Storage Options for ESP32
7:09
Searching library for: "SPI NAND 8Gb"
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Searching: "SPI NAND 8Gb"
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Found 60 results.
Searching: "eMMC 8 GByte"
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Found 75 results.
Searching: "eMMC 64Gb"
Found 45 results.
Searching: "eMMC 8GB"
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Looking for "Power sequencing requirements and recommendations for VCC, VCCQ rails." in 2007301503_Samsung-KLM8G1GETF-B041_C499918.pdf
Looking for "Supported I/O voltage levels and whether VCCQ supports 1.8V and 3.3V." in 2007301503_Samsung-KLM8G1GETF-B041_C499918.pdf
Looking for "Recommended operating conditions for VCC and VCCQ (supply voltage ranges)." in 2007301503_Samsung-KLM8G1GETF-B041_C499918.pdf
Looking for "Bus width support (x1/x4/x8) and maximum interface frequency or speed mode (eMMC 5.1)." in 2007301503_Samsung-KLM8G1GETF-B041_C499918.pdf
Looking for "Decoupling capacitor recommendations and placement for VCC and VCCQ." in 2007301503_Samsung-KLM8G1GETF-B041_C499918.pdf
Looking for "Bus width support (x1/x4/x8) and maximum interface frequency or speed mode (eMMC)." in AllianceMemory_8GB_ASFC8G31M-51BIN_eMMCdatasheet_Jan2022_v1.1.pdf
Looking for "Recommended operating conditions for VCC and VCCQ (supply voltage ranges)." in AllianceMemory_8GB_ASFC8G31M-51BIN_eMMCdatasheet_Jan2022_v1.1.pdf
Looking for "Supported I/O voltage levels and whether VCCQ supports 1.8V and 3.3V." in AllianceMemory_8GB_ASFC8G31M-51BIN_eMMCdatasheet_Jan2022_v1.1.pdf
Looking for "Power sequencing requirements and recommendations for VCC, VCCQ rails." in AllianceMemory_8GB_ASFC8G31M-51BIN_eMMCdatasheet_Jan2022_v1.1.pdf
Looking for "Decoupling capacitor recommendations and placement for VCC and VCCQ." in AllianceMemory_8GB_ASFC8G31M-51BIN_eMMCdatasheet_Jan2022_v1.1.pdf
Looking for "Maximum or peak current consumption on VCC and VCCQ during read/write (ICC values)." in 2007301503_Samsung-KLM8G1GETF-B041_C499918.pdf
Looking for "Decoupling and bypass capacitor recommendations (values per VCC/VCCQ ball)." in 2007301503_Samsung-KLM8G1GETF-B041_C499918.pdf
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Searching library for: "LDO 1.8V 300mA"
Creating search plan for: "LDO 1.8V 300mA"
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Found 51 results.
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Looking for "CMD/DAT line pull-up or pull-down requirements for eMMC host; any external pull-ups needed?" in 2007301503_Samsung-KLM8G1GETF-B041_C499918.pdf
Looking for "RESET pin (RST_n) requirements: polarity, default pull-up, recommended external resistor, and connection guidance." in 2007301503_Samsung-KLM8G1GETF-B041_C499918.pdf
Considering eMMC and ESP32-S3 compatibility.
Table
| Part | MPN | Package | Key notes |
|---|---|---|---|
| ASFC8G31M-51BIN | ASFC8G31M-51BIN | BGA153 11.5x13 | eMMC 5.x, x1/x4/x8, 200 MHz. See Datasheet. Power sequencing guidance and bulk decoupling called out. |
| KLM8G1GETF-B041 | KLM8G1GETF-B041 | BGA153 11.5x13 | Samsung eMMC 5.1, supports x1/x4/x8, 0–200 MHz. VCC 2.7–3.6 V, VCCQ 1.70–1.95 V per datasheet. |
- Samsung KLM8G1GETF-B041
- VCC (NAND core): 2.7–3.6 V.
- VCCQ (I/O): 1.70–1.95 V.
- Bus width: 1/4/8-bit; clock up to 200 MHz.
- Active RMS current (8 GB): up to 180 mA on VCCQ and 50 mA on VCC (measured at x8, HS400; table notes).
- Alliance ASFC8G31M-51BIN
- Notes require VCCQ to ramp before or at the same time as VCC; prefer VCCQ first. Place a 10 µF (or higher) bulk capacitor on each rail close to the device, and decouple each VCC ball locally.
- AP131-18WG-7 — 300 mA, SOT‑23‑5. Datasheet
- LP3982IMM-1.8/NOPB — 300 mA, VSSOP‑8. Datasheet
- Replace microSD: Remove the microSD socket U4. Place the BGA153 eMMC near the ESP32 module U1.
- Reuse the SDIO nets (4‑bit bus):
- CLK: U1 IO10 (Net 29) → eMMC CLK.
- CMD: U1 IO9 (Net 25) → eMMC CMD.
- DAT0: U1 IO11 (Net 9) → eMMC DAT0.
- DAT1: U1 IO12 (Net 24) → eMMC DAT1.
- DAT2: U1 IO3 (Net 28) → eMMC DAT2.
- DAT3: U1 IO46 (Net 27) → eMMC DAT3.
- Keep trace lengths short, reference to solid GND, and length‑match data lines to CLK within a few millimeters.
- Power:
- Tie eMMC VCC to your 3.3 V rail.
- Generate 1.8 V (VCCQ) with the LDO above; sequence VCCQ up before or at the same time as VCC (Alliance datasheet requirement). Ensure VCC ramp is monotonic.
- Reset:
- RST_n is the hardware reset pin (active low). Hold high for normal operation; optionally connect to an ESP32 GPIO for controlled resets. Use a pull‑up to VCCQ as specified in the chosen eMMC’s datasheet.
- Pull resistors (per Samsung datasheet):
- CMD pull‑up RCMD in the range 4.7 kΩ to 100 kΩ to prevent bus floating.
- DAT0–DAT7 pull‑ups RDAT in the range 10 kΩ to 100 kΩ. For a 4‑bit bus, populate DAT0–DAT3.
- Decoupling and bulk caps:
- Place a bulk capacitor of 10 µF (or higher) on VCC and on VCCQ near the eMMC (Alliance datasheet).
- Add high‑frequency decoupling at each VCC/VCCQ ball (place as close as possible as directed by the datasheet).
- Signal integrity:
- If needed, add small series damping (for example, 22–33 Ω) at the source on CLK (and optionally CMD/DAT) to tame ringing; tune by measurement on your PCB.
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Properties
Python
USB, WiFi, Bluetooth
Wi-Fi, Bluetooth
3.3V
10 to 90%
RoHS, FCC, CE
-10°C to 70°C
PCB Trace
RGB LED ring and 1 Button
20,000 hrs
10 years
Wearables
3
2 Microphones and 1 Button
Consumer Electronics
LiPo 2000 mAh
Pricing & Availability
Distributor | Qty 1 |
|---|---|
Arrow | $18.26–$20.56 |
Digi-Key | $18.99–$35.10 |
LCSC | $78.17 |
Mouser | $31.97 |
Verical | $7.34–$13.00 |
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