jbreidfjord-dev / PJC831K_R1_000A1 1d51

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    PJC831K_R1_000A1 1d51

    PJC831K_R1_000A1 1d51 thumbnail
    The PAN JIT SEMI CONDUCTOR PJC831K is a 50V N-Channel Enhancement Mode MOSFET designed for high-efficiency switching applications. Featuring advanced trench process technology, this component is optimized for switch load and PWM applications and offers ESD protection up to 2KV HBM. The PJC831K, housed in a compact SOT-323 package, supports a maximum continuous drain current of 360 mA and can handle pulsed currents up to 1200 mA. Key electrical characteristics include a drain-source breakdown voltage of 50V, gate threshold voltage ranging from 0.8V to 1.5V, and a maximum RDS(on) of 1.6Ω at VGS=10V and ID=500mA. It also boasts low gate charge and capacitance values, ensuring fast switching performance. The component complies with EU RoHS 2.0 standards and utilizes a green molding compound per IEC 61249 standards, making it an environmentally friendly choice for various electronic designs.

    Properties

    0.6

    nC

    1200

    mA

    0.25

    nC

    530

    °C/W

    20

    V

    50

    V

    236

    mW

    2.5

    pF

    0.8

    V

    50

    V

    1.5

    V

    360

    mA

    150

    C

    -55

    °C

    30

    pF

    1.0

    V

    0.9

    V

    /Users/jbreid/Desktop/Jonny5_Test_Set/NFET/PJC831K_R1_000A1.pdf

    Q

    10

    pF

    0.2

    nC

    PAN JIT SEMICONDUCTOR

    PJC831K_R1_000A1

    SOT-323

    FET

    Pricing & Availability

    Distributor

    Qty 1

    Controls

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