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    NTMFS4C029NT1G

    NTMFS4C029NT1G thumbnail
    The NTMFS4C029N, manufactured by ON Semiconductor, is a high-performance, single N-channel MOSFET designed for power applications. This MOSFET features a low RDS(on) to minimize conduction losses, low capacitance to reduce driver losses, and an optimized gate charge to minimize switching losses. It is packaged in a compact SO-8 FL package, making it suitable for space-constrained designs. The component can handle a maximum drain-to-source voltage (VDSS) of 30 V and a continuous drain current (ID) of up to 46 A at 25°C. It is ideal for applications such as CPU power delivery and DC-DC converters. The NTMFS4C029N is Pb-free, halogen-free/BFR-free, and RoHS compliant, ensuring it meets modern environmental and safety standards.

    Properties

    1.5

    nC

    132

    A

    4.8

    nC

    165.9

    °C/W

    5.3

    °C/W

    20

    V

    23.6

    W

    162

    pF

    43

    S

    2.0

    Ω

    1.3

    V

    13.7

    nC

    30

    V

    2.2

    V

    46

    A

    150

    °C

    -55

    °C

    0.90 - 1.00

    mm

    5.3

    °C/W

    987

    pF

    1.3

    V

    0.80

    V

    /Users/jbreid/Desktop/Jonny5_Test_Set/NFET/NTMFS4C029NT1G.pdf

    Q

    574

    pF

    2.8

    nC

    ON Semiconductor

    NTMFS4C029NT1G

    DFN5x6, 1.27P (SO-8FL)

    FET

    Pricing & Availability

    Distributor

    Qty 1

    Controls