Pin Function Grouping
Worked for 46 sec
2 days
Done — I grouped all 25 DRV8770RGER pins by function using the datasheet-style roles, with each physical pin assigned to exactly one Pin Group.
Groups applied:
- Power: GVDD
- Ground: GND, EP
- Control Inputs: INLA, INLB, MODE, DT, INHA, INHB
- Gate Drive A: BSTA, GHA, SHA, GLA
- Gate Drive B: BSTB, GHB, SHB, GLB
- Reserved / No Connect: NC_1, NC_2, RSVD1–RSVD6
I verified the schematic properties after the update.
2 days
-
Make the functional group more general.
-
Add a Section property to all pins, and apply the same value used in the Pin Group property to each pin's Section property
Thought for 6 sec
2 days
I’ll generalize the pin group names and mirror each pin’s final Pin Group into its Section property.
Worked for 34 sec
2 days
Done — I generalized the functional groups and added Section to every pin with the same value as Pin Group.
Final groups are:
- Power
- Ground
- Control
- Gate Drive
- Reserved
I verified all 25 terminals now have both properties populated consistently.
Verify and document
Verify against datasheet
Run component review
Document pin table
Check footprint mapping
Reviews
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DRV8770RGER
Half Bridge (2) Driver DC Motors, General Purpose NMOS, Power MOSFET 24-VQFN (4x4)
The DRV8770RGER is a high-voltage brushed DC motor gate driver integrated circuit manufactured by Texas Instruments, designed to drive external N-channel power MOSFETs configured in a dual half-bridge topology for use in brushed DC motor control, stepper motor drive, solenoid actuation, and other inductive load switching applications. Rather than integrating the power stage transistors directly within the IC, the DRV8770 functions as a gate driver, providing the gate voltage and current needed to fully and rapidly switch external discrete power MOSFETs, which allows the designer to choose power devices appropriate to the specific voltage and current requirements of their motor or load without being constrained by the internal power stage of an integrated motor driver.
The DRV8770 delivers two half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The integrated bootstrap diode and external capacitor generate the correct gate drive voltages for the high-side MOSFETs, while the GVDD rail drives the gates of the low-side MOSFETs. This bootstrap architecture eliminates the need for an external isolated gate drive power supply for the high-side switch, simplifying the overall power stage design significantly compared to approaches that require separate high-side power supply generation. This device decreases system component count, reduces PCB area, and saves cost by integrating two independent half-bridge gate drivers and bootstrap diodes. digikeyTME
The high-side and low-side gate drivers can drive source and sink currents sufficient for fast, efficient switching of external power MOSFETs, with total average output current capability defined in the datasheet. The asymmetric source and sink current capability is a deliberate design choice reflecting the typical requirements of power MOSFET switching, where rapid turn-off is often more critical than turn-on speed for preventing shoot-through and managing switching losses in bridge circuits. Small propagation delay and delay matching specifications minimize the dead-time requirement, which further improves efficiency. TMEFarnell
The high voltage tolerance of the gate drive pins improves system robustness. The SHx phase pins can tolerate significant negative voltage transients, while the high-side gate driver supply can support higher positive voltage transients on the BSTx and GHx pins. This enhanced transient tolerance is essential in motor drive applications where inductive switching generates voltage spikes and negative voltage excursions on the switch node that would damage less robust gate driver designs. An input deglitcher prevents high-frequency noise on the input pins from affecting the output state of the gate drivers, protecting against inadvertent switching caused by electrical noise on the control interface lines. FarnellAllDataSheet
The device can drive one or two DC brush motors, one stepper motor, solenoids, or other inductive loads. This versatility makes it suitable across a broad range of actuator types within the same hardware platform, allowing a single PCB design to serve multiple product variants by simply changing the connected load and the firmware control scheme. Undervoltage protection is provided for both low-side and high-side through GVDD and BST undervoltage lockout, preventing the external power MOSFETs from operating with insufficient gate drive voltage, which would cause them to enter a linear operating region with excessive power dissipation and potential thermal damage. digikeyFarnell
The DRV8770RGER is housed in a compact VQFN twenty-four-pin surface-mount package, suited to space-constrained motor drive PCB layouts, and is rated for operation across an extended industrial temperature range.
Spec Sheet
Identification
Part Number: DRV8770RGER
Device Family: DRV8770
Manufacturer: Texas Instruments
Functional Classification
Device Type: Dual half-bridge N-channel MOSFET gate driver IC
Topology: Two independent half-bridge gate drivers
Application Class: Brushed DC motor, stepper motor, solenoid, and inductive load drive
Gate Drive Architecture
High-Side Driver: Bootstrap-based gate drive with integrated bootstrap diode
Low-Side Driver: GVDD-referenced direct gate drive
Gate Drive Current — Source: High source current capability for rapid MOSFET turn-on
Gate Drive Current — Sink: Higher sink current capability for rapid MOSFET turn-off
Voltage Ratings
Maximum Operating Voltage: High-voltage class, suited to industrial motor supply rails
Phase Pin Transient Tolerance: Rated for negative voltage transients on SHx switch node pins
Bootstrap Pin Transient Tolerance: Elevated absolute maximum on BSTx and GHx pins for spike immunity
Timing & Switching Performance
Propagation Delay: Small and tightly specified for minimal dead-time requirement
Delay Matching: High-side to low-side delay matching for improved bridge efficiency
Input Deglitching: Built-in input deglitch filter to suppress high-frequency noise on control inputs
Protection Features
GVDD Undervoltage Lockout: Protects low-side gate drive from insufficient supply
BST Undervoltage Lockout: Protects high-side gate drive from insufficient bootstrap voltage
Negative Transient Tolerance: Phase pins rated for switch-node negative voltage excursions
Load Compatibility
Supported Load Types: Brushed DC motors, stepper motors, solenoids, and general inductive loads
Drive Configurations: Single or dual brushed DC motor, single stepper motor, or independent half-bridge loads
Environmental & Qualification
Operating Temperature Range: Extended industrial temperature range
RoHS Compliance: Yes
Lifecycle Status: Active production
Package
Package Type: VQFN — Very thin Quad Flat No-Lead, twenty-four-pin
Package Suffix: RGER designation
Mounting Method: Surface mount technology (SMT)
Package Pitch: Fine pitch, compact footprint
Packaging Format
Supply Format: Tape-and-reel, cut-tape, and custom reel options available
#DRV8770 #DRV8770RGER #TexasInstruments #GateDriver #HalfBridgeDriver #BrushedDCMotor #MotorDriver #StepperMotorDriver #SolenoidDriver #NChannelMOSFET #BootstrapDriver #HighVoltageDriver #PowerElectronics #MotorControl #InductiveLoad #VQFN #SurfaceMount #SemiconductorIC #EngineeringSpec #ComponentLibrary #CommonPartsLibrary #RoHSCompliant #IndustrialMotorDrive
Properties
DRV8770RGER
Texas Instruments
Integrated Circuit
IC
24-VQFN
parametric-v1
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