Insulated-Gate Field-Effect Transistor (IGFET), N-Channel, Enhancement, Body Diode, Pin 1 Gate, 2-5 Source, 6-10 Drain, 10Pins #CommonPartsLibrary #Transistor #FET #Mosfet #OptiMOS™ 6

180A Id, 100V Vds, OptiMOS-T2 N-Channel Power MOSFET, 2.5mOhm Ron, Qg (typ) 156nC, TO-263-6 OptiMOS-T2 Power MOSFET N-MOS TO?263?6*

N-Channel 60 V 23A (Ta), 100A (Tc) 2.5W (Ta), 83W (Tc) Surface Mount PG-TDSON-8-7 #CommonPartsLibrary #Transistor #FET #Mosfet #OptiMOS™ #BSC028