Buck Switching Regulator IC Positive Adjustable 0.9V 1 Output 2A 16-VFQFN Exposed Pad #RegulatorSwitching #commonpartslibrary

Buck, Buck-Boost Switching Regulator Input Voltage Range 4.75V to 28V with 100% Duty Cycle Mode. Output 5V #project-template #voltageregulator #template

Buck, Buck-Boost Switching Regulator Input Voltage Range 4.75V to 28V with 100% Duty Cycle Mode. Output 5V #project-template #voltageregulator #template

Buck, Buck-Boost Switching Regulator Input Voltage Range 4.75V to 28V with 100% Duty Cycle Mode. Output 5V With JST connectors(Vin and Vout) and with block terminal connectors(Vin and Vout) #project-template #voltageregulator #project

Buck, Buck-Boost Switching Regulator Input Voltage Range 4.75V to 28V with 100% Duty Cycle Mode. Output 5V #project-template #voltageregulator #template

Buck, Buck-Boost Switching Regulator Input Voltage Range 4.75V to 28V with 100% Duty Cycle Mode. Output 5V #project-template #voltageregulator #template

Buck, Buck-Boost Switching Regulator Input Voltage Range 4.75V to 28V with 100% Duty Cycle Mode. Output 5V #project-template #voltageregulator #template

Buck, Buck-Boost Switching Regulator Input Voltage Range 4.75V to 28V with 100% Duty Cycle Mode. Output 5V #project-template #voltageregulator #template

Buck Converter Input Voltage: 220VAC Input Power: 30W AC Frequency : 50/60Hz Power Factor: 0.5 LED Output Voltage: 160V LED Output Current: 170mA Driver Efficiency : 93% Switching Frequency : 200kHz Output Current after diode bridge rectifier : 100mA Output Voltage after diode bridge rectifier : 310VDC

The NTS4001N and NVS4001N are single N-Channel, small signal MOSFETs from ON Semiconductor, housed in a compact SC-70/SOT-323 package. These components are designed for applications requiring efficient low-side load switching, such as Li-Ion battery-supplied devices including cell phones, PDAs, and digital still cameras, as well as for use in buck converters and level shifters. Featuring a maximum drain-to-source voltage (VDSS) of 30 V and a continuous drain current (ID) of 270 mA at 25°C, these MOSFETs are optimized for fast switching with low gate charge. The gate-to-source voltage (VGS) can withstand up to ±20 V, and the devices are ESD protected and AEC-Q101 qualified, making them suitable for automotive applications. The NTS4001N and NVS4001N are also Pb-Free and RoHS compliant, ensuring environmental compliance. With a typical RDS(on) of 1.0 Ω at VGS = 4.0 V and 1.5 Ω at VGS = 2.5 V, these MOSFETs offer reliable performance in a small footprint, 30% smaller than the TSOP-6 package.

The NTJD4001N and NVTJD4001N from ON Semiconductor are dual N-Channel MOSFETs designed for small signal applications. Encased in a compact SC-88 (SOT-363) package, these MOSFETs offer a drain-to-source voltage (VDSS) of 30 V and a continuous drain current (ID) of up to 250 mA at 25°C. Key features include low gate charge for fast switching, ESD-protected gates, and AEC-Q101 qualification, making them suitable for use in automotive environments. These MOSFETs are ideal for applications such as low side load switches, Li-Ion battery-powered devices (e.g., cell phones, PDAs, DSCs), buck converters, and level shifters. The devices are RoHS compliant and Pb-free, ensuring environmental compliance and reliability. The thermal resistance from junction to ambient is 458°C/W, and the devices can operate within a temperature range of -55°C to 150°C. The NTJD4001N and NVTJD4001N also feature low RDS(on) values, ensuring efficient performance in various electronic circuits.

The NTJD4001N and NVTJD4001N from ON Semiconductor are dual, N-channel MOSFETs designed for small signal applications. These components are optimized for low gate charge to enable fast switching speeds and are housed in a compact SC-88 package, which is noted to be 30% smaller than the TSOP-6, allowing for savings in PCB space. Both variants operate with a drain-to-source voltage (VDSS) of 30 V and can handle continuous drain currents of up to 250 mA at 25℃, reducing to 180 mA at 85℃. The devices are distinctive for their ESD protected gates and meet the AEC Q101 qualification criteria, making the NVTJD4001N version particularly suitable for automotive and high-reliability applications. With power dissipation cap of 272 mW at 25℃, these components are ideal for low-power applications like low-side load switches, Li-Ion battery-supplied devices, buck converters, and level shifts. They are furnished in a lead-free, RoHS-compliant package, assuring environmental consideration in both manufacturing and application use. ON Semiconductor emphasizes several key attributes of the NTJD4001N and NVTJD4001N, including their low gate charge feature, small footprint, and robust durability, marked by ESD protection and AEC Q101 qualification for the NVTJD4001N variation. These characteristics make these MOSFETs viable solutions for engineers focusing on optimizing space and power efficiency in their circuit designs, particularly in the realms of portable electronic devices, power management circuits, and various automotive applications.