Project Description Punctuation Edit
N-channel MOSFET, 30V, 0.5A, RDS(on) 0.6Ω typ @VGS=4.5V, 2.5V drive, built-in gate protection diode, 0.4W, SOT-23 (TO-236)N-channel MOSFET, 30V, 0.5A, RDS(on) 0.6Ω typ @VGS=4.5V, 2.5V drive, built-in gate protection diode, 0.4W, SOT-23 (TO-236).