• Zoophagous Beige Matter Compiler

    Zoophagous Beige Matter Compiler

    - ESP32 DevKitC V4 (microcontroller) - 2x BME280 sensors (temperature, humidity, pressure) - 8ch relay board with 12VDC relays (NO/NC SPDT) - 12VDC power supply - USB connectivity - Various components (resistors, caps, opto couplers, op-amps, motor drivers, multiplexers) - 2x SPDT relay boards (for fan fail-safe) - 4x 2ch bidirectional level controllers (3.3V to 5V) - ESP32 GPIO 21 (SCL) to BME280's SCL - ESP32 GPIO 22 (SDA) to BME280's SDA - ESP32 GPIO 5 (digital output) to 8ch relay board input - ESP32 GPIO 25 (PWM output) -> Fan PWM (0-255 value) - ESP32 GPIO 26 (PWM output) -> Light PWM (0-255 value) - ESP32 GPIO 34 (analog input) -> Tachometer input (0-4095 value, 12-bit ADC) - Add a 5V voltage regulator (e.g., 78L05) to power the ESP32 and other 5V components - Add a 3.3V voltage regulator (e.g., 78L03) to power the BME280 sensors and other 3.3V components - Include decoupling capacitors (e.g., 10uF and 100nF) to filter the power supply lines - Ensure proper grounding and shielding to minimize noise and interference -- Power supply: - VCC=12VD Available, to be used for LM358P - 5V voltage regulator (78L05) - VCC=5V, GND=0V - 3.3V voltage regulator (78L03) - VCC=3.3V, GND=0V - 3.3V voltage regulator (78L03) - VCC=3.3V, GND=0V - Fan PWM boost: - Input (3.3V PWM): 0-3.3V, frequency=20kHz - Output (5V PWM): 0-5V, frequency=20kHz - LM358P op-amp (unity gain buffer) - VCC=5V, GND=0V - R1=1kΩ, R2=1kΩ, R3=1kΩ, R4=1kΩ - C1=10uF (50V), D1=1N4007 - 0-10V signal conditioning: - Input (3.3V PWM): 0-3.3V, frequency=13kHz - Output (0-10V): 0-10V, frequency=13kHz - LM358P op-amp (non-inverting amplifier) - VCC=5V, GND=0V - R5=2kΩ, R6=1kΩ, R7=2kΩ, R8=1kΩ, R9=1kΩ, R10=2kΩ - C2=10uF (50V), R11=10kΩ (1%) ------------------------------------ Fan PWM Boost (3.3V to 5V): 1. ESP32 GPIO 25 (PWM output) -> R1 (1kΩ) -> VCC (3.3V) 2. ESP32 GPIO 25 (PWM output) -> R2 (1kΩ) -> Vin (LM358P) 3. LM358P (Voltage Follower): - VCC (5


  • Pulse_Width_Modulation__ControllerPulse_Width_Modulation__ControllerPulse_Width_Modulation__Controller

    Pulse_Width_Modulation__ControllerPulse_Width_Modulation__ControllerPulse_Width_Modulation__Controller

    This project is a Pulse Width Modulation (PWM) Controller, built around an LM555 timer IC. It controls a load connected to a MOSFET, with adjustments via a potentiometer, and uses capacitors, resistors and diodes for various functions. #PWM #controller #project #Template #projectTemplate


  • PJC831K_R1_000A1 1d51

    PJC831K_R1_000A1 1d51

    The PAN JIT SEMI CONDUCTOR PJC831K is a 50V N-Channel Enhancement Mode MOSFET designed for high-efficiency switching applications. Featuring advanced trench process technology, this component is optimized for switch load and PWM applications and offers ESD protection up to 2KV HBM. The PJC831K, housed in a compact SOT-323 package, supports a maximum continuous drain current of 360 mA and can handle pulsed currents up to 1200 mA. Key electrical characteristics include a drain-source breakdown voltage of 50V, gate threshold voltage ranging from 0.8V to 1.5V, and a maximum RDS(on) of 1.6Ω at VGS=10V and ID=500mA. It also boasts low gate charge and capacitance values, ensuring fast switching performance. The component complies with EU RoHS 2.0 standards and utilizes a green molding compound per IEC 61249 standards, making it an environmentally friendly choice for various electronic designs.


  • Vulnerable Amethyst R2-D2

    Vulnerable Amethyst R2-D2

    Flight controller for flying wing RC plane with 02 esc for brushed motors and pwm signals control for 3 gram servos. Also accelerometer sensor and barometer attached for speed and position. receiver for flysky transmeter.


  • AO3414 610b

    AO3414 610b

    The AO3414, manufactured by Alpha & Omega Semiconductor, is an N-Channel Enhancement Mode Field Effect Transistor (FET) designed using advanced trench technology to deliver superior RDS(ON), low gate charge, and operation with gate voltages as low as 1.8V. Ideal for load switch and PWM applications, the AO3414 is available in a Pb-free version that complies with ROHS and Sony 259 specifications, and a Green Product variant (AO3414L), both of which are electrically identical. Key specifications include a drain-source voltage (VDS) of 20V, a continuous drain current (ID) of 4.2A at VGS=4.5V, and a maximum RDS(ON) of 50mΩ at VGS=4.5V. The device is housed in a TO-236 (SOT-23) package, ensuring compact and efficient thermal performance. Additionally, the AO3414 boasts a maximum power dissipation of 1.4W at TA=25°C, a gate-source voltage (VGS) rating of +8V, and an operating junction temperature range of -55°C to 150°C. This component is optimized for consumer market applications, offering reliable performance and compliance with environmental standards.


  • Substantial Teal Replicator

    Substantial Teal Replicator

    Attempt at a PWM using an NE555P IC (Training)


  • AO3416 e0c7

    AO3416 e0c7

    The AO3416, manufactured by Alpha & Omega Semiconductor, is a 20V N-Channel MOSFET designed using advanced trench technology to deliver superior RDS(ON) performance, low gate charge, and compatibility with gate voltages as low as 1.8V. Ideal for use as a load switch or in PWM applications, the AO3416 features ESD protection and is offered in a compact SOT23 package. Key specifications include a drain-source voltage (VDS) of 20V, a continuous drain current (ID) of 6.5A at VGS=4.5V, and a maximum RDS(ON) of 34mΩ at VGS=1.8V. The component operates efficiently across a temperature range of -55℃ to 150℃ and supports pulsed drain currents up to 30A. Additionally, the AO3416's thermal characteristics ensure robust performance, with a maximum junction-to-ambient thermal resistance of 125°C/W. This device is designed for the consumer market and is not authorized for use in life support systems.


  • PJC831K_R1_000A1

    PJC831K_R1_000A1

    The PAN JIT SEMICONDUCTOR PJC831K is a 50V N-Channel Enhancement Mode MOSFET designed for switch load and PWM applications, with added ESD protection up to 2KV HBM. Utilizing advanced trench process technology, it offers low RDS(on) values of <1.60Ω at VGS=10V, <2.50Ω at VGS=4.5V, and <4.50Ω at VGS=2.5V. The component is capable of handling a continuous drain current of 360 mA and a pulsed drain current of up to 1200 mA, constrained by a maximum power dissipation of 236 mW at 25°C. The MOSFET is housed in a SOT-323 package with excellent thermal resistance characteristics (530°C/W junction to ambient). It meets RoHS 2.0 compliance and IEC 61249 standards with a green molding compound. Featuring minimal gate charge and fast switching times, this MOSFET is optimized for efficiency and reliability in demanding applications.