This project is a reference design based on the BQ25890, a single cell Li-Ion battery charger. It manages the power between an external power source (VIN), a Li-Ion battery (BAT), and a system power rail (SYS). Key features include power-path management, battery thermistor monitoring, and charge status indication. #project #BQ25890 #ReferenceDesign #charger #BatteryManagement #referenceDesign #bms #texas-instruments #template #reference-design #polygon

Brave is a versatile and efficient power board that can provide 12v, 5v and 3.3v outputs for various applications. It can be powered by battery or solar panel, and the battery can be recharged by solar energy. It can also be powered by a USB port if needed. This board is ideal for IoT projects that require reliable and stable power supply in different environments. #IoT #power #management #usb

The AON7292 from Alpha & Omega Semiconductor is a high-performance, 100V N-Channel MOSFET utilizing the latest Trench Power AlphaMOS (aMOS MV) technology. This component is optimized for fast-switching applications and features very low RDS(ON) values, with <24mΩ at VGS=10V and <32mΩ at VGS=4.5V, making it ideal for synchronous rectification in DC/DC and AC/DC converters, as well as isolated DC/DC converters in telecom and industrial applications. The AON7292 is housed in a compact DFN 3.3×3.3 package and complies with RoHS and Halogen-Free standards. Key specifications include a continuous drain current of 23A at Tc=25°C, a pulsed drain current of 45A, and a maximum power dissipation of 28W at Tc=25°C. The component also boasts low gate charge characteristics, with a total gate charge of 17nC at VGS=10V, ensuring efficient operation in high-speed switching environments. Additionally, it has been rigorously tested for Unclamped Inductive Switching (UIS) and gate resistance, ensuring reliability and performance in demanding applications.

The NTTFS4C05N is an advanced N-Channel MOSFET designed by ON Semiconductor, optimized for high-efficiency power management applications. This MOSFET features a low RDS(on) to minimize conduction losses, low capacitance to reduce driver losses, and an optimized gate charge for minimal switching losses. It operates at a maximum drain-to-source voltage (VDSS) of 30V and can handle continuous drain currents up to 75A. The device is available in a compact WDFN8 package and is suitable for use in DC-DC converters, power load switches, and notebook battery management systems. The component is Pb-Free, Halogen Free/BFR Free, and RoHS compliant, ensuring it meets global environmental standards. Additionally, the NTTFS4C05N offers robust performance with a maximum power dissipation of 33W at a case temperature of 25°C, and it can withstand pulsed drain currents up to 174A. It also features a gate threshold voltage range of 1.3V to 2.2V and boasts fast switching characteristics with turn-on and turn-off delay times as low as 2ns and 8ns, respectively.

This project is a reference design based on the ISL6292, a single cell Li-Ion battery charger. It manages the power between an external power source (VIN), a Li-Ion battery (BAT), and a system power rail (SYS). Key features include power-path management, battery thermistor monitoring, and charge status indication. #project #ISL6292 #ReferenceDesign #charger #BatteryManagement #referenceDesign #bms #renesas #template #reference-design #polygon

This project is a reference design based on the BQ25895, a single cell Li-Ion battery charger. It manages the power between an external power source (VIN), a Li-Ion battery (BAT), and a system power rail (SYS). Key features include power-path management, battery thermistor monitoring, and charge status indication. #project #BQ25895 #ReferenceDesign #charger #BatteryManagemen #referenceDesign #bms #texas-instruments #template #reference-design

The EMF30N02J from Excelliance MOS Corporation is an N-Channel Logic Level Enhancement Mode Field Effect Transistor designed for high efficiency and performance in a compact SOT-23 package. With a maximum Drain-Source voltage (BVDSS) of 20V and a maximum Drain current (ID) of 5A at 25°C, this MOSFET is ideal for low-voltage switching applications. It features a low maximum Drain-Source On-State Resistance (RDSON) of 30mΩ at a Gate-Source voltage (VGS) of 4.5V, ensuring minimal power dissipation. The component supports a Gate-Source voltage (VGS) up to +12V and operates within a temperature range of -55°C to 150°C. The EMF30N02J is also Pb-Free, Halogen-Free, and classified as a GP Green Product, making it environmentally friendly. Key electrical characteristics include a Gate Threshold Voltage (VGS(th)) between 0.45V and 1.2V, a maximum Gate-Body Leakage (IGSS) of 100nA, and a typical Forward Transconductance (gfs) of 7S. Additionally, the MOSFET exhibits excellent dynamic performance with a total Gate Charge (Qg) of 6.2nC, making it suitable for high-speed switching applications. The thermal resistance is rated at 100°C/W from junction-to-ambient and 55°C/W from junction-to-lead, ensuring efficient thermal management.

