# TP65H070G4PS (Component) ## Description N-Channel 650 V 29A (Tc) 96W (Tc) Through Hole TO-220AB 650 V GaN FET for high-efficiency power switching applications. Rated for 650 V drain-to-source voltage (VDS) with 70 mΩ typical RDS(on), it supports 41 A continuous drain current (TC = 25°C). The device features a normally-off (enhancement-mode) GaN HEMT, ±20 V gate-source voltage rating, and is housed in a TO-220 package (4-lead, Kelvin source) for improved gate drive performance. #GaNFET #EnhancementMode #650V #70mOhm #41A #PowerTransistor #TO220 #KelvinSource #Renesas #PowerElectronics ## Component Details - **Owner:** silicon-yard - **Created:** 7/2/2026 - **Last Updated:** 7/2/2026 - **Visibility:** Public - **Mount:** Reverse - **License:** https://creativecommons.org/licenses/by/4.0/ - **Implementation Details:** Datasheet URL: https://www.renesas.com/en/document/dst/tp65h070g4ps-datasheet?r=25565399 - **Manufacturer Name:** Renesas Electronics Corporation - **Package or Case Code:** 220-TO - **Datasheet URL:** https://storage.googleapis.com/graviton-electric-symbols/document_assets/user-uploaded/802c7f908f897e8c7c18fd89d840e0381ad12b544424ff944dd6a612c8c97579.pdf - **Part Type:** Transistors - **Manufacturer Part Number:** TP65H070G4PS - **Used in:** 5 projects ## Distributor Pricing (qty 1) *Pricing shown for quantity 1. For price breaks and other quantities, open in Flux.* | Distributor | Unit Price (qty 1) | Stock | |------------|--------------------|-------| | [Mouser](https://www.mouser.com/en/ProductDetail/Renesas-Electronics/TP65H070G4PS?qs=ulEaXIWI0c94%252BPmd6%252Bn24w%3D%3D) | $8.42 | 858 | - **Part Type:** Transistors - **Sub-Type:** Other - **Manufacturer:** Renesas - **MPN:** TP65H070G4PS - **Mount Type:** Reverse - **Package / Case Code:** 220-TO - **Pin Count:** 3 ## Pins | Pin | Name | Type | |-----|------|------| | 1 | G | | | 2 | S | | | 3 | D | | --- *Generated from [https://www.flux.ai/silicon-yard/tp65h070g4ps](https://www.flux.ai/silicon-yard/tp65h070g4ps)*