# DXT5551P5-13 (Component)
## Description
NPN Bipolar Junction Transistor (BJT) – High-voltage NPN transistor for general-purpose switching and amplification, featuring a 160 V collector-emitter breakdown voltage, 600 mA maximum collector current, and 2.25 W power dissipation. Provides a 130 MHz transition frequency, minimum DC current gain (hFE) of 80 at 10 mA, and 200 mV maximum collector-emitter saturation voltage at 50 mA collector current. Specified for operation over a −55°C to +150°C junction temperature range and housed in a PowerDI™ 5 surface-mount package.
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## Component Details
- **Owner:** silicon-yard
- **Created:** 7/13/2026
- **Last Updated:** 7/13/2026
- **Visibility:** Public
- **Manufacturer Name:** Diodes
- **Datasheet URL:** https://storage.googleapis.com/graviton-electric-symbols/document_assets/user-uploaded/85e2e528d712c09a8df5cc2240af0f4d55fc103f35938a5dfa7da12ce726f48a.pdf
- **Manufacturer Part Number:** DXT5551P5-13
- **Part Type:** Transistors
- **Used in:** 1 project
## Distributor Pricing (qty 1)
*Pricing shown for quantity 1. For price breaks and other quantities, open in Flux.*
| Distributor | Unit Price (qty 1) | Stock |
|------------|--------------------|-------|
| [Arrow](https://www.arrow.com/en/products/dxt5551p5-13/diodes-incorporated.html?utm_currency=USD®ion=nac) | $0.6947 | 5K |
| [LCSC](https://www.lcsc.com/product-detail/C5260571.html) | N/A | N/A |
| [Mouser](https://www.mouser.com/en/ProductDetail/Diodes-Incorporated/DXT5551P5-13?qs=pmB%252BthhaMeURGx362MbdPw%3D%3D) | $0.92 | 8.7K |
- **Part Type:** Transistors
- **Sub-Type:** NPN
- **Manufacturer:** Diodes
- **MPN:** DXT5551P5-13
- **Mount Type:** Surface Mount
- **Package / Case Code:** TO
- **Pin Count:** 3
## Pins
| Pin | Name | Type |
|-----|------|------|
| 1 | 1 | |
| 2 | 2 | |
| 3 | 3 | |
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*Generated from [https://www.flux.ai/silicon-yard/dxt5551p5-13](https://www.flux.ai/silicon-yard/dxt5551p5-13)*