SLC NAND Flash Parallel/Serial 3.3V 256G-bit 32G x 8 100-Pin LBGA FLASH - NAND (SLC) Memory IC 256Gbit Parallel 100 MHz 100-LBGA (12x18) The MT29F256G08AUCABH3-10ITZ:A is a high-density 256Gb Single-Level Cell (SLC) NAND Flash memory device from Micron Technology. It provides non-volatile data storage with high reliability, fast read/write performance, and long endurance, making it suitable for industrial, networking, embedded computing, automotive, and data-logging applications. The device supports both asynchronous and synchronous interfaces and complies with the Open NAND Flash Interface (ONFI) standard for enhanced interoperability and performance. It is housed in a compact 100-ball LBGA package (12 mm × 18 mm). • Open NAND Flash Interface (ONFI) 2.2-compliant1 • Single-level cell (SLC) technology • Organization – Page size x8: 8640 bytes (8192 + 448 bytes) – Block size: 128 pages (1024K + 56K bytes) – Plane size: 2 planes x 2048 blocks per plane – Device size: 32Gb: 4096 blocks; 64Gb: 8192 blocks; 128Gb: 16,384 blocks; 256Gb: 32,768 blocks • Synchronous I/O performance – Up to synchronous timing mode 5 – Clock rate: 10ns (DDR) – Read/write throughput per pin: 200 MT/s • Asynchronous I/O performance – Up to asynchronous timing mode 5 – tRC/tWC: 20ns (MIN) – Read/write throughput per pin: 50 MT/s • Array performance – Read page: 35µs (MAX) – Program page: 350µs (TYP) – Erase block: 1.5ms (TYP) • Operating Voltage Range – VCC: 2.7–3.6V – VCCQ: 1.7–1.95V, 2.7–3.6V • Command set: ONFI NAND Flash Protocol • Advanced Command Set – Program cache – Read cache sequential – Read cache random – One-time programmable (OTP) mode – Multi-plane commands – Multi-LUN operations – Read unique ID – Copyback • First block (block address 00h) is valid when shipped from factory. For minimum required ECC, see Error Management (page 114). • RESET (FFh) required as first command after power-on • Operation status byte provides software method for detecting – Operation completion – Pass/fail condition – Write-protect status • Data strobe (DQS) signals provide a hardware method for synchronizing data DQ in the synchronous interface • Copyback operations supported within the plane from which data is read • Quality and reliability – Data retention: JESD47G compliant; see qualification report – Endurance: 60,000 PROGRAM/ERASE cycles • Operating temperature: – Commercial: 0°C to +70°C – Industrial (IT): –40ºC to +85ºC • Package – 52-pad LGA – 48-pin TSOP – 100-ball BGA – 132-ball BGA #Micron #NANDFlash #SLCNAND #FlashMemory #NonVolatileMemory #ONFI #EmbeddedSystems #IndustrialElectronics #DataStorage #MemoryIC #LBGA100 #HighReliability #MT29F256G08AUCABH310ITZA #MicronMemory #ParallelNANDFlash

External Flash Module #Module The External Flash Module is a compact, high-performance circuit designed around a 128Mbit NOR flash memory, ensuring fast and reliable data storage for modern embedded systems. Integrated with precision passive components and optimized connectivity, this module offers efficient power management and seamless integration for diverse applications in IoT, industrial automation, and consumer electronics. #ExternalFlashModule #NORFlash #EmbeddedSystems #IoT #DataStorage #ElectronicsDesign