# RBN25H125S1FPQ (Component) ## Description • Trench gate and thin wafer technology IGBT - 1250 V 25 A 223W • Built in fast recovery diode in one package • Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C) #Transistor #IGBT ## Component Details - **Owner:** abbys - **Created:** 7/1/2024 - **Last Updated:** 7/1/2024 - **Visibility:** Public - **Datasheet URL:** https://www.renesas.com/us/en/document/dst/rbn25h125s1fpq-a0-datasheet-0?r=515401 - **Manufacturer Part Number:** RBN25H125S1FPQ - **Manufacturer Name:** Renesas - **Part Type:** Transistor - **Used in:** 4 projects - **Part Type:** Transistors - **Sub-Type:** IGBT - **Manufacturer:** Renesas - **MPN:** RBN25H125S1FPQ - **Package / Case Code:** TO - **Pin Count:** 3 ## Pins | Pin | Name | Type | |-----|------|------| | 1 | G | | | 2 | C | | | 3 | E | | --- *Generated from [https://www.flux.ai/abbys/rbn25h125s1fpq~oz](https://www.flux.ai/abbys/rbn25h125s1fpq~oz)*