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    APM2300CA ecgG

    APM2300CA ecgG thumbnail
    The Sinopower APM2300CA is a high-performance N-Channel Enhancement Mode MOSFET designed for efficient power management applications in notebook computers, portable equipment, and battery-powered systems. This MOSFET offers a drain-source voltage (VDSS) of 20V and a continuous drain current (ID) of 6A, providing reliable and rugged performance. Featuring a low R_DS(on) of 25mΩ at V_GS=10V, 32mΩ at V_GS=4.5V, 40mΩ at V_GS=2.5V, and 65mΩ at V_GS=1.8V, the APM2300CA ensures minimal power loss and high efficiency. The component is housed in a compact SOT-23 package, making it suitable for space-constrained applications. With a maximum junction temperature of 150°C and compliance with RoHS and halogen-free standards, the APM2300CA is an environmentally friendly choice that does not sacrifice performance. Other notable features include low gate charge and fast switching capabilities, making it ideal for rapid and efficient power conversion tasks.

    Properties

    12.3

    nC

    6

    A

    6

    A

    U

    20

    V

    25

    m

    25

    5-10

    8

    nC

    430

    Sinopower Semiconductor, Inc.

    SOT-23

    APM2300CA

    -55

    °C

    A

    FET

    0.83

    W

    30

    planar

    12

    V

    20

    V

    11.8

    nC

    11.3

    nC

    10.8

    nC

    10.1

    nC

    9.6

    nC

    9.0

    nC

    8.5

    nC

    7.9

    nC

    7.4

    nC

    6.8

    nC

    6

    nC

    5.7

    nC

    5.2

    nC

    4.7

    nC

    2.4

    nC

    2.8

    nC

    25

    25.5

    26.0

    26.4

    26.9

    27.3

    27.9

    28.5

    29.1

    29.8

    30.5

    32

    32.9

    34.1

    36.7

    40

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