# IMZC120R040M2HXKSA1 (Component) ## Description CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 34 A at TC = 100°C • RDS(on) = 40 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 µs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasitic turn on, 0 V turn-off gate voltage can be applied • Robust body diode for hard commutation • .XT interconnection technology for best-in-class thermal performance • Suitable Infineon gate drivers can be found under https://www.infineon.com/gdfinder Potential applications • General purpose drives (GPD) • EV Charging • Online UPS/Industrial UPS • Solar power optimizer • String inverter • Energy Storage Systems (ESS) • Welding #CommonPartsLibrary #Transistor #FET #Mosfet #CoolSiC™ G2 IMZC120R040M2H ## Component Details - **Owner:** adrian95 - **Created:** 4/14/2026 - **Last Updated:** 4/15/2026 - **Visibility:** Public - **License:** https://creativecommons.org/licenses/by/4.0/ - **Manufacturer Name:** Infineon - **Mount:** Through Hole - **Part Type:** Transistor - **Manufacturer Part Number:** IMZC120R040M2HXKSA1 - **Datasheet URL:** https://mm.digikey.com/Volume0/opasdata/d220001/medias/docus/6465/IMZC120R040M2HXKSA1.pdf - **Used in:** 21 projects - **Part Type:** Transistors - **Sub-Type:** MOSFET - **Manufacturer:** Infineon - **MPN:** IMZC120R040M2HXKSA1 - **Mount Type:** Through Hole - **Package / Case Code:** TO - **Pin Count:** 4 ## Pins | Pin | Name | Type | |-----|------|------| | 1 | DRAIN | | | 2 | SOURCE | | | 3 | KELVIN_SENSE_CONTACT | | | 4 | GATE | | --- *Generated from [https://www.flux.ai/adrian95/imzc120r040m2hxksa1~75q](https://www.flux.ai/adrian95/imzc120r040m2hxksa1~75q)*