# 6116LA90DB (Component) ## Description 5V low-power CMOS SRAM memory, organized as 2K x 8 bits, with 90 ns access time, TTL-compatible inputs/outputs, asynchronous static operation, standby low-power mode, and battery backup support. DIP-24 package. Keywords / Hashtags: 6116LA90DB, 6116LA-90DB, 6116 SRAM, 2Kx8 SRAM, 16Kbit SRAM, STK 6116 / 6116 SRAM DIP-24, CMOS SRAM, low power SRAM, 5V SRAM, asynchronous SRAM, DIP-24 SRAM, Renesas SRAM, #6116LA90DB #6116SRAM #CMOSSRAM #2Kx8SRAM #16KbitSRAM #LowPowerSRAM #5VSRAM #DIP24 #RenesasThe 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1uW to 4uW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. ## Component Details - **Owner:** silicon-yard - **Created:** 6/29/2026 - **Last Updated:** 6/29/2026 - **Visibility:** Public - **Package or Case Code:** TO - **Datasheet URL:** https://www.idt.com/eu/en/document/dst/6116sala-data-sheet - **Manufacturer Name:** Renesas - **Manufacturer Part Number:** 6116LA90DB - **Part Type:** Integrated Circuits - **Part Type:** Integrated Circuits - **Sub-Type:** Logic - **Manufacturer:** Renesas - **MPN:** 6116LA90DB - **Package / Case Code:** 24-DIP - **Pin Count:** 24 - **Logic Function:** AND ## Pins | Pin | Name | Type | |-----|------|------| | 1 | A7 | | | 2 | A6 | | | 3 | A5 | | | 4 | A4 | | | 5 | A3 | | | 6 | A2 | | | 7 | A1 | | | 8 | A0 | | | 9 | I/O0 | | | 10 | I/O1 | | | 11 | I/O2 | | | 12 | GND | | | 13 | I/O3 | | | 14 | I/O_4 | | | 15 | I/O5 | | | 16 | I/O6 | | | 17 | I/O7 | | | 18 | ~CS | | | 19 | A10 | | | 20 | ~OE | | | 21 | ~WE | | | 22 | A9 | | | 23 | A8 | | | 24 | VCC | | --- *Generated from [https://www.flux.ai/silicon-yard/6116la90db](https://www.flux.ai/silicon-yard/6116la90db)*