The NTZD3154N, manufactured by ON Semiconductor, is a dual N-channel MOSFET designed for small signal applications. This component boasts a low RDS(on) for improved system efficiency and a low threshold voltage, making it highly suitable for applications such as load/power switches, power supply converter circuits, and battery management in devices like cell phones, digital cameras, and PDAs. The NTZD3154N features a compact 1.6 x 1.6 mm footprint and an ESD-protected gate, ensuring robust performance in constrained spaces. With a maximum drain-to-source voltage (VDSS) of 20 V and a continuous drain current of up to 540 mA (at 25°C), the NTZD3154N is optimized for efficient power management. The device is also compliant with RoHS standards, being Pb-Free and Halogen Free/BFR Free, ensuring environmentally friendly usage. The component is available in the SOT-563-6 package, identified by the specific device code "TV" and a date code marking.

The AO3414 from Alpha & Omega Semiconductor is an N-Channel Enhancement Mode Field Effect Transistor (FET) leveraging advanced trench technology to deliver excellent RDS(ON), low gate charge, and reliable operation with gate voltages as low as 1.8V. Engineered for applications requiring reliable load switching or precise control in PWM circuits, the AO3414 is well-suited for high-efficiency performance. This component features a maximum drain-source voltage (VDS) of 20V and supports a continuous drain current (ID) of 4.2A at VGs of 4.5V. Distinguishing characteristics include RDS(ON) values of less than 50mΩ at VGS = 4.5V, 63mΩ at VGS = 2.5V, and 87mΩ at VGS = 1.8V, ensuring minimal power loss and optimal thermal efficiency. Packaged in a compact TO-236 (SOT-23) form factor, it meets Pb-free standards and is available as the AO3414L for a Green Product option, both versions maintaining electrical equivalence. The AO3414 also boasts fast switching times and robust thermal performance, with comprehensive specifications confirming its suitability for high-performance consumer electronics.

The AO3414 from Alpha & Omega Semiconductor is a N-channel enhancement mode field-effect transistor (FET) that utilizes advanced trench technology to offer exceptional performance characteristics, including low RDS(ON), minimal gate charge, and compatibility with gate voltages as low as 1.8V. This component is specifically designed for use in load-switching and PWM applications. The AO3414 is a Pb-free product meeting ROHS and Sony 259 specifications, with an option for a Green Product under part number AO3414L. Both variants are electrically identical. Key specifications include a drain-source voltage (VDS) of 20V, a continuous drain current (ID) of 4.2A at VGS=4.5V, and various RDS(ON) values depending on the gate voltage, with a maximum of 87mΩ at VGS=1.8V. Encased in the TO-236 (SOT-23) package, the AO3414 features a maximum power dissipation of 1.4W at 25℃ and a junction-to-ambient thermal resistance of 90°C/W. This robust FET additionally offers a commendable forward transconductance of 11 S and a low total gate charge of 6.2 nC, making it an efficient choice for high-performance applications.

The NTTFS4C06N, manufactured by ON Semiconductor, is a high-performance, single N-Channel Power MOSFET designed for applications requiring efficient switching and low conduction losses. This MOSFET is rated for a maximum drain-to-source voltage (VDSS) of 30 V and can handle continuous drain currents up to 67 A. Key features include a low RDS(on) of 4.2 mΩ at VGS = 10 V and 6.1 mΩ at VGS = 4.5 V, which minimizes conduction losses, and optimized gate charge characteristics that reduce switching losses. Additionally, the component boasts low capacitance to minimize driver losses, making it ideal for use in DC-DC converters, power load switches, and notebook battery management systems. The device is RoHS compliant, Pb-free, and halogen-free, ensuring environmentally friendly compliance. The NTTFS4C06N is available in a compact WDFN8 package, making it suitable for high-density circuit designs.