The PAN JIT SEMI CONDUCTOR PJC831K is a 50V N-Channel Enhancement Mode MOSFET designed for high-efficiency switching applications. Featuring advanced trench process technology, this component is optimized for switch load and PWM applications and offers ESD protection up to 2KV HBM. The PJC831K, housed in a compact SOT-323 package, supports a maximum continuous drain current of 360 mA and can handle pulsed currents up to 1200 mA. Key electrical characteristics include a drain-source breakdown voltage of 50V, gate threshold voltage ranging from 0.8V to 1.5V, and a maximum RDS(on) of 1.6Ω at VGS=10V and ID=500mA. It also boasts low gate charge and capacitance values, ensuring fast switching performance. The component complies with EU RoHS 2.0 standards and utilizes a green molding compound per IEC 61249 standards, making it an environmentally friendly choice for various electronic designs.

The NIKO-SEM PB600BA is an N-Channel Enhancement Mode Field Effect Transistor (FET) housed in a PDFN 2x2S package, designed for applications requiring high efficiency and low on-resistance. This halogen-free and lead-free component boasts a Drain-Source Voltage (V_DS) of 30V and a Gate-Source Voltage (V_GS) of ±20V. With a maximum continuous drain current of 9A at 25°C and a pulsed drain current capability of up to 27A, it is well-suited for high-current applications. The device features a low R_DS(on) of 12mΩ at V_GS = 10V, ensuring minimal power loss and heat generation. The PB600BA also exhibits excellent thermal performance with a junction-to-ambient thermal resistance (R_θJA) of 71.7°C/W. Additional characteristics include a gate threshold voltage (V_GS(th)) range of 1.3V to 2.5V, a total gate charge (Q_g) of 15nC at V_GS = 10V, and a maximum power dissipation of 1.7W at 25°C. This FET is ideal for use in power management, load switching, and other high-efficiency electronic circuits.

The Sinopower APM2300CA is a high-performance N-Channel Enhancement Mode MOSFET designed for efficient power management applications in notebook computers, portable equipment, and battery-powered systems. This MOSFET offers a drain-source voltage (VDSS) of 20V and a continuous drain current (ID) of 6A, providing reliable and rugged performance. Featuring a low R_DS(on) of 25mΩ at V_GS=10V, 32mΩ at V_GS=4.5V, 40mΩ at V_GS=2.5V, and 65mΩ at V_GS=1.8V, the APM2300CA ensures minimal power loss and high efficiency. The component is housed in a compact SOT-23 package, making it suitable for space-constrained applications. With a maximum junction temperature of 150°C and compliance with RoHS and halogen-free standards, the APM2300CA is an environmentally friendly choice that does not sacrifice performance. Other notable features include low gate charge and fast switching capabilities, making it ideal for rapid and efficient power conversion tasks.

3.7V Lipo Charger. Interfaces with MT3608 Boost Converter to convert 3.7V to 5V. Slot on top of your Arduino and charge your battery while the Arduino is plugged in. Or run your Arduino portably using the battery.

Fully-Integrated Bi-directional PD3.0 and Fast Charge Power Bank SOC with Multiple Input and Output Ports based on IP5328P

The NTS4001N and NVS4001N are single N-Channel, small signal MOSFETs from ON Semiconductor, housed in a compact SC-70/SOT-323 package. These components are designed for applications requiring efficient low-side load switching, such as Li-Ion battery-supplied devices including cell phones, PDAs, and digital still cameras, as well as for use in buck converters and level shifters. Featuring a maximum drain-to-source voltage (VDSS) of 30 V and a continuous drain current (ID) of 270 mA at 25°C, these MOSFETs are optimized for fast switching with low gate charge. The gate-to-source voltage (VGS) can withstand up to ±20 V, and the devices are ESD protected and AEC-Q101 qualified, making them suitable for automotive applications. The NTS4001N and NVS4001N are also Pb-Free and RoHS compliant, ensuring environmental compliance. With a typical RDS(on) of 1.0 Ω at VGS = 4.0 V and 1.5 Ω at VGS = 2.5 V, these MOSFETs offer reliable performance in a small footprint, 30% smaller than the TSOP-6 package.

