This is a stereo WiFi camera reference design using dual ESP32-CAM modules for edge computing. The design includes connections for power, ground, and core communication features; UART for control & data transfer, and BOOT pins for mode selection. #WiFi #MCU #stereo #ReferenceDesign #project #ESP32 #camera #referenceDesign #edgeComputing #espressif #template #reference-design

[WIP] Standard SNES controller with dual 4021B ICs.

This is a reference design for TJA1059TKJ Dual high-speed CAN transceiver with Standby mode. It offers advanced features, such as wake-up capability and high-speed data rates, making it suitable for automotive and industrial applications. #MCP25612FD #CANbus #transceiver #highspeed #automotive #referenceDesign #project #CANbus #interface #transceiverCircuit #TJA1059TKJ #referenceDesign #canbus #nxp #template #reference-design

The BSS138DW, manufactured by Diodes Incorporated, is a dual N-channel enhancement mode field-effect transistor (MOSFET) designed for high efficiency power management applications. This component features a low on-state resistance (RDS(on)) of 3.5 ohms at VGS = 10V and can handle a maximum drain current (ID) of 200mA at an ambient temperature of 25°C. With a drain-source voltage (V(BR)DSS) of 50V, the BSS138DW is ideal for load switching applications. The MOSFET offers superior switching performance with low gate threshold voltage, low input capacitance, and fast switching speed. It is fully compliant with RoHS standards and is available in a SOT-363 package. The component is also available in an automotive-compliant version under the part number BSS138DWQ, meeting AEC-Q101 standards for high reliability.

This is a dual voltage input circuit for a NRF battery application.

Dual Motor Driver Circuit using L298N motor driver module with Atmega8a..

This is a reference design for TJA1059TKJ Dual high-speed CAN transceiver with Standby mode. It offers advanced features, such as wake-up capability and high-speed data rates, making it suitable for automotive and industrial applications. #MCP25612FD #CANbus #transceiver #highspeed #automotive #referenceDesign #project #CANbus #interface #transceiverCircuit #TJA1059TKJ #referenceDesign #canbus #nxp #template #reference-design

Dual Motor Driver Circuit using L298N motor driver module with Atmega8a..

This is a reference design for TJA1059TKJ Dual high-speed CAN transceiver with Standby mode. It offers advanced features, such as wake-up capability and high-speed data rates, making it suitable for automotive and industrial applications. #MCP25612FD #CANbus #transceiver #highspeed #automotive #referenceDesign #project #CANbus #interface #transceiverCircuit #TJA1059TKJ #referenceDesign #canbus #nxp #template #reference-design

Dual core, Wi-Fi: 2.4 GHz up to 150 Mbits/s,BLE (Bluetooth Low Energy) and legacy Bluetooth, 32 bits, Up to 240 MHz #esp32 #ble #wifi #arm

Dual Motor Driver Circuit using L298N motor driver module with Atmega8a..

Mic Preamp with Onboard 48 V Phantom Power and Dual Fixed-Gain THAT1512 Channels (0 dB / –20 dB), VR1 Removed, Outputs on J3/J4 #that1512 #phantom48V #fixedgain

The OPA835 and OPA2835 from Texas Instruments are single and dual ultra-low-power, rail-to-rail output, negative-rail input, voltage-feedback (VFB) operational amplifiers designed for optimal performance in battery-powered and portable systems. Operating over a power supply range of 2.5 V to 5.5 V, these op amps consume only 250 µA per channel and offer a unity gain bandwidth of 56 MHz, making them industry leaders in performance-to-power ratio for rail-to-rail amplifiers. These components feature a quiescent current of 250 µA/ch (typical), with a power-down mode reducing current to 0.5 µA (typical), a slew rate of 160 V/µs, a rise time of 10 ns for a 2 V step, and a settling time of 55 ns to 0.1% for a 2 V step. Additional features include a signal-to-noise ratio (SNR) of 0.00015% (-116.4 dBc) at 1 kHz (1 VRMS), total harmonic distortion (THD) of 0.00003% (-130 dBc) at 1 kHz (1 VRMS), and a wide input voltage noise of 9.3 nV/√Hz at 100 kHz. The OPA835 and OPA2835 provide rail-to-rail output swing and input voltage range from -0.2 V to 3.9 V (5-V supply), supporting high-density, low-power signal conditioning applications with an operating temperature range from -40°C to +125°C. These components come in various package options, ensuring flexible integration into diverse electronic designs.

