LM5100A Gate Driver Specifications
Table
| Parameter | Value | Conditions/Notes |
|---|---|---|
| Function | High-side and low-side N-channel MOSFET gate driver | Synchronous buck or half-bridge |
| Peak gate drive current | 3 A (A versions) | “A” grade provides full 3 A; B = 2 A, C = 1 A |
| Supply (VDD) – recommended | 9 V to 14 V | Recommended operating conditions |
| VDD absolute max | −0.3 V to 18 V | Absolute maximum ratings |
| High-side floating supply (HB−HS) | up to 18 V | Operating/limit per table |
| Switch node (HS) operating range | −5 V to 100 V (to VSS) | Operating range |
| Propagation delay (turn-on/turn-off) | 24 ns typ, 45 ns max | HI/LI to HO/LO |
| Output rise/fall time | 8 ns (typ) at CL = 1000 pF | Switching characteristics |
| Minimum input pulse width | 50 ns typ | Pulse that changes output |
| UVLO VDD (rising) | 6.9 V typ (6.0 to 7.4 V) | Hysteresis 0.5 V |
| UVLO HB (rising) | 6.6 V typ (5.7 to 7.1 V) | Hysteresis 0.4 V |
| Logic input threshold (LM5100A) | Rising: 4.5 V min, 5.4 V typ, 6.3 V max | CMOS-level inputs (HI, LI) |
| VDD quiescent current | 0.1 mA typ (LM5100A/B/C) | LI = HI = 0 V, 25 C |
| Operating temperature | −40 C to 125 C (junction) | |
| Package | SOIC-8, 3.91 mm × 4.90 mm (nom) | Also other package options exist |
| Integrated bootstrap diode | Yes | Datasheet feature |
| High-voltage capability (feature) | Bootstrap supply voltage up to 118 V DC | Per features list wording |
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