The AO3414, manufactured by Alpha & Omega Semiconductor, is a cutting-edge N-Channel Enhancement Mode Field Effect Transistor designed for exceptional RDS(ON) performance, low gate charge, and operation with gate voltages as low as 1.8V. The AO3414 is well-suited for load switching and PWM applications, providing a durable solution with a maximum drain-source voltage (VDS) of 20V and a continuous drain current (ID) up to 4.2A at room temperature. This component offers multiple thresholds for minimal on-resistances, including RDS(ON) values of less than 50mΩ at VGS of 4.5V, less than 63mΩ at VGS of 2.5V, and less than 87mΩ at VGS of 1.8V. Packaged in a TO-236 (SOT-23) form factor, the AO3414 ensures thermal efficiency with maximum junction-to-ambient thermal resistances of 90°C/W for transient conditions and 125°C/W for steady-state. Additional features include a maximum power dissipation of 1.4W at 25℃, a gate-source voltage (VGS) rated at +8V, and dynamic switching characteristics optimized for high-frequency applications. Available in both standard (Pb-free) and Green Product (AO3414L) versions, the AO3414 complies with RoHS and Sony 259 environmental standards, ensuring it is environmentally friendly and reliable for various consumer market applications.

The NTTFS4C05N is an advanced N-Channel MOSFET designed by ON Semiconductor, optimized for high-efficiency power management applications. This MOSFET features a low RDS(on) to minimize conduction losses, low capacitance to reduce driver losses, and an optimized gate charge for minimal switching losses. It operates at a maximum drain-to-source voltage (VDSS) of 30V and can handle continuous drain currents up to 75A. The device is available in a compact WDFN8 package and is suitable for use in DC-DC converters, power load switches, and notebook battery management systems. The component is Pb-Free, Halogen Free/BFR Free, and RoHS compliant, ensuring it meets global environmental standards. Additionally, the NTTFS4C05N offers robust performance with a maximum power dissipation of 33W at a case temperature of 25°C, and it can withstand pulsed drain currents up to 174A. It also features a gate threshold voltage range of 1.3V to 2.2V and boasts fast switching characteristics with turn-on and turn-off delay times as low as 2ns and 8ns, respectively.

The EMF30N02J from Excelliance MOS Corporation is an N-Channel Logic Level Enhancement Mode Field Effect Transistor designed for high efficiency and performance in a compact SOT-23 package. With a maximum Drain-Source voltage (BVDSS) of 20V and a maximum Drain current (ID) of 5A at 25°C, this MOSFET is ideal for low-voltage switching applications. It features a low maximum Drain-Source On-State Resistance (RDSON) of 30mΩ at a Gate-Source voltage (VGS) of 4.5V, ensuring minimal power dissipation. The component supports a Gate-Source voltage (VGS) up to +12V and operates within a temperature range of -55°C to 150°C. The EMF30N02J is also Pb-Free, Halogen-Free, and classified as a GP Green Product, making it environmentally friendly. Key electrical characteristics include a Gate Threshold Voltage (VGS(th)) between 0.45V and 1.2V, a maximum Gate-Body Leakage (IGSS) of 100nA, and a typical Forward Transconductance (gfs) of 7S. Additionally, the MOSFET exhibits excellent dynamic performance with a total Gate Charge (Qg) of 6.2nC, making it suitable for high-speed switching applications. The thermal resistance is rated at 100°C/W from junction-to-ambient and 55°C/W from junction-to-lead, ensuring efficient thermal management.