This project is a Advanced Dual Cell Lithium-Ion/Lithium-Polymer Charge Management Controllers utilizing the MCP73844 integratedcircuit. It includes input and output connectors, a charging current programming resistor, decoupling capacitors, and a charge status indicator LED. #project #Template #charger #MCP73844 #2cell #referenceDesign #batterycharger #template #bms #microchip #reference-design #polygon /

The NTJD4001N and NVTJD4001N from ON Semiconductor are dual N-Channel MOSFETs designed for small signal applications. Encased in a compact SC-88 (SOT-363) package, these MOSFETs offer a drain-to-source voltage (VDSS) of 30 V and a continuous drain current (ID) of up to 250 mA at 25°C. Key features include low gate charge for fast switching, ESD-protected gates, and AEC-Q101 qualification, making them suitable for use in automotive environments. These MOSFETs are ideal for applications such as low side load switches, Li-Ion battery-powered devices (e.g., cell phones, PDAs, DSCs), buck converters, and level shifters. The devices are RoHS compliant and Pb-free, ensuring environmental compliance and reliability. The thermal resistance from junction to ambient is 458°C/W, and the devices can operate within a temperature range of -55°C to 150°C. The NTJD4001N and NVTJD4001N also feature low RDS(on) values, ensuring efficient performance in various electronic circuits.

The Texas Instruments OPA835 and OPA2835 are ultra-low-power, rail-to-rail output, negative-rail input, voltage-feedback (VFB) operational amplifiers designed for operation across a wide power supply range of 2.5 V to 5.5 V with a single supply or +1.25 V to +2.75 V with a dual supply. These components are notable for their industry-leading performance-to-power ratio, which features a quiescent current of just 250 µA per channel and a unity gain bandwidth of 56 MHz. They are ideal for battery-powered, portable applications where power efficiency is critical, without compromising on high-frequency performance. The OPAx835 series brings the added benefit of a power-savings mode, reducing current consumption to less than 1.5 µA, making them an attractive choice for high-frequency amplifiers in battery-powered systems. Their compact package options, including SOT-23, SOIC, VSSOP, UQFN, and QFN, cater to space-constrained applications, providing a versatile solution for low-power signal conditioning, audio ADC input buffers, low-power SAR and ΔΣ ADC drivers, portable systems, low-power systems, high-density systems, and ultrasonic flow meters.

Dual Motor Driver Circuit using L298N motor driver module with Atmega8a..

Dual Motor Driver Circuit using L298N motor driver module with Atmega8a..

Dual motor driver based on L293D IC #Sublayout #Module #template #project-template #motor #L293D #driver #motordriver

Dual core, Wi-Fi: 2.4 GHz up to 150 Mbits/s,BLE (Bluetooth Low Energy) and legacy Bluetooth, 32 bits, Up to 240 MHz #esp32 #ble #wifi #arm

The NJM4565 is a high-gain, wide-bandwidth, dual low noise operational amplifier capable of driving 20V peak-to-peak into 400Ω loads. The NJM4565 is good characteristics compared to the NJM4560.

The NTJD4001N and NVTJD4001N from ON Semiconductor are dual, N-channel MOSFETs designed for small signal applications. These components are optimized for low gate charge to enable fast switching speeds and are housed in a compact SC-88 package, which is noted to be 30% smaller than the TSOP-6, allowing for savings in PCB space. Both variants operate with a drain-to-source voltage (VDSS) of 30 V and can handle continuous drain currents of up to 250 mA at 25℃, reducing to 180 mA at 85℃. The devices are distinctive for their ESD protected gates and meet the AEC Q101 qualification criteria, making the NVTJD4001N version particularly suitable for automotive and high-reliability applications. With power dissipation cap of 272 mW at 25℃, these components are ideal for low-power applications like low-side load switches, Li-Ion battery-supplied devices, buck converters, and level shifts. They are furnished in a lead-free, RoHS-compliant package, assuring environmental consideration in both manufacturing and application use. ON Semiconductor emphasizes several key attributes of the NTJD4001N and NVTJD4001N, including their low gate charge feature, small footprint, and robust durability, marked by ESD protection and AEC Q101 qualification for the NVTJD4001N variation. These characteristics make these MOSFETs viable solutions for engineers focusing on optimizing space and power efficiency in their circuit designs, particularly in the realms of portable electronic devices, power management circuits, and various automotive applications.

3- to 5.5-V dual channel 250kbps RS-232 line driver/receiver SOIC-16 #commonpartslibrary #integratedcircuit #interfacedriver #transceiver

USB-C powered RP2350 dual-port SAS interface board with opto-isolated current-loop and RS-232 populate-option front-ends.

USB-C powered RP2350 dual-port SAS interface board with opto-isolated current-loop and RS-232 populate-option front-ends.