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Documents

    Documents are markdown text files which describe project goals, capture details, or even simulation outputs.

    Assets

    kicad_mod

    TO-220AB.kicad_mod

    F_TO-220ABFootprint
    TO-220AB-thumb.png

    TO-220AB-thumb.png

    TO-220AB-thumb
    step

    TO-220AB.STEP

    3D_TO-220AB3D Model
    igbt-n-diode

    igbt-n-diode

    igbt-n-diodeDefault

    IKP20N65H5

    IKP20N65H5 thumbnail
    The Infineon IKP20N65H5 is a high-speed switching IGBT from the TRENCHSTOP™ 5 series, designed for efficient operation in hard switching and resonant topologies. This component is rated for a collector-emitter voltage of 650V and integrates a RAPID 1 fast and soft anti-parallel diode for improved performance. With a collector current rating of 20A at 25°C and a maximum junction temperature of 175°C, it offers best-in-class efficiency and is a plug-and-play replacement for previous generation IGBTs. The IKP20N65H5 is optimized for applications such as solar converters, uninterruptible power supplies, welding converters, and mid to high range switching frequency converters. Its package is the PG-TO220-3, featuring a low collector-emitter saturation voltage of 1.65V at 25°C, and it is qualified according to JEDEC standards for target applications. Additionally, it is RoHS compliant and designed with Pb-free lead plating, highlighting Infineon's commitment to environmental sustainability. This IGBT is characterized by its low gate charge and high transconductance, making it suitable for high-efficiency and high-speed switching applications.

    Properties

    Q

    Insulated-Gate Bipolar Transistor

    IKP20N65H5

    Infineon Technologies

    RoHS,JEDEC,Halogen-Free,Pb-free lead plating,Green

    TO-220AB

    Pricing & Availability

    Distributor

    Qty 1

    Controls