The ON Semiconductor® FDMC86102LZ is an advanced N-Channel Shielded Gate PowerTrench MOSFET designed for high-efficiency DC-DC switching applications. Featuring Shielded Gate Technology, this MOSFET boasts a maximum drain-to-source voltage (VDS) of 100 V and a continuous drain current (ID) capability of up to 22 A at 25°C. The device exhibits low on-state resistance with a maximum rDS(on) of 24 mΩ at VGS = 10 V and ID = 6.5 A, and 35 mΩ at VGS = 4.5 V and ID = 5.5 A. It includes a gate-to-source zener diode for enhanced ESD protection, with a typical HBM ESD protection level greater than 6 kV. The FDMC86102LZ is RoHS compliant, 100% UIL tested, and offers superior switching performance due to its optimized PowerTrench® process. The component is packaged in a compact MLP 3.3×3.3 format, making it ideal for space-constrained designs. Its thermal characteristics include a junction-to-case thermal resistance (RθJC) of 3°C/W and a junction-to-ambient thermal resistance (RθJA) of 53°C/W when mounted on a 1 in² pad of 2 oz copper.

The DMN3016LFDF is an N-Channel Enhancement Mode MOSFET manufactured by Diodes Incorporated, designed for high-efficiency power management applications. This MOSFET features a low on-state resistance (RDS(ON)) of 12mΩ at VGS = 10V and 16mΩ at VGS = 4.5V, with a maximum drain current (ID) of 10A at TA = +25°C. The device operates with a drain-source voltage (BVDSS) of 30V and a gate-source voltage (VGSS) of +20V. It is ideally suited for battery management, power management functions, and DC-DC converters due to its superior switching performance and low gate threshold voltage. The component is housed in a U-DFN2020-6 (Type F) package with a 0.6mm profile, making it suitable for low-profile applications. It is also fully RoHS compliant, halogen and antimony-free, and qualified to JEDEC standards for high reliability.

This is a reference design of step-up dc-to-dc switching converter based ADP1613 with a 15V output #dcdc #power #boost #15V #referenceDesign #powermanagement #analogdevices #template #reference-design

This is a reference design of step-up dc-to-dc switching converter based ADP1613 with a 15V output #dcdc #power #boost #15V #referenceDesign #powermanagement #analogdevices #template #reference-design

