Project Description Punctuation Edit
600V N-channel enhancement-mode MOSFET, 80mA, RDS(on) 100Ω @ VGS=10V, VGS(th) 1.5-3.0V @250µA (1.5-2.6V @8µA), SOT23 (Diodes DS39475 Rev.4-2)600V N-channel enhancement-mode MOSFET, 80mA, RDS(on) 100Ω @ VGS=10V, VGS(th) 1.5-3.0V @250µA (1.5-2.6V @8µA), SOT23 (Diodes DS39475 Rev.4-2).