SLC NAND Flash Parallel/Serial 3.3V 256G-bit 32G x 8 100-Pin LBGA FLASH - NAND (SLC) Memory IC 256Gbit Parallel 100 MHz 100-LBGA (12x18) The MT29F256G08AUCABH3-10ITZ:A is a high-density 256Gb Single-Level Cell (SLC) NAND Flash memory device from Micron Technology. It provides non-volatile data storage with high reliability, fast read/write performance, and long endurance, making it suitable for industrial, networking, embedded computing, automotive, and data-logging applications. The device supports both asynchronous and synchronous interfaces and complies with the Open NAND Flash Interface (ONFI) standard for enhanced interoperability and performance. It is housed in a compact 100-ball LBGA package (12 mm × 18 mm). • Open NAND Flash Interface (ONFI) 2.2-compliant1 • Single-level cell (SLC) technology • Organization – Page size x8: 8640 bytes (8192 + 448 bytes) – Block size: 128 pages (1024K + 56K bytes) – Plane size: 2 planes x 2048 blocks per plane – Device size: 32Gb: 4096 blocks; 64Gb: 8192 blocks; 128Gb: 16,384 blocks; 256Gb: 32,768 blocks • Synchronous I/O performance – Up to synchronous timing mode 5 – Clock rate: 10ns (DDR) – Read/write throughput per pin: 200 MT/s • Asynchronous I/O performance – Up to asynchronous timing mode 5 – tRC/tWC: 20ns (MIN) – Read/write throughput per pin: 50 MT/s • Array performance – Read page: 35µs (MAX) – Program page: 350µs (TYP) – Erase block: 1.5ms (TYP) • Operating Voltage Range – VCC: 2.7–3.6V – VCCQ: 1.7–1.95V, 2.7–3.6V • Command set: ONFI NAND Flash Protocol • Advanced Command Set – Program cache – Read cache sequential – Read cache random – One-time programmable (OTP) mode – Multi-plane commands – Multi-LUN operations – Read unique ID – Copyback • First block (block address 00h) is valid when shipped from factory. For minimum required ECC, see Error Management (page 114). • RESET (FFh) required as first command after power-on • Operation status byte provides software method for detecting – Operation completion – Pass/fail condition – Write-protect status • Data strobe (DQS) signals provide a hardware method for synchronizing data DQ in the synchronous interface • Copyback operations supported within the plane from which data is read • Quality and reliability – Data retention: JESD47G compliant; see qualification report – Endurance: 60,000 PROGRAM/ERASE cycles • Operating temperature: – Commercial: 0°C to +70°C – Industrial (IT): –40ºC to +85ºC • Package – 52-pad LGA – 48-pin TSOP – 100-ball BGA – 132-ball BGA #Micron #NANDFlash #SLCNAND #FlashMemory #NonVolatileMemory #ONFI #EmbeddedSystems #IndustrialElectronics #DataStorage #MemoryIC #LBGA100 #HighReliability #MT29F256G08AUCABH310ITZA #MicronMemory #ParallelNANDFlash

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adrian95

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