This project is a reference design based on the BQ24230, a single cell Li-Ion battery charger. It manages the power between an external power source (VIN), a Li-Ion battery (BAT), and a system power rail (SYS). Key features include power-path management, battery thermistor monitoring, and charge status indication. #project #BQ24230 #ReferenceDesign #charger #BatteryManagement #referenceDesign #bms #texas-instruments #template #reference-design #polygon .

The NTMFS4C024N is a high-performance N-Channel MOSFET manufactured by ON Semiconductor, designed for power applications such as CPU power delivery and DC-DC converters. This single MOSFET, housed in a SO-8 FL package, boasts a maximum drain-to-source voltage (VDSS) of 30 V and can handle continuous drain currents up to 78 A at 25°C. It features exceptionally low RDS(on) values of 2.8 mΩ at 10 V and 4.0 mΩ at 4.5 V, which minimizes conduction losses. Additionally, the device is optimized for low gate charge and capacitance to reduce driver and switching losses, enhancing overall efficiency. The NTMFS4C024N is Pb-Free, Halogen Free/BFR Free, and RoHS compliant, ensuring it meets modern environmental standards. With a maximum power dissipation of 33 W and thermal resistance junction-to-case of 3.8°C/W, it is well-suited for high-power applications requiring robust thermal performance.

This project is a Lithium-ion battery charger circuit utilizing the MCP73831 integrated circuit. It includes input and output connectors, a charging current programming resistor, decoupling capacitors, and a charge status indicator LED. The design can deliver up to 500mA charge current. #project #Template #charger #referenceDesign #batterycharger #template #bms #microchip

The NTMFS4C03N, manufactured by ON Semiconductor, is a high-performance, single N-Channel MOSFET designed for power applications. Encased in a compact SO-8FL package, this component offers a maximum drain-to-source voltage (VDSS) of 30V and a continuous drain current (ID) of up to 136A at 25°C. With an exceptionally low RDS(on) of 2.1 mΩ at VGS of 10V, it minimizes conduction losses, making it ideal for high-efficiency power management. Additionally, the MOSFET features low gate charge (QG) and capacitance, reducing driver losses and enhancing overall system efficiency. The device is Pb-Free, Halogen Free/BFR Free, and RoHS compliant, ensuring adherence to environmental standards. It also boasts a robust thermal performance with a junction-to-case thermal resistance (RθJC) of 1.95°C/W, making it suitable for applications requiring efficient heat dissipation. The NTMFS4C03N is available in tape and reel packaging options, accommodating various manufacturing needs.

The AO3422 from Alpha & Omega Semiconductor is a high-performance, N-Channel Enhancement Mode Field Effect Transistor (FET) that leverages advanced trench technology to achieve outstanding RDS(ON) and low gate charge. Designed for efficient power conversion and load switching applications, this component operates effectively across a wide gate drive range of 2.5V to 12V. The AO3422 is characterized by a drain-source voltage (VDS) of 55V and a continuous drain current (ID) of 2.1A at a gate-source voltage (VGS) of 4.5V. Its RDS(ON) is impressively low, coming in at less than 160mΩ at VGS of 4.5V, making it suitable for a variety of power management tasks. The device is encapsulated in a compact SOT23 package, offering a robust solution for space-constrained applications. Additional features include a maximum junction temperature of 150°C, high forward transconductance, and fast switching characteristics that support efficient and reliable operation in high-performance circuit designs.

