# EPC2019 (Component) ## Description GANFET N-CH 200V 8.5A DIE The EPC2019 is an enhancement-mode N-channel Gallium Nitride (eGaN®) power transistor designed for high-speed and high-efficiency power conversion applications. With a 200 V drain-to-source voltage rating, 42 mΩ maximum RDS(on), and 8.5 A continuous drain current, it offers significantly lower switching losses than conventional silicon MOSFETs. Its ultra-low gate charge, zero reverse recovery charge (QRR), and fast switching characteristics make it ideal for high-frequency switching circuits. The device is supplied in a bare die (passivated die with solder bars) package for optimized thermal and electrical performance in compact, high-density designs. Key Features Enhancement-mode N-channel eGaN® FET 200 V drain-to-source voltage (VDS) 42 mΩ maximum RDS(on) @ VGS = 5 V 8.5 A continuous drain current Ultra-low gate charge (Qg ≈ 2.9 nC) Zero reverse recovery charge (QRR) for reduced switching losses Supports high-frequency switching operation Gate drive compatible with 0 V OFF / 5 V ON (no negative gate voltage required) Bare die package for compact, high-performance power designs Operating junction temperature: −40°C to +150°C #EPC2019 #eGaN #GaNFET #PowerTransistor #NChannelFET #HighEfficiency #HighSpeedSwitching #PowerElectronics #DCDCConverter #ClassDAudio #EfficientPowerConversion ## Component Details - **Owner:** adrian95 - **Created:** 6/27/2026 - **Last Updated:** 6/27/2026 - **Visibility:** Public - **License:** https://creativecommons.org/licenses/by/4.0/ - **Datasheet URL:** https://storage.googleapis.com/graviton-electric-symbols/document_assets/user-uploaded/aee272d01241be113cb95a12a48aea4d9bdc0629447655329ffccd9ce00c4b8c.pdf - **Part Type:** Transistor - **Manufacturer Name:** EPC Efficient Power Conversion - **Manufacturer Part Number:** EPC2019 - **Symbol Style:** parametric-v1 - **Used in:** 6 projects ## Distributor Pricing (qty 1) *Pricing shown for quantity 1. For price breaks and other quantities, open in Flux.* | Distributor | Unit Price (qty 1) | Stock | |------------|--------------------|-------| | [LCSC](https://lcsc.com/product-detail/gan-transistors-gan-hemt_epc-epc2019_C2836675.html) | $5.9149 | 0 | - **Part Type:** Transistors - **Sub-Type:** MOSFET - **MPN:** EPC2019 - **Mount Type:** Reverse - **Package / Case Code:** TO - **Pin Count:** 7 ## Pins | Pin | Name | Type | |-----|------|------| | 1 | G | | | 2 | S_1 | | | 3 | D_1 | | | 4 | S_2 | | | 5 | D_2 | | | 6 | S_3 | | | 7 | SUBSTRATE | | --- *Generated from [https://www.flux.ai/adrian95/epc2019](https://www.flux.ai/adrian95/epc2019)*