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    Si2324DS-T1-GE3

    Si2324DS-T1-GE3 thumbnail
    The Vishay Siliconix Si2324DS is a high-performance N-Channel MOSFET designed for applications requiring efficient switching and power management. This component, housed in a compact TO-236 (SOT-23) package, features a drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of up to 2.3A at 25°C. The Si2324DS offers low on-resistance (R_DS(on)) values of 0.234Ω at a gate-source voltage (V_GS) of 10V, ensuring minimal power loss and high efficiency. With a typical gate charge (Q_g) of 2.9nC, it is suitable for high-speed switching applications. The MOSFET is fully Rg and UIS tested, ensuring reliability and robustness in demanding environments. This component is ideal for use in DC/DC converters, load switches, and LED backlighting in LCD TVs, making it a versatile choice for various power management applications. The Si2324DS is lead-free, halogen-free, and RoHS compliant, aligning with environmental and safety standards.

    Properties

    2.9

    nC

    5

    A

    1.4

    nC

    20

    V

    100

    V

    2.5

    W

    13

    pF

    2.0

    S

    2.8

    Ω

    1.2

    V

    21

    nC

    100

    V

    2.8

    V

    2.3

    A

    150

    °C

    -55

    °C

    1.00

    mm

    40 - 50

    °C/W

    TO-236AB

    190

    pF

    2.0

    V

    0.8

    V

    /Users/jbreid/Desktop/Jonny5_Test_Set/NFET/SI2324DS-T1-GE3.pdf

    Q

    22

    pF

    0.75

    nC

    Vishay Siliconix

    Si2324DS-T1-GE3

    TO-236

    FET

    Pricing & Availability

    Distributor

    Qty 1

    Controls