A generic fixed resistor ideal for rapid circuit topology development. Its footprint automatically adapts based on the selected package case code—supporting 0402, 0603, 0805, 1203, and many other standard SMD packages, as well as axial horizontal and vertical configurations. Save precious design time by seamlessly add more information to this part (value, footprint, etc.) as it becomes available. Standard resistor values: 1.0 ohm, 10 ohm, 100 ohm, 1.0k ohm, 10k ohm, 100k ohm, 1.0M ohm 1.1 ohm, 11 ohm, 110 ohm, 1.1k ohm, 11k ohm, 110k ohm, 1.1M ohm 1.2 ohm, 12 ohm, 120 ohm, 1.2k ohm, 12k ohm, 120k ohm, 1.2M ohm 1.3 ohm, 13 ohm, 130 ohm, 1.3k ohm, 13k ohm, 130k ohm, 1.3M ohm 1.5 ohm, 15 ohm, 150 ohm, 1.5k ohm, 15k ohm, 150k ohm, 1.5M ohm 1.6 ohm, 16 ohm, 160 ohm, 1.6k ohm, 16k ohm, 160k ohm, 1.6M ohm 1.8 ohm, 18 ohm, 180 ohm, 1.8K ohm, 18k ohm, 180k ohm, 1.8M ohm 2.0 ohm, 20 ohm, 200 ohm, 2.0k ohm, 20k ohm, 200k ohm, 2.0M ohm 2.2 ohm, 22 ohm, 220 ohm, 2.2k ohm, 22k ohm, 220k ohm, 2.2M ohm 2.4 ohm, 24 ohm, 240 ohm, 2.4k ohm, 24k ohm, 240k ohm, 2.4M ohm 2.7 ohm, 27 ohm, 270 ohm, 2.7k ohm, 27k ohm, 270k ohm, 2.7M ohm 3.0 ohm, 30 ohm, 300 ohm, 3.0K ohm, 30K ohm, 300K ohm, 3.0M ohm 3.3 ohm, 33 ohm, 330 ohm, 3.3k ohm, 33k ohm, 330k ohm, 3.3M ohm 3.6 ohm, 36 ohm, 360 ohm, 3.6k ohm, 36k ohm, 360k ohm, 3.6M ohm 3.9 ohm, 39 ohm, 390 ohm, 3.9k ohm, 39k ohm, 390k ohm, 3.9M ohm 4.3 ohm, 43 ohm, 430 ohm, 4.3k ohm, 43K ohm, 430K ohm, 4.3M ohm 4.7 ohm, 47 ohm, 470 ohm, 4.7k ohm, 47k ohm, 470k ohm, 4.7M ohm 5.1 ohm, 51 ohm, 510 ohm, 5.1k ohm, 51k ohm, 510k ohm, 5.1M ohm 5.6 ohm, 56 ohm, 560 ohm, 5.6k ohm, 56k ohm, 560k ohm, 5.6M ohm 6.2 ohm, 62 ohm, 620 ohm, 6.2k ohm, 62K ohm, 620K ohm, 6.2M ohm 6.8 ohm, 68 ohm, 680 ohm, 6.8k ohm, 68k ohm, 680k ohm, 6.8M ohm 7.5 ohm, 75 ohm, 750 ohm, 7.5k ohm, 75k ohm, 750k ohm, 7.5M ohm 8.2 ohm, 82 ohm, 820 ohm, 8.2k ohm, 82k ohm, 820k ohm, 8.2M ohm 9.1 ohm, 91 ohm, 910 ohm, 9.1k ohm, 91k ohm, 910k ohm, 9.1M ohm #generics #CommonPartsLibrary

