The Samsung K4B2G1646F is a 2Gb DDR3L SDRAM memory component designed for high-speed performance, offering data rates up to 1866Mb/sec/pin. Available in a 96-ball FBGA package and organized as 128Mb x 16 I/Os x 8 banks, it is optimized for use in various applications requiring efficient data storage and retrieval. The device supports both 1.35V (DDR3L) and 1.5V (standard DDR3) power supplies, ensuring compatibility with a wide range of system requirements. Key features include an 8-bit pre-fetch architecture, programmable CAS latency, on-die termination (ODT), and internal self-calibration through the ZQ pin. The component also adheres to JEDEC standards and is compliant with RoHS, ensuring it is free of lead and halogen. Suitable for commercial and industrial temperature ranges, the K4B2G1646F offers robust performance for various demanding applications.