The AO3414, manufactured by Alpha & Omega Semiconductor, is an N-Channel Enhancement Mode Field Effect Transistor (FET) designed using advanced trench technology to deliver superior RDS(ON), low gate charge, and operation with gate voltages as low as 1.8V. Ideal for load switch and PWM applications, the AO3414 is available in a Pb-free version that complies with ROHS and Sony 259 specifications, and a Green Product variant (AO3414L), both of which are electrically identical. Key specifications include a drain-source voltage (VDS) of 20V, a continuous drain current (ID) of 4.2A at VGS=4.5V, and a maximum RDS(ON) of 50mΩ at VGS=4.5V. The device is housed in a TO-236 (SOT-23) package, ensuring compact and efficient thermal performance. Additionally, the AO3414 boasts a maximum power dissipation of 1.4W at TA=25°C, a gate-source voltage (VGS) rating of +8V, and an operating junction temperature range of -55°C to 150°C. This component is optimized for consumer market applications, offering reliable performance and compliance with environmental standards.

The APM2300CA, manufactured by Sinopower Semiconductor, is an N-Channel Enhancement Mode MOSFET designed for power management applications in notebook computers, portable equipment, and battery-powered systems. This component features a drain-source voltage (VDSS) rating of 20V and can handle continuous drain currents up to 6A, with a typical RDS(ON) of 25mΩ when VGS is 10V, and various resistance levels at lower gate voltages. The MOSFET exhibits excellent reliability and ruggedness, compliant with RoHS and available in lead-free and halogen-free (Green) versions. Housed in a compact SOT-23 package, the APM2300CA operates across a junction temperature range of -55°C to 150°C, making it suitable for high-efficiency power management applications. Key performance characteristics include low gate charge, excellent switching times, and low gate resistance, which facilitate efficient operation in fast-switching environments.

Brave is a versatile and efficient power board that can provide 12v, 5v and 3.3v outputs for various applications. It can be powered by battery or solar panel, and the battery can be recharged by solar energy. It can also be powered by a USB port if needed. This board is ideal for IoT projects that require reliable and stable power supply in different environments. #IoT #power #management #usb

This project is a Lithium-ion battery charger circuit utilizing the MCP73831 integrated circuit. It includes input and output connectors, a charging current programming resistor, decoupling capacitors, and a charge status indicator LED. The design can deliver up to 500mA charge current. #project #Template #charger #referenceDesign #batterycharger #template #bms #microchip

The Vishay Siliconix Si2324DS is a high-performance N-Channel MOSFET designed for applications requiring efficient switching and power management. This component, housed in a compact TO-236 (SOT-23) package, features a drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of up to 2.3A at 25°C. The Si2324DS offers low on-resistance (R_DS(on)) values of 0.234Ω at a gate-source voltage (V_GS) of 10V, ensuring minimal power loss and high efficiency. With a typical gate charge (Q_g) of 2.9nC, it is suitable for high-speed switching applications. The MOSFET is fully Rg and UIS tested, ensuring reliability and robustness in demanding environments. This component is ideal for use in DC/DC converters, load switches, and LED backlighting in LCD TVs, making it a versatile choice for various power management applications. The Si2324DS is lead-free, halogen-free, and RoHS compliant, aligning with environmental and safety standards.

The HY2213 series, developed and manufactured by HYCON Technology Corp., presents a high-precision, energy-efficient battery charge balance integrated circuit (IC) specifically designed for single-cell lithium-ion or lithium-polymer batteries. This component encompasses a wide range of features tailored for multi-cell Li-ion rechargeable battery packs applications, including a high-precision voltage detection circuit capable of monitoring overcharge situations with a detection voltage range between 4.000V and 4.500V. Its unique design allows for delay times generated internally, eliminating the need for external capacitors and reducing the overall component count. Operating with a remarkably low consumption current in both operation (Typ. value 2.5uA, Max. value 3.5uA at VDD=3.9V) and standby modes (Max. value 0.5uA at VDD=2.7V), the HY2213 series is designed for energy-sensitive applications. It also offers versatility in operation temperature, ranging from -40℃ to +85℃, and comes in a compact SOT-23-6 package, making it suitable for space-constrained applications. The HY2213 series underscores HYCON Technology Corp.'s commitment to advancing battery management solutions by integrating overcharge detection and release, standby detection, and charge balance functionality into a single, efficient, and easy-to-use IC.

The ATtiny45/85 USB Phone Charge Guard regulates charging by monitoring voltage, current, power, and energy, protecting Li-ion batteries.