TECHNICAL ASSIGNMENT AND DESIGN GUIDE Active Three-Way Crossover on NE5532 Powered by AM4T-4815DZ and Amplifiers TPA3255 (Updated Version) 1. GENERAL PURPOSE OF THE DEVICE The goal of the development is to create an active three-way audio crossover for one channel of a loudspeaker system, working with the following drivers: LF: VISATON W250 MF: VISATON MR130 HF: Morel MDT-12 Each frequency range is amplified by a separate power amplifier: LF: TPA3255 in PBTL mode (mono) MF + HF: second TPA3255 in stereo mode (one channel for MF, the other for HF) The crossover accepts a single linear audio signal (mono) and divides it into three frequency bands: Range Frequency Range LF 0 – 650 Hz MF 650 – 2500 Hz HF 2500 Hz and above Filter type: Linkwitz–Riley 4th order (24 dB/oct) at each crossover point (650 Hz and 2500 Hz). The crossover must provide: minimal self-noise; no audible distortion in the audible range; stable operation with NE5532 at ±15 V power supply; easy adjustment of the level for each band, as well as the overall level (via the input buffer). 2. FILTER TYPES AND BASIC OPERATING PRINCIPLES Each filter is implemented as two cascaded Sallen–Key 2nd order (Butterworth) stages, resulting in a final 4th order LR4 filter. Topology: non-inverting Sallen–Key, optimal for NE5532. For all stages: Cascade gain: K ≈ 1.586 This provides a Q factor of 0.707 (Butterworth), which in combination gives a Linkwitz–Riley 4th order. 3. COMPONENT VALUES FOR FILTERS 3.1 Universal Parameters RC chain capacitors: 10 nF, film capacitors, tolerance ≤ 5% Resistors: metal-film, tolerance ≤ 1% The gain of each stage is set by feedback resistors: Rf = 5.9 kΩ Rg = 10 kΩ K ≈ 1 + (Rf / Rg) ≈ 1.59 The circuit should allow for the installation of a small capacitor (10–47 pF) in parallel with Rf (footprint provided) for possible stability correction (not mandatory to install in the first revision). 3.2 650 Hz Filters (Low-frequency boundary for MF) These are used for the division between W250 and MR130. LP650 — Low-frequency Filter 2nd Order R1 = 24.9 kΩ R2 = 24.9 kΩ C1 = 10 nF C2 = 10 nF Two stages: LP650 #1 and LP650 #2. HP650 — MF High-frequency Filter 2nd Order Same values: R1 = 24.9 kΩ R2 = 24.9 kΩ C1 = 10 nF C2 = 10 nF Two stages: HP650 #1 and HP650 #2. 3.3 2500 Hz Filters (Upper boundary for MF) These are used for the division between MR130 → MDT-12. LP2500 — High-pass MF Filter R1 = 6.34 kΩ R2 = 6.34 kΩ C1 = 10 nF C2 = 10 nF Two stages: LP2500 #1 and LP2500 #2. HP2500 — High-frequency Filter Same values: R1 = 6.34 kΩ R2 = 6.34 kΩ C1 = 10 nF C2 = 10 nF Two stages: HP2500 #1 and HP2500 #2. 4. OPERATIONAL AMPLIFIERS The NE5532 (dual op-amp, DIP-8 or SOIC-8) is used. A minimum of 4 packages (8 channels) for filters: NE5532 Function U1A, U1B LP650 #1, LP650 #2 (LF) U2A, U2B HP650 #1, HP650 #2 (Lower MF cut-off) U3A, U3B LP2500 #1, LP2500 #2 (Upper MF cut-off) U4A, U4B HP2500 #1, HP2500 #2 (HF) Additionally: U5 — input buffer / preamplifier (both channels) If necessary, an additional NE5532 (U6) for the balanced input (see section 6.2). All NE5532 should have local decoupling for power supply (see section 5.1). 5. CROSSOVER POWER SUPPLY AM4T-4815DZ DC/DC module is used: Input: 36–72 V, connected to the 48 V power supply for TPA3255 amplifiers. Output: +15 V / –15 V, up to 0.133 A per side. Maximum output capacitance: ≤ 47 µF per side (according to the datasheet). 5.1 Power Filtering Input (48 V): RC variant (simpler, acceptable for the first revision): R = 1–2 Ω / 1–2 W C = 47–100 µF (for 63 V or higher) LC variant (preferred for improved noise immunity): L = 10–22 µH C = 47–100 µF The developer may implement LC if confident in choosing the inductance and its parameters. Output +15 V and –15 V (general filtering): Electrolytic capacitor 10–22 µF per side 100 nF (X7R) per side to GND Local decoupling for NE5532 (REQUIRED): For each NE5532 package: 100 nF between +15 V and GND 100 nF between –15 V and GND Place as close as possible to the op-amp power pins (short traces). Additional local filtering for power lines: For each NE5532, decouple from the ±15 V main rails: Either 4.7–10 Ω resistor in series with +15 V and –15 V, Or ferrite bead in each rail. After this component, place local capacitors (100 nF + 1–4.7 µF) to ground. 6. INPUT TRACT: INPUTS, BUFFER, ADJUSTMENT 6.1 Unbalanced Input (RCA / Jack / Linear) The main mode is the unbalanced linear input, for example, RCA. Input tract structure: RF-filter and protection: Signal → series resistor Rin_series = 100–220 Ω After resistor — capacitor Cin_RF = 470–1000 pF to GND This forms a low-level RF filter and reduces high-frequency noise. DC-block (low-pass HP-filter): Capacitor Cin_DC = 2.2–4.7 µF film in series Resistor to ground Rin_to_GND = 47–100 kΩ Cut-off frequency — negligible in the audio range but removes DC. Input buffer / preamplifier (NE5532, U5): Non-inverting configuration. Input — after DC-block. Gain: adjustable, e.g., Rg_fixed = 10 kΩ (to GND through trimmer) Rf = 10–20 kΩ + footprint for trimmer (e.g., 20 kΩ) The gain should be in the range of 0 dB to +10…+12 dB. Possible configuration: Rg = 10 kΩ fixed Rf = 10 kΩ + 10 kΩ trimmer in series. This allows adjusting the overall level of the crossover according to the source and amplifier levels. Buffer output: A low-impedance output (after NE5532) This signal is simultaneously fed to the inputs of all filters: LP650 (LF) HP650 → LP2500 (MF) HP2500 (HF) 6.2 Balanced Input (XLR / TRS) — Optional, but laid out on the board The board should allow for a balanced input, even if it’s not used in the first revision. Implementation requirements: XLR/TRS connector (L, R, GND) or separate 3-pin header. Simple differential receiver on NE5532 (extra U6 package or use one channel of U5 if sufficient). Circuit: classic instrumentation amplifier or differential amplifier: Inputs: IN+ and IN– Output — single-ended signal of the same level (or slightly amplified), fed to DC-block and buffer (or directly to the buffer if integrated). Switching between balanced/unbalanced mode: Implement using jumpers / bridges or adapters: Either switch before the buffer, Or use two separate pads, one of which is unused. All balanced input grounds must be connected to the same AGND point as the unbalanced input to avoid ground loops. 