• wireless power bank

    wireless power bank

    4×4 cm USB-C PD & Qi Wireless Power Bank with Li-Po Charging, Power-Path Management, 3.3 V LDO, Full-Bridge Gate Driver, LED Resistors, and Corrected 5 V Output Feedback (Schematic Cleaned: Redundant Net Portals/Passives Removed, Fuel-Gauge LED Channels Verified, ERC/DRC Issues Resolved)


  • FPGA LED Matrix [Staging_V1_9-15]

    FPGA LED Matrix [Staging_V1_9-15]

    This is a FPGA controller for RGB LED matrix based on ICE40 Field-programmable gate array chip #RGB #FPGA #ICE40HX1K #ICE40 #controller #referenceDesign #project #template #LED #video


  • FPGA LED Matrix Template mYyS 08da b3a5

    FPGA LED Matrix Template mYyS 08da b3a5

    This is a FPGA controller for RGB LED matrix based on ICE40 Field-programmable gate array chip #RGB #FPGA #ICE40HX1K #ICE40 #controller #referenceDesign #project #template #LED #video


  • FPGA VGA Controller Template

    FPGA VGA Controller Template

    This is a VGA signal generation based on ICE40 Field-programmable gate array chip #VGA #FPGA #ICE40HX1K #ICE40 #controller #referenceDesign #project #template #SRAM #video #display


  • FPGA LED Matrix Template mYyS

    FPGA LED Matrix Template mYyS

    This is a FPGA controller for RGB LED matrix based on ICE40 Field-programmable gate array chip #RGB #FPGA #ICE40HX1K #ICE40 #controller #referenceDesign #project #template #LED #video

    &


  • FPGA LED Matrix Template

    FPGA LED Matrix Template

    This is a FPGA controller for RGB LED matrix based on ICE40 Field-programmable gate array chip #RGB #FPGA #ICE40HX1K #ICE40 #controller #referenceDesign #project #template #LED #video

    &


  • FPGA VGA Controller Template

    FPGA VGA Controller Template

    This is a VGA signal generation based on ICE40 Field-programmable gate array chip #VGA #FPGA #ICE40HX1K #ICE40 #controller #referenceDesign #project #template #SRAM #video #display

    &


  • FDB1D7N10CL7 4d05

    FDB1D7N10CL7 4d05

    The FDB1D7N10CL7 is an N-Channel Shielded Gate POWERTRENCH® MOSFET manufactured by ON Semiconductor. This advanced MOSFET leverages ON Semiconductor's POWERTRENCH process, incorporating Shielded Gate technology to deliver minimized on-state resistance and superior switching performance with a high-quality soft body diode. The component features a maximum drain-to-source voltage (VDS) of 100 V and can handle continuous drain currents up to 268 A at 25°C. It boasts a low RDS(on) value of 1.7 mΩ at a gate-to-source voltage (VGS) of 12 V and drain current (ID) of 100 A, making it highly efficient for power management applications. Key applications include industrial motor drives, power supplies, automation, battery-operated tools, solar inverters, and energy storage systems. The FDB1D7N10CL7 is housed in a robust D2PAK7 (TO-263 7 LD) package and is designed to withstand a wide range of operating temperatures from -55°C to +175°C.