The IPB017N10N5LF is a high-performance N-channel MOSFET from Infineon's OptiMOS™ 5 Linear FET series, designed specifically for hot-swap and e-fuse applications. This 100 V component, housed in a D2-PAK 7pin package (PG-TO 263-7), features exceptionally low on-resistance (RDS(on)) and a wide safe operating area (SOA), making it ideal for demanding power management tasks. The device is rated for a continuous drain current of up to 180 A (silicon limited) and 314 A (package limited), with a maximum pulsed drain current of 720 A. It supports gate-source voltages ranging from -20 V to 20 V and is 100% avalanche tested, ensuring robust performance under extreme conditions. The IPB017N10N5LF is RoHS compliant, Pb-free, and halogen-free, adhering to environmental standards. Key electrical characteristics include a maximum RDS(on) of 1.7 mΩ at VGS=10 V and a gate threshold voltage range of 2.5 V to 4.1 V. This MOSFET is suitable for applications requiring high efficiency and reliability, supported by its qualification according to JEDEC standards.

The NTS4001N and NVS4001N are single N-Channel, small signal MOSFETs from ON Semiconductor, housed in a compact SC-70/SOT-323 package. These components are designed for applications requiring efficient low-side load switching, such as Li-Ion battery-supplied devices including cell phones, PDAs, and digital still cameras, as well as for use in buck converters and level shifters. Featuring a maximum drain-to-source voltage (VDSS) of 30 V and a continuous drain current (ID) of 270 mA at 25°C, these MOSFETs are optimized for fast switching with low gate charge. The gate-to-source voltage (VGS) can withstand up to ±20 V, and the devices are ESD protected and AEC-Q101 qualified, making them suitable for automotive applications. The NTS4001N and NVS4001N are also Pb-Free and RoHS compliant, ensuring environmental compliance. With a typical RDS(on) of 1.0 Ω at VGS = 4.0 V and 1.5 Ω at VGS = 2.5 V, these MOSFETs offer reliable performance in a small footprint, 30% smaller than the TSOP-6 package.

The NTMFS4C024N is a high-performance N-Channel MOSFET manufactured by ON Semiconductor, designed for power applications such as CPU power delivery and DC-DC converters. This single MOSFET, housed in a SO-8 FL package, boasts a maximum drain-to-source voltage (VDSS) of 30 V and can handle continuous drain currents up to 78 A at 25°C. It features exceptionally low RDS(on) values of 2.8 mΩ at 10 V and 4.0 mΩ at 4.5 V, which minimizes conduction losses. Additionally, the device is optimized for low gate charge and capacitance to reduce driver and switching losses, enhancing overall efficiency. The NTMFS4C024N is Pb-Free, Halogen Free/BFR Free, and RoHS compliant, ensuring it meets modern environmental standards. With a maximum power dissipation of 33 W and thermal resistance junction-to-case of 3.8°C/W, it is well-suited for high-power applications requiring robust thermal performance.

The 2N7002E is a small signal MOSFET produced by ON Semiconductor, designed for applications requiring a low RDS(on) and high efficiency in a compact SOT-23 package. This N-Channel MOSFET can handle a maximum drain-to-source voltage (VDSS) of 60 V and a continuous drain current (ID) of up to 310 mA at 25°C. It features trench technology for enhanced performance and is AEC-Q101 qualified, making it suitable for automotive and other high-reliability applications. The device is Pb-free, Halogen-free, and RoHS compliant. Typical applications include low side load switches, level shift circuits, DC-DC converters, and various portable devices such as digital still cameras (DSC), PDAs, and cell phones. The MOSFET's thermal characteristics include a junction-to-ambient thermal resistance of 417°C/W in steady state and 300°C/W for short durations (t ≤ 5 s). The 2N7002E is available in tape and reel packaging, with part numbers 2N7002ET1G and 2N7002ET7G for standard applications, and S2N7002ET1G and S2N7002ET7G for automotive-grade requirements.

