The PAN JIT SEMI CONDUCTOR PJC831K is a 50V N-Channel Enhancement Mode MOSFET designed for high-efficiency switching applications. Featuring advanced trench process technology, this component is optimized for switch load and PWM applications and offers ESD protection up to 2KV HBM. The PJC831K, housed in a compact SOT-323 package, supports a maximum continuous drain current of 360 mA and can handle pulsed currents up to 1200 mA. Key electrical characteristics include a drain-source breakdown voltage of 50V, gate threshold voltage ranging from 0.8V to 1.5V, and a maximum RDS(on) of 1.6Ω at VGS=10V and ID=500mA. It also boasts low gate charge and capacitance values, ensuring fast switching performance. The component complies with EU RoHS 2.0 standards and utilizes a green molding compound per IEC 61249 standards, making it an environmentally friendly choice for various electronic designs.

The 2N7002DW, manufactured by iSion, is an N-channel enhancement mode field-effect transistor (FET) designed for high-speed pulse amplifier and drive applications. It is fabricated using the N-channel DMOS process and comes in a compact SOT-363 package. The component offers robust ESD protection compliant with MIL-STD 833, +2.5KV contact discharge. Key features include a drain-source voltage (VDSS) of 60V, a gate-source voltage (VGSS) of +20V, and a continuous drain current (ID) of 300mA, with a pulsed drain current (IDM) of 800mA. The device has a maximum power dissipation (PD) of 350mW and operates within a junction temperature range of -55°C to +150°C. Additionally, it exhibits a low static drain-source on-resistance (RDS(ON)) of 2.0Ω at VGS = 10V and ID = 300mA, making it suitable for efficient switching applications. The thermal resistance from junction to ambient (RθJA) is rated at 500°C/W, ensuring reliable performance in various thermal conditions.

The 2N7002H, manufactured by iSion, is an N-channel enhancement mode field-effect transistor (FET) designed for high-speed pulse amplifier and drive applications. Utilizing the N-Channel DMOS process, this component features robust ESD protection compliant with MIL-STD 833, +2.5KV contact discharge. The 2N7002H is available in a SOT-23 package, ensuring full RoHS compliance and superior solderability as per MIL-STD-202, Method 208. Key specifications include a drain-source voltage (VDSS) of 60V, a gate-source voltage (VGSS) of +20V, and a maximum continuous drain current (ID) of 300mA. The device boasts a low static drain-source on resistance (RDS(ON)) of 2.0Ω at VGS of 10V and ID of 300mA, and dynamic characteristics such as a turn-on delay time (td(on)) of 6ns and a turn-off delay time (td(off)) of 25ns. The component operates within a junction temperature range of -55°C to +150°C and offers thermal resistances of 357°C/W junction-to-ambient and 90°C/W junction-to-case.

The ON Semiconductor® FDMC86102LZ is an advanced N-Channel Shielded Gate PowerTrench MOSFET designed for high-efficiency DC-DC switching applications. Featuring Shielded Gate Technology, this MOSFET boasts a maximum drain-to-source voltage (VDS) of 100 V and a continuous drain current (ID) capability of up to 22 A at 25°C. The device exhibits low on-state resistance with a maximum rDS(on) of 24 mΩ at VGS = 10 V and ID = 6.5 A, and 35 mΩ at VGS = 4.5 V and ID = 5.5 A. It includes a gate-to-source zener diode for enhanced ESD protection, with a typical HBM ESD protection level greater than 6 kV. The FDMC86102LZ is RoHS compliant, 100% UIL tested, and offers superior switching performance due to its optimized PowerTrench® process. The component is packaged in a compact MLP 3.3×3.3 format, making it ideal for space-constrained designs. Its thermal characteristics include a junction-to-case thermal resistance (RθJC) of 3°C/W and a junction-to-ambient thermal resistance (RθJA) of 53°C/W when mounted on a 1 in² pad of 2 oz copper.

The AO3416, manufactured by Alpha & Omega Semiconductor, is a 20V N-Channel MOSFET designed using advanced trench technology to deliver superior RDS(ON) performance, low gate charge, and compatibility with gate voltages as low as 1.8V. Ideal for use as a load switch or in PWM applications, the AO3416 features ESD protection and is offered in a compact SOT23 package. Key specifications include a drain-source voltage (VDS) of 20V, a continuous drain current (ID) of 6.5A at VGS=4.5V, and a maximum RDS(ON) of 34mΩ at VGS=1.8V. The component operates efficiently across a temperature range of -55℃ to 150℃ and supports pulsed drain currents up to 30A. Additionally, the AO3416's thermal characteristics ensure robust performance, with a maximum junction-to-ambient thermal resistance of 125°C/W. This device is designed for the consumer market and is not authorized for use in life support systems.

The NTK3134N from ON Semiconductor is a high-performance, single N-Channel MOSFET designed for power and interface switching applications in ultra-small portable electronics. Packaged in a compact SOT-723 form factor, which is 44% smaller in footprint and 38% thinner than the SC89, this MOSFET features a low RDS(on) for efficient load switching. It operates at low logic level gate drives, with a maximum drain-to-source voltage (VDSS) of 20V and a continuous drain current (ID) of up to 890mA at 25°C. The component supports pulsed drain currents up to 1.8A and boasts ESD protection. The NTK3134N is also Pb-Free, Halogen Free/BFR Free, and RoHS Compliant, making it an environmentally friendly choice for designers. Key applications include load/power switching, interface switching, logic level shifting, and battery management.

The PAN JIT SEMICONDUCTOR PJC831K is a 50V N-Channel Enhancement Mode MOSFET designed for switch load and PWM applications, with added ESD protection up to 2KV HBM. Utilizing advanced trench process technology, it offers low RDS(on) values of <1.60Ω at VGS=10V, <2.50Ω at VGS=4.5V, and <4.50Ω at VGS=2.5V. The component is capable of handling a continuous drain current of 360 mA and a pulsed drain current of up to 1200 mA, constrained by a maximum power dissipation of 236 mW at 25°C. The MOSFET is housed in a SOT-323 package with excellent thermal resistance characteristics (530°C/W junction to ambient). It meets RoHS 2.0 compliance and IEC 61249 standards with a green molding compound. Featuring minimal gate charge and fast switching times, this MOSFET is optimized for efficiency and reliability in demanding applications.