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    PB600BA 5eb1

    PB600BA 5eb1 thumbnail
    The NIKO-SEM PB600BA is an N-Channel Enhancement Mode Field Effect Transistor (FET) housed in a PDFN 2x2S package, designed for applications requiring high efficiency and low on-resistance. This halogen-free and lead-free component boasts a Drain-Source Voltage (V_DS) of 30V and a Gate-Source Voltage (V_GS) of ±20V. With a maximum continuous drain current of 9A at 25°C and a pulsed drain current capability of up to 27A, it is well-suited for high-current applications. The device features a low R_DS(on) of 12mΩ at V_GS = 10V, ensuring minimal power loss and heat generation. The PB600BA also exhibits excellent thermal performance with a junction-to-ambient thermal resistance (R_θJA) of 71.7°C/W. Additional characteristics include a gate threshold voltage (V_GS(th)) range of 1.3V to 2.5V, a total gate charge (Q_g) of 15nC at V_GS = 10V, and a maximum power dissipation of 1.7W at 25°C. This FET is ideal for use in power management, load switching, and other high-efficiency electronic circuits.

    Properties

    15

    nC

    27

    A

    3.6

    nC

    71.7

    °C/W

    20

    V

    30

    V

    1.7

    W

    74

    pF

    45

    S

    3.1

    Ω

    1.3

    V

    3

    nC

    30

    V

    2.5

    V

    9

    A

    150

    °C

    -55

    °C

    706

    pF

    1.7

    V

    1.1

    V

    /Users/jbreid/Desktop/Jonny5_Test_Set/NFET/PB600BA.pdf

    Q

    103

    pF

    2.6

    nC

    NIKO-SEM

    PB600BA

    PDFN 2x2S

    FET

    Pricing & Availability

    Distributor

    Qty 1

    Controls