7. LEVEL ADJUSTMENT OF BANDS (BEST METHOD) The level adjustment of each band (LOW, MID, HIGH) is required to match the sensitivity of the speakers and amplifiers. Recommended method: After each full filter (after LP650×2, MID-chain HP650×2 → LP2500×2, HP2500×2), install: A passive attenuator: Series: Rseries (0–10 kΩ, adjustable) Shunt: Rshunt to GND (10–22 kΩ, fixed or adjustable) For simplicity and reliability: Implementation on the board: For each band (LOW, MID, HIGH) provide: Pad for multi-turn trimmer 10–20 kΩ as a divider (between signal and ground) in the "level adjustment" configuration. If adjustment is not needed — install a fixed divider (two resistors) or simply use a jumper. It is preferable to use: For setup: multi-turn trimmers 10–20 kΩ, available on the top side of the board. Nominals for the initial configuration can be selected through measurements, but the PCB should have flexibility. This provides: Accurate balancing of band volumes without interfering with the filters; Flexibility for fine-tuning to the specific characteristics of the speakers. 8. INPUTS AND OUTPUTS OF THE CROSSOVER (FINAL) 8.1 Inputs 1× Unbalanced linear input (RCA or 3-pin header) 1× Balanced input (XLR/TRS or 3-pin header) — optional, but space must be provided on the board. Input impedance (unbalanced after RF-filter): 22–50 kΩ. The input tract must be implemented using shielded cables. 8.2 Outputs Outputs to amplifiers: Output Signal LOW OUT After LP650×2 (LF) MID OUT After HP650×2 → LP2500×2 (MF) HIGH OUT After HP2500×2 (HF) Each output: Series resistor 100–220 Ω (prevents possible oscillations and simplifies cable management). A nearby own AGND pad (ground output), so the signal pair SIG+GND runs together. Outputs should be compactly placed on 2-pin connectors (SIG+GND) or 3-pin (SIG+GND+reserve). 9. PCB DESIGN REQUIREMENTS 9.1 Board Number of layers: 2 layers Bottom layer: solid analog ground (AGND). 9.2 Component Placement Key principles: RC chains of each filter (R1, R2, C1, C2, Rf, Rg) should form a compact "island" around the corresponding op-amp. If elements are placed too far apart, the filter will not work correctly (calculated frequency and Q will shift). Feedback tracks (Rf and Rg) should be as short and direct as possible. The AM4T-4815DZ module should be placed: Far from the input buffer, Far from the first filter stages, If necessary, make a "cutout" in the ground under it to limit noise propagation. Place the input connector, RF-filter, and buffer on one side of the board, and the output connectors on the opposite side. 9.3 Ground The entire audio circuit uses one analog ground: AGND. Connect AGND to the power ground (48 V and amplifiers) at one point ("star"). The star should be implemented as: One point/pad where: The ground of the input, The ground of the filters, The ground of the outputs, The ground of the DC/DC. Avoid long narrow "ground" jumpers — use wide polygons with a single connection point. 9.4 Placement of Output Connectors Group LOW/MID/HIGH compactly. Each should have its own GND pad nearby. Route the SIG+GND pairs as signal pairs, avoiding large loops. 10. ADDITIONAL ELEMENTS: PROTECTION, TEST POINTS 10.1 Test Points (TP) Be sure to provide test points (pads): TP_IN — crossover input (after buffer) TP_LOW — LF filter output TP_MID — MF filter output TP_HIGH — HF filter output TP_+15, TP_–15, TP_GND — power control This greatly simplifies debugging with an oscilloscope. 10.2 Power Protection On the 48 V input — it is advisable to provide: Diode/scheme for reverse polarity protection (if possible), TVS diode or varistor for voltage spikes (optional). 10.3 Possible Stability Correction Pads for small capacitors (10–47 pF) in parallel with Rf in buffers and, if necessary, in some stages — in case of stability issues (this can be not installed in the first revision, but footprints should be provided). 11. BILL OF MATERIALS (BOM) Operational Amplifiers: NE5532 — 4 pcs (filters) NE5532 — 1–2 pcs (input buffer and balanced input) Total: 5–6 NE5532 packages. Resistors (1%, metal-film): 24.9 kΩ — 8 pcs 6.34 kΩ — 8 pcs 10 kΩ — ≥ 12 pcs (feedback, buffers, etc.) 5.9 kΩ — 8 pcs 22 kΩ — 1–2 pcs (input, auxiliary chains) 47–100 kΩ — several pcs (DC-block, input) 100 kΩ — 1 pc (if needed) 100–220 Ω — 4–6 pcs (outputs, RF, protection) 4.7–10 Ω — 2 pcs for each op-amp or group of op-amps (power filtering) — quantity to be clarified during routing. Trimmer Resistors: 10–20 kΩ multi-turn — one for each band (LOW, MID, HIGH) 10–20 kΩ — 1–2 pcs for the input buffer (overall gain adjustment). Capacitors: 10 nF film — 16 pcs (RC filters) 2.2–4.7 µF film — 1–2 pcs (input DC-block) 10–22 µF electrolytic — 2–4 pcs (DC/DC outputs) 1–4.7 µF (X7R / tantalum) — 1 pc for local power filtering (optional). 100 nF ceramic X7R — 10–20 pcs (local decoupling for each op-amp) 470–1000 pF — 1–2 pcs (RF filter on the input) 10–47 pF — optional for stability correction (Rf). Power Supply: AM4T-4815DZ — 1 pc Inductor 10–22 µH (if LC filter) — 1 pc R 1–2 Ω / 1–2 W — 1 pc (if RC filter). Connectors: Input (RCA + 3-pin for internal input) Balanced (XLR/TRS or 3-pin header) Outputs LOW/MID/HIGH — 2-pin/3-pin connectors. 12. TESTING RECOMMENDATIONS 12.1 First Power-up Apply ±15 V without installed op-amps. Check with a multimeter: +15 V –15 V No short circuits in the power supply. Install the op-amps (NE5532). Apply a sine wave of 100–200 mV RMS (signal generator). Check with an oscilloscope at TP: LP650 — should pass LF and roll off everything above 650 Hz. HP650 — should roll off LF, pass everything above 650 Hz. LP2500 — should roll off above 2500 Hz. **HP250 0** — should pass everything above 2500 Hz. 12.2 Phase Check The Linkwitz–Riley 4th order should give a flat frequency response when summed at the crossover points. This can be verified with REW/Arta. 12.3 Noise Check If there is noticeable "shshsh" or whistling: Check: Grounding layout (star) Placement and filtering of AM4T-4815DZ Presence and proper installation of all 100 nF and local filters. 13. FINAL RECOMMENDATIONS FOR BEGINNERS Do not rush, build the circuit step by step: input → buffer → one filter → test, then continue. Check component values at least twice before soldering. Filters should be routed as compact "islands" around the op-amp, do not stretch R and C across the board. Always remember the rule: "The feedback trace should be as short as physically possible." Before ordering the PCB, make a "paper prototype": print at 1:1, cut it out, place real components to check everything fits.

