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    BSS138DW-7-F

    BSS138DW-7-F thumbnail
    The BSS138DW, manufactured by Diodes Incorporated, is a dual N-channel enhancement mode field-effect transistor (MOSFET) designed for high efficiency power management applications. This component features a low on-state resistance (RDS(on)) of 3.5 ohms at VGS = 10V and can handle a maximum drain current (ID) of 200mA at an ambient temperature of 25°C. With a drain-source voltage (V(BR)DSS) of 50V, the BSS138DW is ideal for load switching applications. The MOSFET offers superior switching performance with low gate threshold voltage, low input capacitance, and fast switching speed. It is fully compliant with RoHS standards and is available in a SOT-363 package. The component is also available in an automotive-compliant version under the part number BSS138DWQ, meeting AEC-Q101 standards for high reliability.

    Properties

    800

    mA

    2.4

    nC

    625

    °C/W

    20

    V

    50

    V

    200

    mW

    8.0

    pF

    100

    mS

    0.5

    V

    50

    V

    1.5

    V

    200

    mA

    150

    C

    -55

    C

    SOT-363

    50

    pF

    1.2

    V

    /Users/jbreid/Desktop/Jonny5_Test_Set/NFET/BSS138DW-7-F.pdf

    Q

    25

    pF

    Diodes Incorporated

    BSS138DW-7-F

    SOT-363

    FET

    Pricing & Availability

    Distributor

    Qty 1

    Controls