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NTMFS4C03NT1G

NTMFS4C03NT1G thumbnail
The NTMFS4C03N, manufactured by ON Semiconductor, is a high-performance, single N-Channel MOSFET designed for power applications. Encased in a compact SO-8FL package, this component offers a maximum drain-to-source voltage (VDSS) of 30V and a continuous drain current (ID) of up to 136A at 25°C. With an exceptionally low RDS(on) of 2.1 mΩ at VGS of 10V, it minimizes conduction losses, making it ideal for high-efficiency power management. Additionally, the MOSFET features low gate charge (QG) and capacitance, reducing driver losses and enhancing overall system efficiency. The device is Pb-Free, Halogen Free/BFR Free, and RoHS compliant, ensuring adherence to environmental standards. It also boasts a robust thermal performance with a junction-to-case thermal resistance (RθJC) of 1.95°C/W, making it suitable for applications requiring efficient heat dissipation. The NTMFS4C03N is available in tape and reel packaging options, accommodating various manufacturing needs.

Properties

4.9

nC

352

A

4.7

nC

40

°C/W

1.95

°C/W

20

V

64

W

67

pF

136

S

2

Ω

1.3

V

39

nC

30

V

2.2

V

136

A

150

°C

-55

°C

1.00

mm

1.95

°C/W

3071

pF

1.75

V

0.75

V

/Users/jbreid/Desktop/Jonny5_Test_Set/NFET/NTMFS4C03NT1G.pdf

Q

1673

pF

8.5

nC

ON Semiconductor

NTMFS4C03NT1G

SO-8FL

FET

Pricing & Availability

Distributor

Qty 1

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