Input Stage MOSFET Bank and 3.3 V Rail Notes
Schematic update
The upstream LM5069 hot-swap pass element uses a six-device parallel bank:
Q_HS1–Q_HS6: BSC0702LS, 60 V N-channel MOSFET.
- All drains connected to
HOTSWAP_SENSE_NODE.
- All sources connected to
BUS_12V.
- LM5069 gate drive now goes through individual gate resistors:
R_HS_G1–R_HS_G6 = 10 Ω
- Common drive:
HOTSWAP_GATE
- Individual gate nets:
HOTSWAP_GATE_Q1–HOTSWAP_GATE_Q6
3.3 V logic rail support added:
C_3V3_BULK = 10 µF from 3V3 to GND.
C_3V3_100N = 100 nF from 3V3 to GND.
- Pico
ADC_VREF tied to 3V3 as a first-pass default.
BSC0702LS datasheet facts
From the BSC0702LS datasheet:
VDS = 60 V
RDS(on), max = 2.7 mΩ at VGS = 10 V, ID = 50 A
ID = 100 A at TC = 25°C
ID = 84 A at TC = 100°C
ID ≈ 23 A under the datasheet’s normal PCB thermal assumption (RθJA = 50 K/W)
RθJC typical 0.9 K/W, max 1.5 K/W
- SOA curves are provided, but must be checked against actual startup/fault pulse timing.
Conduction-loss estimate at 150 A
Assuming six MOSFETs share current equally:
- Total current:
150 A
- Current per FET:
25 A
- Cold max
RDS(on): 2.7 mΩ
Per-FET conduction loss:
P_FET = I² × R = 25² × 0.0027 ≈ 1.69 W
Total MOSFET bank conduction loss:
P_TOTAL = 6 × 1.69 W ≈ 10.1 W
Hot RDS(on) will be higher. If using an approximate 1.5× hot resistance multiplier:
- Per FET:
~2.5 W
- Total bank:
~15 W
This is plausible only with serious copper, thermal spreading, and airflow. It is not layout-validated yet.
Kelvin shunt selection
Selected real shunt family/part:
R_HS_SHUNT: Bourns CSS4J-4026R-L300F
- Four-terminal Kelvin current-sense resistor
R = 0.3 mΩ ±1%
Power rating = 10 W @ 70°C terminal temperature
- Same CSS4J-4026 datasheet family as the Flux-library 0.5 mΩ part.
LM5069 thresholds with 0.3 mΩ:
- Current-limit threshold:
55 mV / 0.3 mΩ ≈ 183 A nominal
- Min-current-limit estimate:
48.5 mV / 0.3 mΩ ≈ 162 A
- Circuit-breaker threshold:
105 mV / 0.3 mΩ ≈ 350 A nominal
- Shunt dissipation at 150 A:
150² × 0.0003 ≈ 6.75 W
This gives a hardware ceiling above 150 A while keeping shunt dissipation under the 10 W rating, assuming the PCB layout keeps terminal temperature within the datasheet derating curve.
LM5069 first-pass values
UVLO
Current first-pass divider:
R_HS_UV_TOP = 32.4 kΩ
R_HS_UV_BOT = 10 kΩ
Approximate falling threshold:
VUV_FALL ≈ 2.5 × (32.4k + 10k) / 10k ≈ 10.6 V
Approximate hysteresis from LM5069 UVLO hysteresis current:
VHYS ≈ 21 µA × 32.4 kΩ ≈ 0.68 V
Approximate rising threshold:
VUV_RISE ≈ 11.3 V
This is intended to keep the 12 V bus off during severe droop while allowing normal server PSU startup.
Power limit
Current first-pass value:
Using the LM5069 datasheet equation, with RSNS = 0.3 mΩ and about 14 V worst-case VDS, this targets roughly 250 W total MOSFET-bank power limit.
Approximate power per MOSFET during power limit if sharing evenly:
250 W / 6 ≈ 42 W/FET
This still requires SOA validation against the BSC0702LS SOA curve for the selected timer and bus capacitance.
Timer
Current first-pass value:
LM5069 fault timeout estimate:
tFAULT ≈ C × 4 V / 85 µA ≈ 470 nF × 4 / 85 µA ≈ 22 ms
This is long enough for moderate bus capacitance startup but increases stress during start-into-short. It must be validated with actual downstream capacitance and FET SOA.
SOA concerns
The biggest risk is not steady-state conduction loss; it is linear-mode stress during hot-swap events:
- Charging downstream bulk capacitance: during inrush, the MOSFETs can sit in the linear region while
BUS_12V rises.
- Start into short: the MOSFET bank may see nearly full input voltage while current/power limiting is active.
- Hot short while running: LM5069 must pull the gate down quickly enough and the FETs must survive until protection trips.
- Current sharing during linear operation: paralleled MOSFETs do not necessarily share equally during transient/linear events.
- Gate stability: individual gate resistors are now added, but values should be validated on hardware.
Remaining input-stage blockers
- Verify Bourns CSS4J-4026R-L300F sourcing/assembly availability for the intended manufacturer path.
- Validate shunt terminal temperature at 150 A continuous.
- Validate six-FET SOA for startup, start-into-short, and hot-short cases using actual bus capacitance.
- Confirm
R_HS_PWR = 7.68 kΩ and C_HS_TIMER = 470 nF with SOA calculations and/or simulation.
- Perform layout-level thermal/current-density analysis before ordering.
- Add final HPSU connector pinout and PMBus/PSU enable details.
3.3 V rail status
The Pico is powered from the existing 5V_LOGIC rail via VSYS/VBUS, and its 3V3 rail powers local logic such as buffers, INA181 supplies, pull-ups, and status circuitry. Basic decoupling has been added, but the 5V_LOGIC buck remains a placeholder and still needs a final regulator implementation.