The NTTFS4C06N, manufactured by ON Semiconductor, is a high-performance, single N-Channel Power MOSFET designed for applications requiring efficient switching and low conduction losses. This MOSFET is rated for a maximum drain-to-source voltage (VDSS) of 30 V and can handle continuous drain currents up to 67 A. Key features include a low RDS(on) of 4.2 mΩ at VGS = 10 V and 6.1 mΩ at VGS = 4.5 V, which minimizes conduction losses, and optimized gate charge characteristics that reduce switching losses. Additionally, the component boasts low capacitance to minimize driver losses, making it ideal for use in DC-DC converters, power load switches, and notebook battery management systems. The device is RoHS compliant, Pb-free, and halogen-free, ensuring environmentally friendly compliance. The NTTFS4C06N is available in a compact WDFN8 package, making it suitable for high-density circuit designs.

The AON7292 from Alpha & Omega Semiconductor is a high-performance, 100V N-Channel MOSFET utilizing the latest Trench Power AlphaMOS (aMOS MV) technology. This component is optimized for fast-switching applications and features very low RDS(ON) values, with <24mΩ at VGS=10V and <32mΩ at VGS=4.5V, making it ideal for synchronous rectification in DC/DC and AC/DC converters, as well as isolated DC/DC converters in telecom and industrial applications. The AON7292 is housed in a compact DFN 3.3×3.3 package and complies with RoHS and Halogen-Free standards. Key specifications include a continuous drain current of 23A at Tc=25°C, a pulsed drain current of 45A, and a maximum power dissipation of 28W at Tc=25°C. The component also boasts low gate charge characteristics, with a total gate charge of 17nC at VGS=10V, ensuring efficient operation in high-speed switching environments. Additionally, it has been rigorously tested for Unclamped Inductive Switching (UIS) and gate resistance, ensuring reliability and performance in demanding applications.