Diseño PCB Bobina Espiral 20x20cm para Pirámide Energética ESPECIFICACIONES TÉCNICAS DEL PCB DIMENSIONES Y MATERIALES Tamaño: 200mm x 200mm Espesor: 1.6mm (estándar) Material: FR4 (fibra de vidrio) Capas: 2 capas (Top y Bottom) Acabado: HASL (Hot Air Solder Leveling) Máscara: Verde estándar Serigrafía: Blanca ESPECIFICACIONES DE COBRE Espesor: 2 oz (70 μm) - Para alta corriente Ancho de pista: 2.0mm Separación: 1.5mm entre pistas Vías: 0.8mm diámetro, 0.4mm taladro Corriente máxima: 3A por pista CÁLCULOS DE DISEÑO FÓRMULAS PARA BOBINA ESPIRAL PLANA Inductancia (μH) = (n² × d_avg² × μ0) / (18 × d_avg + 40 × w) Donde: - n = número de vueltas - d_avg = diámetro promedio (mm) - w = ancho total bobina (mm) - μ0 = permeabilidad del vacío CÁLCULOS ESPECÍFICOS Número de vueltas: 18 vueltas Radio interior: 15mm Radio exterior: 95mm Diámetro promedio: 110mm Inductancia calculada: ~180 μH Resistencia DC: ~0.8 Ω Capacitancia parásita: ~15 pF

The IPB017N10N5LF is a high-performance N-channel MOSFET from Infineon's OptiMOS™ 5 Linear FET series, designed specifically for hot-swap and e-fuse applications. This 100 V component, housed in a D2-PAK 7pin package (PG-TO 263-7), features exceptionally low on-resistance (RDS(on)) and a wide safe operating area (SOA), making it ideal for demanding power management tasks. The device is rated for a continuous drain current of up to 180 A (silicon limited) and 314 A (package limited), with a maximum pulsed drain current of 720 A. It supports gate-source voltages ranging from -20 V to 20 V and is 100% avalanche tested, ensuring robust performance under extreme conditions. The IPB017N10N5LF is RoHS compliant, Pb-free, and halogen-free, adhering to environmental standards. Key electrical characteristics include a maximum RDS(on) of 1.7 mΩ at VGS=10 V and a gate threshold voltage range of 2.5 V to 4.1 V. This MOSFET is suitable for applications requiring high efficiency and reliability, supported by its qualification according to JEDEC standards.

The Atmel® | SMART SAM9260, manufactured by Atmel, is an ARM-based Embedded Microprocessor Unit (MPU), integrating the ARM926EJ-STM processor operating at 180 MHz. This MPU includes substantial on-chip memory and extensive peripherals, including an Ethernet MAC, USB Device and Host Ports, along with various standard interfaces such as USART, SPI, TWI, Timer Counters, and MultiMedia Card Interface. Architected on a 6-layer matrix delivering a maximum internal bandwidth of six 32-bit buses, it supports external 32-bit bus interfaces for SDRAM, static memories, CompactFlash, and SLC NAND Flash with ECC. The SAM9260 is available in 217-ball LFBGA and 208-pin PQFP packages. Key features include 8 Kbytes each of data and instruction cache, integrated MMU, two internal 4-Kbyte SRAMs, a 32-Kbyte ROM with bootloader, 22 Peripheral DMA channels, various power-on reset modes, two programmable clock signals, advanced interrupt controller, and multiple power management options for optimized performance and energy efficiency.

The NTJD4001N and NVTJD4001N from ON Semiconductor are dual, N-channel MOSFETs designed for small signal applications. These components are optimized for low gate charge to enable fast switching speeds and are housed in a compact SC-88 package, which is noted to be 30% smaller than the TSOP-6, allowing for savings in PCB space. Both variants operate with a drain-to-source voltage (VDSS) of 30 V and can handle continuous drain currents of up to 250 mA at 25℃, reducing to 180 mA at 85℃. The devices are distinctive for their ESD protected gates and meet the AEC Q101 qualification criteria, making the NVTJD4001N version particularly suitable for automotive and high-reliability applications. With power dissipation cap of 272 mW at 25℃, these components are ideal for low-power applications like low-side load switches, Li-Ion battery-supplied devices, buck converters, and level shifts. They are furnished in a lead-free, RoHS-compliant package, assuring environmental consideration in both manufacturing and application use. ON Semiconductor emphasizes several key attributes of the NTJD4001N and NVTJD4001N, including their low gate charge feature, small footprint, and robust durability, marked by ESD protection and AEC Q101 qualification for the NVTJD4001N variation. These characteristics make these MOSFETs viable solutions for engineers focusing on optimizing space and power efficiency in their circuit designs, particularly in the realms of portable electronic devices, power management circuits, and various automotive applications.