820-1AM time-of-flight (ToF) sensor from ams-OSRAM. It comprises electronic components such as resistors, capacitors, voltage regulators, and GPIO connectors. The logic signals are managed via Mosfets BSS138 while the Sensor IC is powered & controlled by a 3.3V AP2112K Voltage Regulator. #industrialSensing #referenceDesign #lzer #I2C #osramusa #template #reference-design

This project is a design for a UV sensor circuit based on the Lite-On LTR-390UV-01. Key components include a voltage regulator (AP2112K-3.3TRG1), level-shifting N-channel MOSFETs (BSS138), resistors, and capacitors. The circuit interface includes I2C communication and power connections, facilitated through JST connectors. #referenceDesign #industrialsensing #liteon #template #reference-design

The NTS4001N and NVS4001N are single N-Channel, small signal MOSFETs from ON Semiconductor, housed in a compact SC-70/SOT-323 package. These components are designed for applications requiring efficient low-side load switching, such as Li-Ion battery-supplied devices including cell phones, PDAs, and digital still cameras, as well as for use in buck converters and level shifters. Featuring a maximum drain-to-source voltage (VDSS) of 30 V and a continuous drain current (ID) of 270 mA at 25°C, these MOSFETs are optimized for fast switching with low gate charge. The gate-to-source voltage (VGS) can withstand up to ±20 V, and the devices are ESD protected and AEC-Q101 qualified, making them suitable for automotive applications. The NTS4001N and NVS4001N are also Pb-Free and RoHS compliant, ensuring environmental compliance. With a typical RDS(on) of 1.0 Ω at VGS = 4.0 V and 1.5 Ω at VGS = 2.5 V, these MOSFETs offer reliable performance in a small footprint, 30% smaller than the TSOP-6 package.

This project is a Lithium-ion battery charger circuit based on LTC4007 IC. The design incorporates n-channel power MOSFETs and extensive protection features for overcurrent, overvoltage, undervoltage, and overtemperature conditions. It is ideal for portable, battery-powered systems. #project #LTC4007 #ReferenceDesign #charger #BatteryManagement #referenceDesign #bms #analog #template #reference-design #polygon

The NTJD4001N and NVTJD4001N from ON Semiconductor are dual N-Channel MOSFETs designed for small signal applications. Encased in a compact SC-88 (SOT-363) package, these MOSFETs offer a drain-to-source voltage (VDSS) of 30 V and a continuous drain current (ID) of up to 250 mA at 25°C. Key features include low gate charge for fast switching, ESD-protected gates, and AEC-Q101 qualification, making them suitable for use in automotive environments. These MOSFETs are ideal for applications such as low side load switches, Li-Ion battery-powered devices (e.g., cell phones, PDAs, DSCs), buck converters, and level shifters. The devices are RoHS compliant and Pb-free, ensuring environmental compliance and reliability. The thermal resistance from junction to ambient is 458°C/W, and the devices can operate within a temperature range of -55°C to 150°C. The NTJD4001N and NVTJD4001N also feature low RDS(on) values, ensuring efficient performance in various electronic circuits.

The NTJD4001N and NVTJD4001N from ON Semiconductor are dual, N-channel MOSFETs designed for small signal applications. These components are optimized for low gate charge to enable fast switching speeds and are housed in a compact SC-88 package, which is noted to be 30% smaller than the TSOP-6, allowing for savings in PCB space. Both variants operate with a drain-to-source voltage (VDSS) of 30 V and can handle continuous drain currents of up to 250 mA at 25℃, reducing to 180 mA at 85℃. The devices are distinctive for their ESD protected gates and meet the AEC Q101 qualification criteria, making the NVTJD4001N version particularly suitable for automotive and high-reliability applications. With power dissipation cap of 272 mW at 25℃, these components are ideal for low-power applications like low-side load switches, Li-Ion battery-supplied devices, buck converters, and level shifts. They are furnished in a lead-free, RoHS-compliant package, assuring environmental consideration in both manufacturing and application use. ON Semiconductor emphasizes several key attributes of the NTJD4001N and NVTJD4001N, including their low gate charge feature, small footprint, and robust durability, marked by ESD protection and AEC Q101 qualification for the NVTJD4001N variation. These characteristics make these MOSFETs viable solutions for engineers focusing on optimizing space and power efficiency in their circuit designs, particularly in the realms of portable electronic devices, power management circuits, and various automotive applications.