The NTTFS4C05N is an advanced N-Channel MOSFET designed by ON Semiconductor, optimized for high-efficiency power management applications. This MOSFET features a low RDS(on) to minimize conduction losses, low capacitance to reduce driver losses, and an optimized gate charge for minimal switching losses. It operates at a maximum drain-to-source voltage (VDSS) of 30V and can handle continuous drain currents up to 75A. The device is available in a compact WDFN8 package and is suitable for use in DC-DC converters, power load switches, and notebook battery management systems. The component is Pb-Free, Halogen Free/BFR Free, and RoHS compliant, ensuring it meets global environmental standards. Additionally, the NTTFS4C05N offers robust performance with a maximum power dissipation of 33W at a case temperature of 25°C, and it can withstand pulsed drain currents up to 174A. It also features a gate threshold voltage range of 1.3V to 2.2V and boasts fast switching characteristics with turn-on and turn-off delay times as low as 2ns and 8ns, respectively.

The NTMFS4C024N is a high-performance N-Channel MOSFET manufactured by ON Semiconductor, designed for power applications such as CPU power delivery and DC-DC converters. This single MOSFET, housed in a SO-8 FL package, boasts a maximum drain-to-source voltage (VDSS) of 30 V and can handle continuous drain currents up to 78 A at 25°C. It features exceptionally low RDS(on) values of 2.8 mΩ at 10 V and 4.0 mΩ at 4.5 V, which minimizes conduction losses. Additionally, the device is optimized for low gate charge and capacitance to reduce driver and switching losses, enhancing overall efficiency. The NTMFS4C024N is Pb-Free, Halogen Free/BFR Free, and RoHS compliant, ensuring it meets modern environmental standards. With a maximum power dissipation of 33 W and thermal resistance junction-to-case of 3.8°C/W, it is well-suited for high-power applications requiring robust thermal performance.

The Vishay Siliconix Si2324DS is a high-performance N-Channel MOSFET designed for applications requiring efficient switching and power management. This component, housed in a compact TO-236 (SOT-23) package, features a drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of up to 2.3A at 25°C. The Si2324DS offers low on-resistance (R_DS(on)) values of 0.234Ω at a gate-source voltage (V_GS) of 10V, ensuring minimal power loss and high efficiency. With a typical gate charge (Q_g) of 2.9nC, it is suitable for high-speed switching applications. The MOSFET is fully Rg and UIS tested, ensuring reliability and robustness in demanding environments. This component is ideal for use in DC/DC converters, load switches, and LED backlighting in LCD TVs, making it a versatile choice for various power management applications. The Si2324DS is lead-free, halogen-free, and RoHS compliant, aligning with environmental and safety standards.

The NTMFS4C029N, manufactured by ON Semiconductor, is a high-performance, single N-channel MOSFET designed for power applications. This MOSFET features a low RDS(on) to minimize conduction losses, low capacitance to reduce driver losses, and an optimized gate charge to minimize switching losses. It is packaged in a compact SO-8 FL package, making it suitable for space-constrained designs. The component can handle a maximum drain-to-source voltage (VDSS) of 30 V and a continuous drain current (ID) of up to 46 A at 25°C. It is ideal for applications such as CPU power delivery and DC-DC converters. The NTMFS4C029N is Pb-free, halogen-free/BFR-free, and RoHS compliant, ensuring it meets modern environmental and safety standards.