The NTMFS4C03N, manufactured by ON Semiconductor, is a high-performance, single N-Channel MOSFET designed for power applications. Encased in a compact SO-8FL package, this component offers a maximum drain-to-source voltage (VDSS) of 30V and a continuous drain current (ID) of up to 136A at 25°C. With an exceptionally low RDS(on) of 2.1 mΩ at VGS of 10V, it minimizes conduction losses, making it ideal for high-efficiency power management. Additionally, the MOSFET features low gate charge (QG) and capacitance, reducing driver losses and enhancing overall system efficiency. The device is Pb-Free, Halogen Free/BFR Free, and RoHS compliant, ensuring adherence to environmental standards. It also boasts a robust thermal performance with a junction-to-case thermal resistance (RθJC) of 1.95°C/W, making it suitable for applications requiring efficient heat dissipation. The NTMFS4C03N is available in tape and reel packaging options, accommodating various manufacturing needs.

The AO3414, manufactured by Alpha & Omega Semiconductor, is an N-Channel Enhancement Mode Field Effect Transistor (FET) designed using advanced trench technology to deliver superior RDS(ON), low gate charge, and operation with gate voltages as low as 1.8V. Ideal for load switch and PWM applications, the AO3414 is available in a Pb-free version that complies with ROHS and Sony 259 specifications, and a Green Product variant (AO3414L), both of which are electrically identical. Key specifications include a drain-source voltage (VDS) of 20V, a continuous drain current (ID) of 4.2A at VGS=4.5V, and a maximum RDS(ON) of 50mΩ at VGS=4.5V. The device is housed in a TO-236 (SOT-23) package, ensuring compact and efficient thermal performance. Additionally, the AO3414 boasts a maximum power dissipation of 1.4W at TA=25°C, a gate-source voltage (VGS) rating of +8V, and an operating junction temperature range of -55°C to 150°C. This component is optimized for consumer market applications, offering reliable performance and compliance with environmental standards.

The NTK3134N from ON Semiconductor is a high-performance, single N-Channel MOSFET designed for power and interface switching applications in ultra-small portable electronics. Packaged in a compact SOT-723 form factor, which is 44% smaller in footprint and 38% thinner than the SC89, this MOSFET features a low RDS(on) for efficient load switching. It operates at low logic level gate drives, with a maximum drain-to-source voltage (VDSS) of 20V and a continuous drain current (ID) of up to 890mA at 25°C. The component supports pulsed drain currents up to 1.8A and boasts ESD protection. The NTK3134N is also Pb-Free, Halogen Free/BFR Free, and RoHS Compliant, making it an environmentally friendly choice for designers. Key applications include load/power switching, interface switching, logic level shifting, and battery management.

The NTJD4001N and NVTJD4001N from ON Semiconductor are dual N-Channel MOSFETs designed for small signal applications. Encased in a compact SC-88 (SOT-363) package, these MOSFETs offer a drain-to-source voltage (VDSS) of 30 V and a continuous drain current (ID) of up to 250 mA at 25°C. Key features include low gate charge for fast switching, ESD-protected gates, and AEC-Q101 qualification, making them suitable for use in automotive environments. These MOSFETs are ideal for applications such as low side load switches, Li-Ion battery-powered devices (e.g., cell phones, PDAs, DSCs), buck converters, and level shifters. The devices are RoHS compliant and Pb-free, ensuring environmental compliance and reliability. The thermal resistance from junction to ambient is 458°C/W, and the devices can operate within a temperature range of -55°C to 150°C. The NTJD4001N and NVTJD4001N also feature low RDS(on) values, ensuring efficient performance in various electronic circuits.

The NTMFS4C029N, manufactured by ON Semiconductor, is a high-performance, single N-channel MOSFET designed for power applications. This MOSFET features a low RDS(on) to minimize conduction losses, low capacitance to reduce driver losses, and an optimized gate charge to minimize switching losses. It is packaged in a compact SO-8 FL package, making it suitable for space-constrained designs. The component can handle a maximum drain-to-source voltage (VDSS) of 30 V and a continuous drain current (ID) of up to 46 A at 25°C. It is ideal for applications such as CPU power delivery and DC-DC converters. The NTMFS4C029N is Pb-free, halogen-free/BFR-free, and RoHS compliant, ensuring it meets modern environmental and safety standards.