Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 1200V, 2A TO-220-2 #CommonPartsLibrary #Schottky #Rectifiers #Diodes #SingleDiodes

Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 650V, 6A TO-220-2 #CommonPartsLibrary #Schottky #Diodes #SingleDiodes

Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 1200V, 15A TO-220-2 #CommonPartsLibrary #Schottky #Rectifiers #Diodes #SingleDiodes

Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 1200V, 15A TO-220-2 #CommonPartsLibrary #Schottky #Rectifiers #Diodes #SingleDiodes

Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 650V, 6A TO-220-2 #CommonPartsLibrary #Schottky #Diodes #SingleDiodes

Diode 600 V 11A Through Hole TO-220-2 #CommonPartsLibrary #Schottky #Diodes #SingleDiodes

Schottky Diodes & Rectifiers 1A 600V SIC SCHOTTKY DIODE #CommonPartsLibrary #Schottky #Diodes #SingleDiodes

Schottky Diodes & Rectifiers 1A 600V SIC SCHOTTKY DIODE #CommonPartsLibrary #Schottky #Diodes #SingleDiodes

Schottky Diodes & Rectifiers ZRecTM 16A 650V SiC TO-220-2 #CommonPartsLibrary #Schottky #Rectifiers #Diodes #SingleDiodes

Schottky Diodes & Rectifiers ZRecTM 16A 650V SiC TO-220-2 #CommonPartsLibrary #Schottky #Rectifiers #Diodes #SingleDiodes

600V, 1A, SiC Schottky Diode, TO-252 sic diode TO?252*TabPin1*

1200V, 10A, SiC Schottky Diode, TO-247 sic diode TO?247*

600V, 16A, SiC Schottky Diode, TO-247-3 sic diode TO?247*

600V, 2A, SiC Schottky Diode, TO-220F sic diode TO?220F*

600V, 6A, SiC Schottky Diode, TO-263 sic diode TO?263*TabPin1*

63A Id, 900V Vds, 30mOhm, N-Channel SiC MOSFET, TO-247-4 N-Channel SiC MOSFET TO?247*

36A Id, 900V Vds, 65mOhm, N-Channel SiC MOSFET, TO-247 N-Channel SiC MOSFET TO?247*

35A Id, 900V Vds, 65mOhm, N-Channel SiC MOSFET, TO-263-7 N-Channel SiC MOSFET TO?263*TabPin8*

1200V Half Bridge Gate Driver with active Miller clamp, OCP, SCC , 380ns integrated deadtime, Bootstrap Diode, +/-2.3A drive current, PG-DSO-20-U03 Gate Driver MOSFET IGBT SiC Infineon*PG?DSO?20?U03*7.5x12.8mm*

Silicon Carbide (SiC) N-Channel Power MOSFET for high-efficiency power switching applications, featuring a 650 V drain-to-source voltage, 60 mΩ maximum on-resistance (RDS(on)), and 29 A continuous drain current at 25°C. Based on 3rd Generation SiC MOSFET technology, it provides high-speed switching with low capacitances and a fast intrinsic diode with low reverse recovery (Qrr). Supplied in a TO-247-3 through-hole package with a maximum operating junction temperature of +175°C. #SiCMOSFET #PowerMOSFET #NChannel #650V #29A #60mOhm #TO247 #HighSpeedSwitching #LowCapacitance #FastRecovery #Wolfspeed